"Multiphonon Scattering of Low-Energy Electrons", R. F. Barnes, M. G. Lagally, and M. B. Webb, Phys. Rev. 171, 627 (1968).

"Experimental Determination of the Effective Atomic Scattering Factor and Rigid-Lattice Interference Function in Low-Energy Electron Diffraction", M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 21, 1388 (1968).

"Low-Energy Electron Diffraction from Ag(111): Intensity-versus-Energy Curves and Absolute Intensity of the (00) Beam", M. G. Lagally, Z. Naturforsch. 25a, 1567 (1970).

"Consequences of the Reciprocity Theorem in Low-Energy Electron Diffraction", M. G. Lagally, T. C. Ngoc, and M. B. Webb, Surface Sci. 25, 444 (1971).

"Kinematic Low-Energy Electron Diffraction Intensities from Averaged Data: A Method for Surface Crystallography", M. G. Lagally, T. C. Ngoc, and M. B. Webb, Phys. Rev. Letters 26, 1557 (1971).

"Averaged Low-Energy Electron Diffraction Intensities from Ni(111)", M. G. Lagally, T. C. Ngoc, and M. B. Webb, J. Vac. Sci. and Technol. 9, 645 (1972).

"A Method to Obtain Kinematic Intensities from Low-Energy Electron Diffraction Data", T. C. Ngoc, M. G. Lagally, and M. B. Webb, Surface Sci. 35, 117 (1973).

"Elastic Scattering of Low-Energy Electrons from Surfaces", M. B. Webb, and M. G. Lagally, Solid State Physics 28, 301 (1973).

"Fourier Inversion of LEED Data", J. C. Buchholz, M. G. Lagally, and M. B. Webb, Surface Sci. 41, 248 (1974).

"LEED Intensity-Averaging Experiments for Surface-Layer Structure Determination", M. G. Lagally, J. C. Buchholz, and G. C. Wang, J. Vac. Sci. Technol. 12, 213 (1975).

"Surface Crystallography of W(110) and W(110)p(2x1)-0: The Position of W Atoms", J. C. Buchholz, G. C. Wang, and M. G. Lagally, Surface Sci. 49, 508 (1975).

"Order-Disorder Transition and Adatom-Adatom Interactions in a Chemisorbed Overlayer: Oxygen on W(110)", J. C. Buchholz, and M. G. Lagally, Phys. Rev. Letters 35, 442 (1975).

"Auger Investigations of Boron-Doped SiO2/Si", G. Moore, H. Guckel, and M. G. Lagally, J. Vac. Sci. Technol. 14, 70 (1977).

"Transition Density of States for Si(100) from L1L23V and L23VV Auger Spectra", J. E. Houston, G. Moore, and M. G. Lagally, Solid State Communications 21, 879 (1977).

"On the Adequacy of the Draw-Sealing of Gas-Filled Glass Ampoules", A. P. MacKenzie, D. G. Welkie, M. G. Lagally, M. Pace, and F. I. Elliott, Develop. Biol. Standard 36, 151 (1977).

"Island-Dissolution Phase Transition in a Chemisorbed Layer", T. M. Lu, G. C. Wang, and M. G. Lagally, Phys. Rev. Letters 39, 411 (1977).

"Electromechanical Devices Utilizing Thin Si Diaphragms", H. Guckel, S. Larsen, M. G. Lagally, G. Moore, J. B. Miller, and J. D. Wiley, Appl. Phys. Letters 31, 618 (1977).

"Braze Alloy Spreading on Steel", T. A. Siewert, R. W. Heine, and M. G. Lagally, Welding Journal 57, 31 (1978).

"Monte-Carlo Modeling of Phase Changes in the Chemisorption System O/W (110)", W. Y. Ching, D. L. Huber, M. Fishkis, and M. G. Lagally, J. Vac. Sci. Technol. 15, 653 (1978).

"Phase Transitions in the Chemisorbed Layer W(110)p(2x1)-0, I. Experimental", G. C. Wang, T. M. Lu, and M. G. Lagally, J. Chem. Phys. 69, 479 (1978).

"Chemisorption: Island Formation and Adatom Interactions", M. G. Lagally, G. C. Wang, and T. M. Lu, CRC Critical Reviews in Solid 7, 233 (1978).

"Auger Line Shapes for Ga and As CCV Transitions in GaAs (110)", G. D. Davis, and M. G. Lagally, J. Vac. Sci. Techn. 15, 1311 (1978).

"Order-Disorder Transformations in Chemisorbed Layers: O on W(110)", W. Y. Ching, D. L. Huber, M. G. Lagally, and G. C. Wang, Surface Science 77, 550 (1978).

"Quantitative Island Size Determination in the Chemisorbed Overlayer O/W (110). I: Instrument Response Function and Substrate Perfection", G. C. Wang, and M. G. Lagally, Surface Science 81, 69 (1979).

"Correlation of Short-Range Order with Sputter Dose in GaAs (110) Using a Vidicon-Based LEED System", D. G. Welkie, and M. G. Lagally, J. Vac. Sci. Technol. 16, 784 (1979).

"Calculated and Measured Auger Lineshapes in SiO2", D. E. Ramaker, J. S. Murday, N. H. Turner, G. Moore, M. G. Lagally, and J. E. Houston, Phys. Rev. B19, 5375 (1979).

"Investigation of the Instrument Response of a Vidicon-Based LEED System", D. G. Welkie, and M. G. Lagally, Applications of Surface Sci. 3, 272 (1979).

"Island Formation and Condensation of a Chemisorbed Overlayer", T. M. Lu, G. C. Wang, and M. G. Lagally, Surface Sci. 92, 133 (1980).

"LEED Study of the Surface Defect Structure of Ag (111) Epitaxially Grown on Mica", D. G. Welkie, M. G. Lagally, and R. L. Palmer, J. Vac. Sci. Techn. 17, 453 (1980).

"Surface Defects and Thermodynamics of Chemisorbed Layers", M. G. Lagally, T. M. Lu, and D. G. Welkie, J. Vac. Sci. Techn. 17, 223 (1980).

"Quantitative Analysis of Step Densities Using a Two-Dimensional Random Probability Model", T. M. Lu, S. R. Anderson, M. G. Lagally, and G. C. Wang, J. Vac. Sci. Technol. 17, 207 (1980).

"Determination of Shallow Core Level Line Shapes in Selected Compound Semiconductors", G. D. Davis, P. E. Viljoen, and M. G. Lagally, J. Electron Spectroscopy and R 20, 305 (1980).

"The Resolving Power of a LEED Instrument and the Analysis of Surface Defects", T. M. Lu, and M. G. Lagally, Surface Sci. 98, 695 (1980).

"Analysis of the Composition of a Discolored Aluminum Film Vapor-Deposited onto Plastic", M. G. Lagally, S. R. Anderson, N. C. Tran, T. Hoang, and K. Gilleo, Thin Solid Films 72, 151 (1980).

"Comparison of Site-Specific Densities of States Determined from Auger Spectra and XPS-Determined Valence Band Spectra in GeS(001) and GeSe(001)", G. D. Davis, P. E. Viljoen, and M. G. Lagally, J. Electron Spectroscopy and R 21, 135 (1980).

"Defect Structures at Solid Surfaces", M. G. Lagally, and D. G. Welkie, Surface and Interface Analysis 3, 8 (1981).

