STM Image Archive

Ge on Si(001)

1. Reversal of step roughness

(a)

(b)

(c)

(d)

(e)

1. Si(001). There are two types of steps: straight low-energy S_A and rough higher-energy S_B steps.
2. 0.8 mL of Ge. Steps become equally rough as a result of changing step energies and (2xn) reconstruction.
3. Magnification of (b) showing (2xn) reconstructing. Dark lines are dimer vacancy lines.
4. 1.6 mL of Ge. A reversal of step roughness compared to (a) due to further change of step energies.
5. Magnification of (d).

2. Reversal of surface anisotrophy

(a)

(b)

(c)

(d)

1. Clean Si(001) under external uniaxial stress. (2x1) domains expands at the expense of (1x2) domains.
2. Magnifications of (A), showing steps and terrace type.
3. 1.6 mL of Ge on Si(001) under external uniaxial stress. (1x2) domains expands at the expense of (2x1) domains, demonstrating a reversal of stress anisotrophy, as compared to (a).
4. Magnification of (c).

3. 3D islanding

Beyond 3 mL Ge deposition. 3D [105] faceted hut clusters begin to form.

(a)

(b)

(c)

1. 0.01 ML of Ge on Si(100): Ge adatom-induced chain-like structure
2. 3D image of (a)
3. Modification of Si(100) substrate bonding in the vicinity of a Ge ad-dimer island

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