Silicon Systems

When Ge monolayers are placed on Si, strain is induced due to the crystal lattice mismatch between the two materials. The strain is released by means of surface reconstruction and roughening. Studying the morphological changes to the surface with Scanning Tunneling Microscopy (STM) and Low-Energy Electron Microscopy (LEEM) provides a better understanding of hetero-epitaxial growth of Ge on Si. Ultimately, we will have more control over how to grow certain desired structures.