"A Simple Technique for Measuring Electron Beam Angular Divergence", J. A. Martin, and M. G. Lagally, J. Vac. Sci. Technol. 18, 58 (1981).

"Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes", G. D. Davis, D. E. Savage, and M. G. Lagally, J. Electron Spectroscopy and R 23, 25 (1981).

"The Effect of Instrumental Broadening on LEED Intensity-Energy Profiles", T. M. Lu, M. G. Lagally, and G. C. Wang, Surface Sci. 104, 0 (1981).

"Electron Spectroscopy Analysis of Contact Surfaces in the Wear of Carbon Brushes Against Copper Commutators", D. E. Savage, M. G. Lagally, and M. E. Schrader, Appl. Surface Sci. 7, 142 (1981).

"LEED Beam Shapes and Fluctuation Phenomena Near an Order-Disorder Transition", T. M. Lu, L. H. Zhao, and M. G. Lagally, J. Vac. Sci. Technol. 18, 504 (1981).

"Correction for Loss Effects in Valence-Band XPS Spectra by Deconvolution", G. D. Davis, and M. G. Lagally, J. Vac. Sci. Technol. 18, 727 (1981).

"LEED Study of the Surface Defect Structure of Ge Grown Epitaxially on GaAs(110)", H. M. Clearfield, D. G. Welkie, and M. G. Lagally, J. Vac. Sci. Technol. 18, 802 (1981).

"Site-Specific Densities of States for Cleaved and Sputtered GaAs(110) from Auger Line Shapes", G. D. Davis, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. 18, 904 (1981).

"Quantitative Island Size Determination in the Chemisorbed Overlayer W(110)p(2x1)-0 II: Theoretical Calculations", T. M. Lu, G. C. Wang, and M. G. Lagally, Surface Sci. 107, 494 (1981).

"LEED Investigation of Extended Defects at the Surface of Ge Films Grown Epitaxially on GaAs(110), H. M. Clearfield, D. G. Welkie, T.M. Lu, and M. G. Lagally, J. Vac. Sci. Technol. 19, 323 (1981). 56,", P. E. Viljoen, G. D. Davis, and M. G. Lagally, S. Afr. J. Phys. 4, 44 (1981).

"Direct Determination of the Island Size Distribution for Parallelogram-Shaped Islands", L. H. Zhao, T. M. Lu, and M. G. Lagally, Appl. Surface Sci. 11/12, 634 (1982).

"The Present Status of Low-Energy Electron Diffraction", M. G. Lagally, Appl. Surface Sci. 13, 260 (1982).

"Diffraction from Surfaces with Randomly Distributed Steps", T. M. Lu, and M. G. Lagally, Surface Sci. 120, 47 (1982).

"Analysis of Surface Structural Defects by Low-Energy Electron Diffraction", D. G. Welkie, and M. G. Lagally, Thin Solid Films 93, 219 (1982).

"Thermodynamics of Overlayer Ordering and Epitaxy", M. G. Lagally, J. Vac. Sci. Technol. 20, 554 (1982).

"An Alternative Approach to the Quantitative Determination of Grain Size Distribution in X-Ray Diffraction", L. H. Zhao, T. M. Lu, and M. G. Lagally, Acta Cryst. A38, 800 (1982).

"Diffraction from Overlayer Islands with Positional Correlation", T. M. Lu, L. H. Zhao, M. G. Lagally, G. C. Wang, and J. E. Houston, Surface Sci. 122, 519 (1982).

"A High-Resolution Low-Energy Electron Diffractometer Based on a Field Emission Source", J. A. Martin, and M. G. Lagally, J. Vac. Sci. Technol. A1, 1210 (1983).

"Analysis of Surface Structural Defects Using LEED and RHEED", M. G. Lagally, Ultramicroscopy 11, 103 (1983).

"Instrumentation for Low-Energy Electron Diffraction", M. G. Lagally, and J. A. Martin, Rev. Sci. Instrum. 54, 1273 (1983).

"Dynamics of Two-Dimensional Ordering of An Overlayer with Four-Fold Degenerate Ground State: W(110)p(2x1)-0", P. K. Wu, J. H. Perepezko, J. T. McKinney, and M. G. Lagally, Phys. Rev. Letters 51, 1577 (1983).

"Species-Specific Densities of States of Ga and As in the Chemisorption of H20 on GaAs(110),", W. A. Luo, and M. G. Lagally, J. Vac. Sci. Technol. A2, 593 (1984).

"Initial Ordering Kinetics of a Randomly Stepped GaAs(110) Surface", H. M. Clearfield, and M. G. Lagally, J. Vac. Sci. Technol. A2, 844 (1984).

"A Method for the Calculation of LEED Angular Profiles to Estimate Overlayer Spacings and Island Size Distributions", D. Saloner, and M. G. Lagally, J. Vac. Sci. Technol. A2, 935 (1984).

"Species-Specific Densities of States of Ga and As in the Chemisorption of Oxygen on GaAs(110)", K. D. Childs, and M. G. Lagally, Phys. Rev. B30, 5742 (1984).

"Species-Specific Densities of States of Ga and As in the Chemisorption of CO and C on GaAs(110)", K. D. Childs, and M. G. Lagally, J. Vac. Sci. Technol. A3, 1024 (1985).

"Resistivity-Process Relationships in TiSi2 Formed from Ti-Si Reaction Couples", J. Jacobs, C. Pico, M. Phipps, N. C. Tran, and M. G. Lagally, J. Vac. Sci. Technol. A3, 723 (1985).

"Two-Dimensional Overlayer Growth: Island Size and Island Separation Distributions", D. Saloner, P. K. Wu, and M. G. Lagally, J. Vac. Sci. Technol. A3, 1531 (1985).

"Analysis of Domain-Size Distributions in Epitaxial Growth Using LEED Angular Profiles", D. Saloner, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. 41, 179 (1985).

"Crystallography of In on GaAs(110): Possible Relationship of Laterally Inhomogeneous Structure to Fermi Level Pinning", D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 55, 959 (1985).

"Reliability of Low-Energy Electron Diffraction for Studies of Critical Phenomena at Surfaces", W. Moritz, and M. G. Lagally, Phys. Rev. Letters 56, 865 (1986).

"Ordering Kinetics for O on W(110)", M. Tringides, P. K. Wu, W. Moritz, and M. G. Lagally, Ber. Bunsenges. Phys. Chem. 90, 277 (1986).

"Structure, Stability, and Origin of (2xn) Phases on Si(100)", J. A. Martin, D. E. Savage, W. Moritz, and M. G. Lagally, Phys. Rev. Letters 56, 1936 (1986).

"Influence of Process Parameter Variation on the Reflectivity of Sputter-Deposited W-C Multilayer Diffraction Gratings", B. Sager, P. Benson, K. Jahoda, J. R. Jacobs, J. J. Bloch, W. J. Sanders, and M. G. Lagally, J. Vac. Sci. Technol. A4, 647 (1986).

"RHEED Study of the Growth of In on GaAs(110) at Different Temperatures", D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. B4, 943 (1986).

"Compositional and Morphological Analysis of Silver Chloride Films Deposited by Evaporation and RF Sputtering", A. Belkind, M. Dror, E. Ezell, W. A. Luo, J. R. Jacobs, and M. G. Lagally, Thin Solid Films 162, 113 (1986).

"Determination of Terrace Size and Edge Roughness in Vicinal Si(100) Surfaces by Surface Sensitive Diffraction", D. Saloner, J. A. Martin, M. C. Tringides, D. E. Savage, C. E. Aumann, and M. G. Lagally, J. Appl. Phys. 61, 2884 (1987).

"Direct Observation of Amorphous-to-Crystalline Transition in the Growth of Sb on GaAs(110) by RHEED", D. E. Savage, and M. G. Lagally, Appl. Phys. Letters 50, 1719 (1987).

"Scaling in the Growth Kinetics of a Chemisorbed Overlayer: W(110)p(2x1)-0", M. C. Tringides, P. K. Wu, and M. G. Lagally, Phys. Rev. Letters 59, 315 (1987).

"Atomic Steps on Si(100) Surfaces", J. A. Martin, C. E. Aumann, D. E. Savage, M. C. Tringides, M. G. Lagally, W. Moritz, and F. Kretschmar, J. Vac. Sci. Technol. A5, 615 (1987).

"The Use of Peak Intensity in Diffraction Measurements of Growth Kinetics on Surfaces", M. C. Tringides, and M. G. Lagally, Surface Sci. 195, 0 (1988).

"Quantitative RHEED Measurements of Surface Roughness on GaAs(100)", E. J. Heller, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. A6, 1484 (1988).

"Step Structure and Dimer Row Correlations in Vicinal Si(100)", C. E. Aumann, D. E. Savage, R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. A6, 1963 (1988).

"A Beam Line for Layered Synthetic Microstructure Studies", J. Boudry, C. Riedel, B. Edwards, M. G. Lagally, R. Redaelli, F. Cerrina, C. Falco, R. Fernandez, J. H. Underwood, and M. Hettrick, Nuclear Instrum. and Methods A266, 351 (1988).

"Three-Bond Scission and Structure of the Cleaved Si(111) Surface", D. Haneman, and M. G. Lagally, J. Vac. Sci. Technol. B 6, 1451 (1988).

"Direct Determination of the Size Distribution of Uncorrelated Overlayer Islands from Diffraction Profiles", R. Kariotis, D. E. Savage, and M. G. Lagally, Surface Sci. 204, 491 (1988).

"Kinetics of Titanium Silicide Formation on Single-Crystal Si: Experiment and Modeling", C. A. Pico, and M. G. Lagally, J. Appl. Phys. 64, 4957 (1988).

"Direct Determination of the Size Distribution of Arbitrary Surface Configurations from Diffraction Measurements. I. Theory", R. Kariotis, D. W. Kruger, D. E. Savage, and M. G. Lagally, Surface Sci. 205, 591 (1988).

"A Monochromator Based on W/C Multilayers of 40� Layer Spacing", A. Smith, C. Riedel, B. Edwards, D. E. Savage, B. Lai, A. Ray-Chaudhuri, F. Cerrina, M. G. Lagally, J. H. Underwood, and C. Falco, SPIE Proceedings 983, 185 (1998).(Thin-Film Neutron Optical Devi)

"Ordering Kinetics of a Chemisorbed Overlayer: 0/W(110)", P. K. Wu, M. C. Tringides, and M. G. Lagally, Phys. Rev. B39, 7595 (1989).

"Application of Rate Equation Modeling to Molecular Beam Epitaxy", R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. B7, 269 (1989).

"Rate Equation Modeling of Interface Width", R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. A7, 2180 (1989).

"Diffusive Disordering Kinetics in One Dimension", M. C. Tringides, J. Luscombe, and M. G. Lagally, Phys. Rev. B39, 9377 (1989).

"Rate Equation Modeling of Epitaxial Growth", R. Kariotis, and M. G. Lagally, Surface Sci. 216, 557 (1989).

"Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Si Surfaces", B. S. Swartzentruber, Y. W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A7, 2901 (1989).

"A Simple Monochromator Based on X-ray Multilayer Mirrors", A. Smith, C. Riedel, B. Edwards, D. E. Savage, B. Lai, A. Ray Chauduri, F. Cerrina, M. G. Lagally, J. H. Underwood, and C. M. Falco, Rev. Sci. Instrum. 60, 2003 (1989).

"Ordering Kinetics at Surfaces", M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y. W. Mo, Ultramicroscopy 31, 87 (1989).

"Anisotropic Growth and Layer-by-Layer Epitaxy", M. G. Lagally, R. Kariotis, D. E. Savage, and Y. W. Mo, Surface Sci. 219, 0 (1989).

"Determination of the Size Distribution of Noncrystalline Regions on Crystalline Substrates", D. W. Kruger, D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 63, 402 (1989).

"Influence of Beam Coherence on Measurements of Roughness in Film Growth", R. Kariotis, and M. G. Lagally, Appl. Phys. Letters 55, 960 (1989).

"Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)", Y. W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 63, 2393 (1989).

"Measurement of Conversion Temperatures for Si(111) 2x1", D. Haneman, J. J. Rownd, and M. G. Lagally, Surface Sci. 224, 0 (1989).

"Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)", Y. W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A8, 201 (1990).

"Observations of Strain Effects on the Si(001) Surface Using Scanning Tunneling Microscopy", B. S. Swartzentruber, Y. W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A8, 210 (1990).

"Model Diffraction Profiles Parallel to Rough Step Edges", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, J. Appl. Phys. 67, 2848 (1990).

"Growth of Si on Flat and Vicinal Si(001) Surfaces: A Scanning Tunneling Microscopy Study", Y. W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. B8, 232 (1990).

"The Effect of External Stress on Si Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, and M. G. Lagally, J. Vac. Sci. Technol. A8, 2658 (1990).

"Maximum-Entropy Calculation of the Island Size Distribution for a Simple Diffraction Profile", R. Kariotis, and M. G. Lagally, J. Appl. Phys. 68, 21 (1990).

"Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y. W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Letters 65, 1020 (1990).

"RHEED Study of the Kinetics of the (2x1)-to-(7x7) Transformation in Cleaved Si(111)", B. Garni, D. E. Savage, and M. G. Lagally, Surface Sci. 235, 0 (1990).

"Direct Determination of Step and Kink Energies on Vicinal Si(001)", B. S. Swartzentruber, Y. W. Mo, R. Kariotis, M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 65, 1913 (1990).

"Characterization of Hollow Cathode DC Discharge Growth of Diamond: Rotational Vibronic Emission in a CH4-H2 Discharge", H. N. Chu, A. R. Lefkow, E. A. den Hartog, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, MRS Proceedings 162, 163 (1990).

"The Measurement of Gas Kinetic Temperature in a CH4-H2 Discharge", H. N. Chu, T. R. Lefkow, E. A. den Hartog, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, New Diamond Science and Techno , 233 (1990).

"Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y. W. Mo, and M. G. Lagally, Modern Physics Letters B4, 1379 (1990).

"Determination of Roughness Correlations in Multilayer Films for X-ray Mirrors", D. E. Savage, J. Kleiner, N. Schimke, Y. H. Phang, T. Jankowski, J. Jacobs, R. Kariotis, and M. G. Lagally, J. Appl. Phys. 69, 1411 (1991).

"Domain Boundary Control of Edge Roughness in Vicinal Si(001)", B. S. Swartzentruber, Y. W. Mo, and M. G. Lagally, Appl. Phys. Lett. 58, 822 (1991).

"Modeling Two-Dimensional Diffraction Profiles for Disordered Vicinal Surfaces and Random Island Configurations", J. Kleiner, C. E. Aumann, Y. W. Mo, R. Kariotis, and M. G. Lagally, Surface Sci. 240, 293 (1991).

"Surface Step Configurations Under Strain: Kinetics and Step-Step Interactions", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, Surface Sci. 242, 23 (1991).

"Activation Energy for Surface Diffusion of Si on Si(001): A Scanning Tunneling Microscopy Study", Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 66, 1998 (1991).

"Anisotropy in Surface Migration of Si and Ge on Si(111)", Y. W. Mo, and M. G. Lagally, Surface Sci. 248, 313 (1991).

"Scanning Tunneling Microscopy Study of the Growth Process of Ge on Si(001)", Y. W. Mo, and M. G. Lagally, J. Cryst. Growth 111, 876 (1991).

"Calculation of Terrace Edge Structure Distributions for Vicinal Surfaces", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, Surface Sci. 248, 295 (1991).

"Diffraction Determination of the Structure of Metastable 3D Clusters of Ge on Si(001)", C. E. Aumann, Y. W. Mo, and M. G. Lagally, Appl. Phys. Letters 59, 1061 (1991).

"Measurement of Gas Kinetic Temperature in a CH4-H2 Discharge During the Growth of Diamond", H. N. Chu, E. A. den Hartog, A. R. Lefkow, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, Phys. Rev. A44, 3796 (1991).

"Evolution of Vicinal Si(001) from Double to Single-Atomic-Height Steps with Temperature", J. J. de Miguel, C. E. Aumann, R. Kariotis, and M. G. Lagally, Phys. Rev. Letters 67, 2830 (1991).

"Roughness Evolution in Films and Multilayer Structures", M. G. Lagally, Physics of X-ray Multilayer St 7, 78 (1992).

"Surface Self-Diffusion of Si on Si(001)", Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Surface Sci. 268, 275 (1992).

"Interfacial Roughness Correlation in Multilayer Films: Influence of Total Film and Individual-Layer Thicknesses", D. E. Savage, N. Schimke, Y. H. Phang, and M. G. Lagally, J. Appl. Phys. 71, 1 (1992).

"In-Situ Scanning Tunneling Microscopy Study of the Growth Front Morphology of GaAs(001) Grown by Molecular Beam Epitaxy", E. J. Heller, and M. G. Lagally, Appl. Phys. Letters 60, 2675 (1992).

"X-ray Diffraction Determination of Interfacial Roughness Correlations in SixGe1-x/Si and GaAs/AlxGa1-xAs Superlattices", Y. H. Phang, D. E. Savage, T. F. Kuech, M. G. Lagally, J. S. Park, and K. L. Wang, Appl. Phys. Letters 60, 2986 (1992).

"Scanning Tunneling Microscopy Studies of the Initial Stages of Ge Growth on Si(001)", Y. W. Mo, and M. G. Lagally, Mat. Sci. and Engr. B14, 321 (1992).

"Response to Comment by Pimpinelli, Wolf, and Villain", Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 69, 986 (1992).

"Temperature Dependence of the Step Structure of Vicinal Si(001) Surfaces", C. E. Aumann, J. J. de Miguel, and M. G. Lagally, Surface Sci. 275, 1 (1992).

"Experimental Determination of the Strain Potentials on Vicinal Si(001) Surfaces", J. J. deMiguel, C. E. Aumann, S. Jaloviar, R. Kariotis, and M. G. Lagally, Phys. Rev. B46, 10257 (1992).

"Diffraction from Multilayer Structures with Partially Correlated Roughness", Y. H. Phang, R. Kariotis, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 72, 4627 (1992).

"The Temperature Dependence of Diamond Film Morphology", H. N. Chu, A. R. Lefkow, E. A. den Hartog, L. W. Anderson, M. G. Lagally, and J. E. Lawler, Plasma Sources Sci. Technol. 1, 187 (1992).

"An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin Films", M. G. Lagally, Jpn. J. Appl. Phys. 32, 1493 (1993).

"Scanning-Tunneling-Microscope Tip-Induced Migration of Vacancies on GaP(110)", P. Ebert, M. G. Lagally, and K. Urban, Phys. Rev. Letters 70, 1437 (1993).

"The Behavior of Steps on Si(001) as a Function of Vicinality", B. S. Swartzentruber, N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. B 47, 13432 (1993).

"X-Ray Diffraction Measurement of Partially Correlated Interfacial Roughness in Multilayers", Y. H. Phang, R. Kariotis, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 74, 3181 (1993).

"Variable-Temperature STM Measurements of Step Kinetics on Si(001)", N. Kitamura, B. S. Swartzentruber, M. G. Lagally, and M. B. Webb, Phys. Rev. Rapid Comm. B48, 5704 (1993).

"Step and Kink Energetics on GaAs(001)", E. J. Heller, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 71, 743 (1993).

"Real-Time Observations of Vacancy Diffusion on Si(001)-(2x1) by Scanning Tunneling Microscopy", N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 71, 2082 (1993).

"X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers", S. Nayak, J. M. Redwing, T. F. Kuech, Y. H. Phang, D. E. Savage, and M. G. Lagally, Mat. Res. Soc. Symp. Proceedin 312, 137 (1993).

"Determination of Interfacial Roughness Correlation in W/C Multilayer Films: Comparison Using Soft and Hard X-Ray Diffraction", Y. H. Phang, J. J. Rownd, J. F. MacKay, and M. G. Lagally, J. Appl. Phys. 74, 6158 (1993).

"Vacancy Diffusion on Si(001)-2x1", Z. Y. Zhang, H. Chen, B. C. Bolding, and M. G. Lagally, Phys. Rev. Letters 71, 3677 (1993).

"Roughening of Steps During Homoepitaxial Growth on Si(001)", F. Wu, S. G. Jaloviar, D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 71, 4190 (1993).

"Atomic-Scale Mechanisms for Surfactant Mediated Layer-by-Layer Growth in Homoepitaxy", Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 72, 693 (1994).

"Direct Observation of Charge-Dependent Relaxations of Anion Vacancies in III-P(110) Semiconductor Surfaces by STM", P. Ebert, K. Urban, and M. G. Lagally, Phys. Rev. Letters 72, 840 (1994).

"Film Stress of Sputtered W/C Multilayers and Strain Relaxation Upon Annealing", J. F. Geisz, T. F. Kuech, M. G. Lagally, F. Cardone, and R. M. Potenski, J. Appl. Phys. 75, 1530 (1994).

"Universal Size Relation in Long-Range-Ordered Structures", P. Zeppenfeld, M. Krysowski, C. Romainczyk, G. Comsa, and M. G. Lagally, Phys. Rev. Letters 72, 2737 (1994).

"Fabrication of Atomic-Scale Structures on Si(001) Surfaces", C. T. Salling, and M. G. Lagally, Science 265, 502 (1994).

"Vacancy-Vacancy Interaction on Ge-covered Si(001)", X. Chen, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 73, 850 (1994).

"Determining the Vertical Correlation of Interfacial Roughness in Multilayer Films Using X-ray Scattering", Y. H. Phang, D. E. Savage, Z. Y. Zhang, and M. G. Lagally, in Physics of X-Ray Multilayer St, ed. . , Optical Society of America, Wa (1994).

"Bonding Geometry Dependence of Fractal Growth on Metal Surfaces", Z. Y. Zhang, X. Chen, and M. G. Lagally, Phys. Rev. Letters 73, 1829 (1994).

"Correlated Interfacial Roughness Anisotropy in Si1-xGex/Si Superlattices", Y. H. Phang, C. Teichert, M. G. Lagally, L. Peticolas, J. C. Bean, and E. Kasper, Phys. Rev. B50, 435 (1994).

"The Influence of Controlled Impurity Incorporation on Surface and Interfacial Roughness in GaAs/AlxGa1-xAs Structures Grown by MOVPE", J. M. Redwing, S. Nayak, D. E. Savage, M. G. Lagally, and T. F. Kuech, J. Crystal Growth 145, 792 (1994).

"Response of Calcium Fluoride to 275-2550 eV Photons", R. E. Carrillo, D. W. Pearson, P. M. DeLuca, J. F. MacKay, and M. G. Lagally, Phys. Med. Biol. 39, 1875 (1994).

"Strain Relaxation and Oxide Formation on Annealed W/C Multilayers", J. F. Geisz, Y. H. Phang, T. F. Kuech, M. G. Lagally, F. Cardone, and R. M. Potenski, Mat. Res. Soc. Proceedings 318, 225 (1994).

"Influence of Impurities on Mechanisms of Growth in Metal Organic Vapor Phase Epitaxy GaAs(001) Studies by AFM", S. Nayak, J. M. Redwing, J. W. Huang, M. G. Lagally, and T. F. Kuech, MRS Proceedings 367, 293 (1994).

"Reversal of Step Roughness on Ge-Covered Vicinal Si(001)", F. Wu, X. Chen, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 74, 574 (1995).

"Energetics and Dynamics of Si Ad-Dimers on Si(001)", Z. Y. Zhang, F. Wu, H. J. W. Zandvliet, B. Poelsema, H. Metiu, and M. G. Lagally, Phys. Rev. Letters 74, 3644 (1995).

"Formation of Anion Vacancies by Langmuir Evaporation from InP and GaAs(110) Surfaces at Low Temperatures", P. Ebert, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys Rev. B51, 9696 (1995).

"Comparison of Surface Roughness of Polished Si Wafers Measured by Light Scattering Topography, Soft-X-Ray Scattering, and Atomic-Force Microscopy", C. Teichert, J. F. MacKay, D. E. Savage, M. G. Lagally, M. Brohl, and P. Wagner, Appl. Phys. Lett. 66, 2346 (1995).

"Effects of Hydrogen Impurities on the Diffusion, Nucleation, and Growth of Si on Si(001)", J. E. Vasek, Z. Y. Zhang, C. T. Salling, and M. G. Lagally, Phys. Rev. B51, 17207 (1995).

"Temperature Dependent Vacancy Concentrations on InP(110) Surfaces", M. Heinrich, P. Ebert, M. Simon, K. Urban, and M. G. Lagally, J. Vac. Sci. Technol. A15, 1714 (1995).

"Ge-Induced Reversal of Surface Stress Anisotropy on Si(001)", F. Wu, and M. G. Lagally, Phys. Rev. Letters 75, 2534 (1995).

"Step Bunching Instability of Vicinal Surfaces Under Stress", J. Tersoff, Y. H. Phang, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 75, 2730 (1995).

"Atomic Manipulation for Patterning Ultrathin Films", C. T. Salling, I. I. Kravchenko, and M. G. Lagally, J. Vac. Sci. Technol. B13, 2828 (1995).

"In-situ RHEED and AFM Investigation of Growth Front Morphology Evolution of Si(001) Grown by UHV-CVD", S. Nayak, D. E. Savage, H. N. Chu, M. G. Lagally, and T. F. Kuech, J. Cryst. Growth 157, 168 (1995).

"Influence of Oxygen on Surface Morphology of MOVPE-Grown GaAs", S. Nayak, J. W. Huang, J. M. Redwing, D. E. Savage, M. G. Lagally, and T. F. Kuech, Appl. Phys. Letters 68, 1270 (1996).

"Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy", B. Garni, J. Ma, N. Perkins, J. Liu, T. F. Kuech, and M. G. Lagally, Appl. Phys. Letters 68, 1380 (1996).

"Stress-Driven Self-Organization of Quantum Dot Arrays", J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Letters 76, 1675 (1996).

"Direct Determination of the Interaction Between Vacancies on InP(110) Surfaces", P. Ebert, X. Chen, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys. Rev. Letters 76, 2089 (1996).

"Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)", F. Liu, and M. G. Lagally, Phys. Rev. Letters 76, 3156 (1996).

"Stress-Induced Self-Organization of Nanoscale Structures in SiGe/Si Multilayer Films", C. Teichert, L. J. Peticolas, J. C. Bean, J. Tersoff, and M. G. Lagally, Phys. Rev. B53, 334 (1996).

"Kinetics and Dynamics of Defects on Si(001)", Z. Y. Zhang, F. Wu, and M. G. Lagally, Surface Rev. Lett. 3, 1449 (1996).

"A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy/ Low-Energy Electron Diffraction/Scanning Tunneling Microscopy", J. L. Lin, S. G. Jaloviar, L. Mantese, D. E. Aspnes, L. McCaughan, and M. G. Lagally, MRS Proceedings 406, 401 (1996).

"Transmission Maps of the ACIS UV/Optical Blocking Filters", L. K. Townsley, F. R. Powell, J. F. MacKay, M. G. Lagally, J. A. Nousek, and G. G. Garmire, Proc. SPIE 2805, 134 (1996).

"Element Specific Magnetization of Buried Interfaces Probed by Diffuse X-Ray Resonant Magnetic Scattering", J. F. MacKay, C. Teichert, and M. G. Lagally, Phys. Rev. Letters 77, 3925 (1996).

"Unique Edge Structure and Stability of Fabricated Dimer Islands on Si(001)", F. Liu, C. T. Salling, and M. G. Lagally, Surface Science 370, 0 (1996).

"Photoemission Spectroscopy Studies of the Surface of GaN Films Grown by Vapor Phase Epitaxy", J. Ma, B. Garni, N. Perkins, W. L. O'Brien, T. F. Kuech, and M. G. Lagally, Appl. Phys. Letters 69, 3351 (1996).

"Atomistic Processes in the Early Stages of Thin-Film Growth", Z. Y. Zhang, and M. G. Lagally, Science 276, 377 (1997).

"An Atomistic View of Si(001) Homoepitaxy", Z. Y. Zhang, F. Wu, and M. G. Lagally, Annual Reviews of Materials Sc 27, 525 (1997).

"Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)", F. Liu, and M. G. Lagally, Chemical Reviews 97, 1045 (1997).

"Extended-Spectral-Range FTIR-ATR Spectroscopy on Si Surfaces Using a Novel Si-Coated Ge ATR Prism", E. Rudkevich, D. E. Savage, W. Cai, J. C. Bean, J. S. Sullivan, S. Nayak, T. F. Kuech, L. McCaughan, and M. G. Lagally, J.Vac. Sci. Technol. A15, 2153 (1997).

"Antimony Cluster Manipulation on the Si(001) Surface by Means of STM", I. I. Kravchenko, C. T. Salling, and M. G. Lagally, MRS Proceedings 448, 205 (1997).

"Adatom Pairing Structures for Ge on Si(001): The Initial Stage of Island Formation", X. R. Qin, and M. G. Lagally, Science 278, 1444 (1997).

"Mechanism of Organization of Three-Dimensional Islands in SiGe/Si Multilayers", E. Mateeva, P. Sutter, J. C. Bean, and M. G. Lagally, Appl. Phys. Letters 71, 3233 (1997).

"Magnetization on Vicinal Ferromagnetic Surfaces", D. Zhao, F. Liu, D. L. Huber, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. 475, 519 (1997).

"Self-Organization of Steps in Growth of Strained Films on Vicinal Surfaces", F. Liu, J. Tersoff, and M. G. Lagally, Phys. Rev. Letters 80, 1268 (1998).

"Partial Volume Irradiation: In-Situ Visualization of Double-Strand Break Repair in Human Fibroplasts", B. E. Nelms, R. S. Maser, J. F. MacKay, M. G. Lagally, and J. H. J. Petrini, Science 280, 590 (1998).

"Self-Organized Quantum Dots", M. G. Lagally, J. Chem. Ed. 75, 277 (1998).

"A Double-Mirror W/C Multilayer Monochromator for Radiation Biology Applications", J. F. MacKay, D. W. Pearson, B. E. Nelms, P. M. DeLuca Jr., M. N. Gould, and M. G. Lagally, Medical Physics 25, 773 (1998).

"Si Growth on Partially Relaxed Ge Islands", P. Sutter, E. Mateeva, and M. G. Lagally, J.Vac. Sci. Technol. B16, 1560 (1998).

"A Surface-Based Approach to DNA Computation", L. M. Smith, R. M. Corn, A. E. Condon, M. G. Lagally, A. G. Frutos, Q. Liu, and A. J. Thiel, J. Comp. Biology 5, 255 (1998).

"Local Modification of Surface Structure by Adsorbate-Induced Strain: Ge on Si(001)", X. R. Qin, F. Liu, and M. G. Lagally, Phys. Rev. Letters 81, 2288 (1998).

"Hydrogen-Induced Si Segregation on Ge Covered Si(001)", E. Rudkevich, F. Liu, D. E. Savage, L. McCaughan, T. F. Kuech, and M. G. Lagally, Phys. Rev. Letters 81, 3467 (1998).

"Embedding of 3D Nanoscale SiGe Islands in a Si Matrix", P. Sutter, and M. G. Lagally, Phys. Rev. Letters 81, 3471 (1998).

"Strain-Induced Self-Organization of Steps and Islands in SiGe/Si Multilayer Films", Q. Liu, and M. G. Lagally, Metallurgical and Materials Tr 29A, 2111 (1998).(invited review)

"Self-organized Nanoscale Structures in Si1-xGex/Si Films", C. Teichert, J. C. Bean, and M. G. Lagally, Appl. Phys. A67, 675 (1998).

"Low-Energy Electron Microscopy of Nanoscale Three-Dimensional Islands on Si(001)", P. Sutter, E. Mateeva, J. S. Sullivan, and M. G. Lagally, Thin Solid Films 336, 262 (1998).

"Spontaneous Self-Embedding of Three-Dimensional SiGe Islands", E. Mateeva, P. Sutter, and M. G. Lagally, Appl. Phys. Letters 74, 567 (1999).

"Step Contributions to the Reflectance Difference Spectrum from Si(001)", S. G. Jaloviar, J. L. Lin, V. Zielasek, L. McCaughan, and M. G. Lagally, Phys. Rev. Letters 82, 791 (1999).

"Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator", P. Sutter, and M. G. Lagally, Phys. Rev. Letters 82, 1490 (1999).

"Self-Organized Growth of Alloy Superlattices", P. Venezuela, J. Tersoff, J. A. Floro, E. Chason, D. M Follstaedt, F. Liu, and M. G. Lagally, Nature 397, 678 (1999).

"View of the Empty States of the Si(100)-2x1 Surface Via Scanning Tunneling Microscopy Imaging at Very Low Biases", X. R. Qin, and M. G. Lagally, Phys. Rev. B59, 7293 (1999).

"Self-Organized Replication of Three-Dimensional-Coherent-Island Size and Shape in Multilayer Heteroepitaxial Films", F. Liu, S. E. Davenport, H. Evans, and M. G. Lagally, Phys. Rev. Letters 82, 2528 (1999).

"Properties of Si1-xGex Three-Dimensional Islands,", E. Mateeva, H. Evans, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. A17, 2345 (1999).

"Mechanisms Determining Three-Dimensional SiGe Island Density on Si(001)", J. S. Sullivan, H. Evans, D. E. Savage, M. R. Wilson, and M. G. Lagally, J. Elect. Mat. 28, 426 (1999).

"Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(001) at Submonoloayer Ge Coverages", X. R. Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Letters 84, 4645 (2000).

"Magnetization on Rough Ferromagnetic Surfaces", D. Zhao, F. Liu, D. L. Huber, and M. G. Lagally, Phys. Rev. B62, 11316 (2000).

"Unique Dynamic Appearance of a Ge-Si Ad-Dimer on Si(001)", Z. Y. Lu, F. Liu, C. Z. Wang, X. R. Qin, B. S. Swartzentruber, M. G. Lagally, and K. M. Ho, Phys. Rev. Letters 85, 5603 (2000).

"Correlations among Sputter Pressure, Thickness, and Coercivity in Al/Co/Cu Magnetic Thin Films Sputter-Deposited on Si(001)", B. M. Barnes, J. J. Kelly IV, J. F. MacKay, W. L. O'Brien, and M. G. Lagally, IEEE Trans. Magn. 36, 2948 (2000).

"Flexural-Hinge Positioner for Precision Machining: Finite-Element Simulation", A. A. Elmustafa, and M. G. Lagally, Precision Engineering 25, 77 (2001).

"Island-Corner Barrier Effect in Two-Dimensional Pattern Formation at Surfaces", T. Zhang, J. Zhong, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. B63, 113403 (2001).

"Self-assembly of Two-Dimensional Islands Via Strain-Mediated Coarsening", F. Liu, A. H. Li, and M. G. Lagally, Phys. Rev. Letters 87, 126103 (2001).

"Surface-Stress-Induced Island Shape Transition in Si(001) Homoepitaxy", V. Zielasek, F. Liu, and M. G. Lagally, Phys. Rev. B64, 201320 (2001).

"Step-Induced Magnetic Hysteresis Anisotropy in Ferromagnetic Thin Films", D. Zhao, F. Liu, D. L. Huber, and M. G. Lagally, J. Appl. Phys. 91, 3150 (2002).

"Comparison of Wear Characteristics of Etched-Silicon and Carbon Nanotube Atomic-Force Microscopy Probes", T. Larsen, K. Moloni, F. Flack, M. A. Eriksson, M. G. Lagally, and C. T. Black, Appl. Phys. Letters 80, 1996 (2002).

"Response of a Strained Semiconductor Structure", F. Liu, P. Rugheimer, E. Mateeva, D. E. Savage, and M. G. Lagally, Nature 416, 498 (2002).

"Origin of the Stability of Ge(105) on Si - a New Structure Model and Surface Strain Relaxation", Y. Fujikawa, K. Akiyama, T. Nagao, T. Sakurai, M. G. Lagally, T. Hashimoto, Y. Morikawa, and K. Terakura, Phys. Rev. Letters 88, 176101 (2002).

"Computation with DNA on Surfaces", S. D. Gillmor, P. Rugheimer, and M. G. Lagally, Surface Science 500, 699 (2002).

"Comparison of Magnetic- and Chemical-Boundary Roughness in Magnetic Films and Multilayers", J. J. Kelly IV, B. M. Barnes, F. Flack, D. P. Lagally, D. E. Savage, M. Friesen, and M. G. Lagally, J. Appl. Phys. 91, 9978 (2002).

"Electrically Isolated SiGe Quantum Dots", E. Tevaarwerk, P. Rugheimer, O. M. Castellini, D. G. Keppel, S. T. Utley, D. E. Savage, M. G. Lagally, and M. A. Eriksson, Appl. Phys. Letters 80, 4626 (2002).

"Thin-Film Cliffhanger", M. G. Lagally, and Z. Y. Zhang, Nature 417, 907 (2002).

"Hydrophilic/hydrophobic patterned surfaces as templates for DNA arrays", S. D. Gillmor, A. J. Thiel, T. C. Strother, L. M. Smith, and M. G. Lagally, Langmuir 16, 7223 (2000).

"Progress toward demonstration of a surface based DNA computation: a one word approach to solve a model satisfiability problem", Q. Liu, A. G. Frutos, L. M. Wang, A. J. Thiel, S. D. Gillmor, T. C. Strother, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, Biosystems 52, 25 (1999).

"Surface-based DNA computing operations: DESTROY and READOUT", L. M. Wang, Q. Liu, A. G. Frutos, S. D. Gillmor, A. J. Thiel, T. C. Strother, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, Biosystems 52, 189 (1999).

"Effects of Phonon Scattering and the Atomic Scattering Factor in Low-Energy Electron Diffraction", M. G. Lagally, and M. B. Webb, in The Structure and Chemistry of Solid Surfaces, ed. G. A. Somorjai, Wiley, New York (1969).

"Theoretische und Experimentelle Untersuchung der Intensitaten bei der Beugung Langsamer Elektronen", K. Kambe, M. G. Lagally, and K. Moliere, in Structure et Proprietes des Surfaces des Solides, ed. M. J. Bernard, Centre National de la Recherche Scientifique, Paris (1970).

"Thermal Diffuse Scattering in Low-Energy Electron Diffraction", M. G. Lagally, in LEED: Surface Structures of Solids, ed. M. Laznicka, JCMF Prague (1972).(invited)

"Surface Crystallography Using Low-Energy Electron Diffraction", M. G. Lagally, and M. B. Webb, in LEED: Surface Structures of Solids, ed. M. Laznicka, JCMF Prague (1972).

"Surface Vibrations", M. G. Lagally, in Surface Physics of Materials, ed. J. M. Blakely, Academic Press (1975).(invited)

"Chemisorption: Island Formation and Adatom Interactions", M. G. Lagally, G. C. Wang, and T. M. Lu, in Chemistry and Physics of Solid Surfaces, Vol. II, ed. R. Vanselow, CRC Press, Boca Raton, FL (1979).(invited)

"Observations of Island Formation and Dissolution in Oxygen on W(110) by Low-Energy Electron Diffraction", M. G. Lagally, T. M. Lu, and G. C. Wang, in Ordering in Two Dimensions, ed. S. Sinha, Elsevier (1980).(invited)

"Kinetics of TiSi2 Thin-Film Formation from Ti-Si Reaction Couples", M. Phipps, J. R. Jacobs, C. A. Pico, M. Tang, and M. G. Lagally, in Proceedings of the First International IEEE VLSI Multilevel Interconnection Conference, ed. T. E. Wade, IEEE, New York, NY (1984).

"The Role of Instrumental Broadening in Surface Structure Determination by LEED", T. M. Lu, and M. G. Lagally, in Surface Structure by LEED, ed. P. M. Marcus, Plenum, New York (1985).

"Resistivity and Growth of TiSi2 Films for Different Process Parameters", C. E. Aumann, J. R. Jacobs, M. S. Phipps, C. A. Pico, N. C. Tran, and M. G. Lagally, in Proceedings of the Second IEEE VLSI Multilevel Interconnection Conference, ed. T. E. Wade, IEEE, New York (1985).

"A High-Resolution Surface-Sensitive Scanning Electron Diffractometer Based on a Field Emission Source", J. A. Martin, and M. G. Lagally, in Scanning Electron Microscopy/1985/vol IV., ed. O. Johari, (1985), pg. 1357.

"Measurement of Non-Equilibrium Diffusion from Two-Dimensional Ordering Kinetics", M. G. Lagally, and M. C. Tringides, in Proceedings of the Solvay Conference on Surface Science, ed. F. W. de Wette, Springer, New York (1988).

"An New Cleavage Model for the Si(111)(2x1) Surface", D. Haneman, and M. G. Lagally, in Proceedings of the Solvay Conference on Surface Science, ed. F. W. deWette, Springer, New York (1988).

"Kinetics of Strain Induced Domain Formation at Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, in Kinetics of Ordering and Growth at Surfaces, ed. M. G. Lagally, Plenum, New York, NY (1990).

"Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Study of Si on Si(001)", M. G. Lagally, Y. W. Mo, R. Kariotis, B. S. Swartzentruber, and M. B. Webb, in Kinetics of Ordering and Growth at Surfaces, ed. M. G. Lagally, Plenum, New York, NY (1990).

"Point Defects on Si(001): A Comparative Study", Z. Y. Zhang, F. Wu, and M. G. Lagally, in High-Performance Computing Symposium 1995: Grand Challenges in Computer Simulation, Proceedings of the 1995 Simulation Multiconference, ed. A. Tentner, The Society for Computer Simulation, San Diego, CA (1995), pg. 222.(invited review)

"Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on Vicinal Si(001)", C. Teichert, Y. H. Phang, L. J. Peticolas, J. C. Bean, and M. G. Lagally, in Surface Diffusion: Atomistic and Collective Processes, ed. M. C. Tringides, Plenum Press, New York (1997), pg. 297.

"Structural Defects in Surfaces and Overlayers", M. G. Lagally, in Springer Series in Chem. Physics, Vol. 20, ed. R. Vanselow, Springer Heidelberg (1982).(invited)

"Surface Analysis Techniques", M. G. Lagally, in Advanced Techniques for Characterizing Microstructures, ed. F. W. Wiffen, TMS-AIME, Warrendale, PA (1982).(invited)

"Studies of Extended Defects on Surfaces by Low-Energy Electron Diffraction", M. G. Lagally, and D. G. Welkie, in Advanced Techniques for Characterizing Microstructures, ed. F. W. Wiffen, TMS-AIME, Warrendale, PA (1982).

"Phase Relationships for Adsorbed Layers on Surfaces", T. M. Lu, and M. G. Lagally, in Alloy Phase Diagrams, Proceedings of the Materials Research Society Meeting, Boston 1982, ed. L. H. Bennett, Elsevier (1983).(invited)

"Diffraction Techniques", M. G. Lagally, in Methods of Experimental Physics: Surfaces, ed. R. L. Park, Academic, Orlando, FL (1985).

"Domain-Size Determination in Heteroepitaxial Systems from LEED Angular Profiles", D. Saloner, and M. G. Lagally, in The Structure of Surfaces - I, ed. M. Van Hove, Springer Series in Chemical Physics, Springer, Berlin (1985).

"Diffraction from Disordered Surfaces: An Overview", M. G. Lagally, D. E. Savage, and M. C. Tringides, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, ed. P. K. Larsen, Plenum, New York (1988).

"Quantitative Studies of Growth of Metals on GaAs(110) Using RHEED", D. E. Savage, and M. G. Lagally, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, ed. P. K. Larsen, Plenum, New York (1988).

"Studies of Growth Kinetics on Surfaces with Diffraction", M. C. Tringides, and M. G. Lagally, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, ed. P. K. Larsen, Plenum, New York (1988).

"Comparison of Equilibrium and Non-Equilibrium Diffusion Measurements for W(110)p(2x1)-0", M. C. Tringides, P. K. Wu, and M. G. Lagally, in Diffusion at Interfaces: Microscopic Concepts, ed. M. Grunze, Springer, New York (1988).

"Scanning Tunneling Microscopy Investigation of Surface Morphology in the Growth of GaAs(100)", E. J. Heller, and M. G. Lagally, in Interface Dynamics and Growth, ed. K. S. Liang, Mat. Res. Soc. Symposium Proceedings 237 (1992), pg. 247.

"Scanning Tunneling Microscopy and X-ray Diffraction Studies of Growth and Interfacial Roughness", D. E. Savage, E. J. Heller, Y. H. Phang, M. Schacht, and M. G. Lagally, in urface Disordering: Growth, Roughening, and Phase Transitions, ed. R. Jullien, Nova Science Publishers, Inc., Commack, NY (1992).(invited)

"Atomic Point Defects on III-P(110) Semiconductor Surfaces Observed by STM", P. Ebert, M. G. Lagally, and K. Urban, in Formation of Semiconductor Interfaces (Proceedings of the 4th ICFSI), ed. B. Lengeler, World Scientific, Singapore (1994).

"Self-Organized Nanoscale Structures in Si/Ge Films", F. Liu, and M. G. Lagally, in Proceedings of the 10th Toyota Conference, on "Atomic, Molecular, and Electronic Dynamic Processes on Solid Surfaces", ed. M. Aono, (1997).

"Self-Organized Nanoscale Structures in Si/Ge Films", F. Liu, and M. G. Lagally, Surface Science 386, 169 (1997).

"A Surface-Based Approach to DNA Computation", Q. Liu, Z. Guo, Z. D. Fei, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, in DNA Based Computers II, ed. L. F. Landweber, DIMACS: Series in Discrete Mathematics and Theoretical Computer Science, American Mathematical Society (1998), pg. 123.

"Fundamental Mechanisms of Film Growth", D. E. Savage, F. Liu, V. Zielasek, and M. G. Lagally, in Semiconductors and Semimetals, Vol. 56 – Germanium Silicon, ed. J. Bean, Academic Press, Boston (1999), pg. 49.

"Sharpened Carbon Nanotube Probes", K. Moloni, A. Lal, and M. G. Lagally, in Optical Devices and Diagnostics in Materials Science, Proceedings of SPIE, Vol. 4098, ed. D. L. Andrews, (2000).

"Low-Contact-Angle Polydimethyl Siloxane (PDMS) Membranes for Fabricating Micro-Bioarrays", S. D. Gillmor, B. J. Larson, J. M. Braun, C. E. Mason, L. E. Cruz-Barba, F. Denes, and M. G. Lagally, in Proceedings of the 2nd Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology, ed. A. Dittmar, IEEE Engineering in Medicine and Biology Society (2002), pg. 51.

"Calculated and Measured Auger Lineshapes in SiO2", D. E. Ramaker, J. S. Murday, N. H. Turner, G. Moore, M. G. Lagally, and J. E. Houston, in roceedings of the International Conference on the Physics of SiO2 and Its Interfaces, ed. . , Plenum, NY (1978).

"Self-organized Island Arrays in SiGe/Si Multilayers", C. Teichert, J. Tersoff, and M. G. Lagally, in Morphological Organization in Epitaxial Growth and Removal, ed. Z. Y. Zhang, World Scientific, Singapore (1999).

"Monolithic Fabry-Perot Structure for Soft X-rays", R. Fernandez, C. Riedel, A. Smith, B. Edwards, B. Lai, F. Cerrina, M. G. Lagally, M. J. Carr, A. D. Romig Jr., J. Corno, L. Nevot, B. Pardo, J. M. Slaughter, and C. M. Falco, in SPIE Proceedings, vol. 984, X-ray Multilayers for Diffractometers, Monochromators, and Spectrometers, ed. . , (1988), pg. 256.

"Epitaxial Growth of Si on Si(001)", F. Liu, and M. G. Lagally, in The Chemical Physics of Surfaces, Vol. 8, ed. D. A. King, Elsevier (1997), pg. 258.(invited review)

"The Power of Surface-based DNA Computation", W. Cai, A. E. Condon, R. M. Corn, E. Glaser, Z. D. Fei, A. G. Frutos, Z. Guo, M. G. Lagally, Q. Liu, L. M. Smith, and A. J. Thiel, in Proceedings of the First Annual International Conference on Computational Molecular Biology (Recomb97), ed. . , ACM (1997), pg. 67.(extended abstract)

"One-Dimensional Ordering of Self-assembled Ge Dots on Photolithographically Patterned Structures on Si (001)", B. Yang, A. R. Woll, P. Rugheimer, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. Vol. 715, A8.5 (2002).

"Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy", A. R. Woll, P. Moran, E. M. Rehder, B. Yang, T. F. Kuech, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. Vol. 696, N4.2 (2002).

"Surface and interface roughness in magnetic thin films: A comparison using carbon-nanotube atomic force microscopy and soft-x-ray scattering", B. M. Barnes, F. Flack, J. J. Kelly IV, D. P. Lagally, D. E. Savage, and M. G. Lagally, Proc. SPIE 4780, 61-71 (2002).

"Strain Engineering, Self-Assembly, and Nanoarchitectures in Thin SiGe films on Si", A. R. Woll, P. Rugheimer, and M. G. Lagally, Materials Science and Engineering B96, (2002).

"Thermal roughening of a thin film: a new type of roughening transition", J. B. Maxson, D. E. Savage, F. Liu, R. M. Tromp, M. C. Reuter, and M. G. Lagally, Physics Review Letters 85, 2152-5 (2000).

"Novel dark-field imaging of GaN{0001} surfaces with low-energy electron microscopy", J. B. Maxson, N. Perkins, D. E. Savage, A. R. Woll, L. Zhang, T. F. Kuech, and M. G. Lagally, Surface science 464, 217-22 (2000).

"Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering", B. M. Barnes, Z. Li, D. E. Savage, E. Wiedemann, and M. G. Lagally, J. Appl. Phys. 95, 6654 (2004).