Contributed and Invited Publications

This section lists chronologically all contributed and invited publications.

Publications

  1. "Multiphonon Scattering of Low-Energy Electrons", R. F. Barnes, M. G. Lagally, and M. B. Webb, Phys. Rev. 171, 627 (1968).
  2. "Experimental Determination of the Effective Atomic Scattering Factor and Rigid-Lattice Interference Function in Low-Energy Electron Diffraction", M. G. Lagally and M. B. Webb, Phys. Rev. Letters 21, 1388 (1968).
  3. "Effects of Phonon Scattering and the Atomic Scattering Factor in Low-Energy Electron Diffraction", M. G. Lagally and M. B. Webb, in The Structure and Chemistry of Solid Surfaces, ed. G. A. Somorjai, Wiley, New York (1969).
  4. "Theoretische und Experimentelle Untersuchung der Intensitaten bei der Beugung Langsamer Elektronen", K. Kambe, M. G. Lagally, and K. Moliere, in Structure et Proprietes des Surfaces des Solides, ed. M. J. Bernard, Centre National de la Recherche Scientifique, Paris (1970).
  5. "Low-Energy Electron Diffraction from Ag(111): Intensity-versus-Energy Curves and Absolute Intensity of the (00) Beam", M. G. Lagally, Z. Naturforsch. 25a, 1567 (1970).
  6. "Consequences of the Reciprocity Theorem in Low-Energy Electron Diffraction", M. G. Lagally, Tran C. Ngoc, and M. B. Webb, Surface Sci. 25, 444 (1971).
  7. "Kinematic Low-Energy Electron Diffraction Intensities from Averaged Data: A Method for Surface Crystallography", M. G. Lagally, T. C. Ngoc, and M. B. Webb, Phys. Rev. Letters 26, 1557 (1971).
  8. "Averaged Low-Energy Electron Diffraction Intensities from Ni(111)", M. G. Lagally, T. C. Ngoc, and M. B. Webb, J. Vac. Sci. and Technol. 9, 645 (1972).
  9. "Thermal Diffuse Scattering in Low-Energy Electron Diffraction", M. G. Lagally, in LEED: Surface Structures of Solids, ed. M. Laznicka, JCMF Prague (1972) (invited).
  10. "Surface Crystallography Using Low-Energy Electron Diffraction", M. G. Lagally and M. B. Webb, in LEED: Surface Structures of Solids, ed. M. Laznicka, JCMF Prague (1972).
  11. "A Method to Obtain Kinematic Intensities from Low-Energy Electron Diffraction Data", Tran C. Ngoc, M. G. Lagally, and M. B. Webb, Surface Sci. 35, 117 (1973).
  12. "Elastic Scattering of Low-Energy Electrons from Surfaces", M. B. Webb and M. G. Lagally, Solid State Physics 28, 301 (1973) (invited).
  13. "Fourier Inversion of LEED Data", J. C. Buchholz, M. G. Lagally, and M. B. Webb, Surface Sci. 41, 248 (1974).
  14. "LEED Intensity-Averaging Experiments for Surface-Layer Structure Determination", M. G. Lagally, J. C. Buchholz, and G.-C. Wang, J. Vac. Sci. Technol. 12, 213 (1975) (invited).
  15. "Surface Crystallography of W(110) and W(110)p(2x1)-0: The Position of W Atoms", J. C. Buchholz, G.-C. Wang, and M. G. Lagally, Surface Sci. 49, 508 (1975).
  16. "Surface Vibrations", M. G. Lagally, Chapter 9 of Surface Physics of Materials, ed. J. M. Blakely, Academic Press (1975) (invited).
  17. "LEED Studies of Clean and Overlayered Surfaces", M. B. Webb, J. C. Buchholz, M. G. Lagally, and W. N. Unertl, in The Physical Basis of Heterogeneous Catalysis, eds. E. Drauglis and R. I. Jaffee, Plenum (1975) (invited).
  18. "Order-Disorder Transition and Adatom-Adatom Interactions in a Chemisorbed Overlayer: Oxygen on W(110)", J. C. Buchholz and M. G. Lagally, Phys. Rev. Letters 35, 442 (1975).
  19. "Auger Investigations of Boron-Doped SiO2/Si", G. Moore, H. Guckel, and M. G. Lagally, J. Vac. Sci. Technol. 14, 70 (1977).
  20. "Transition Density of States for Si(100) from L1L23V and L23VV Auger Spectra", J. E. Houston, G. Moore, and M. G. Lagally, Solid State Communications 21, 879 (1977).
  21. "On the Adequacy of the Draw-Sealing of Gas-Filled Glass Ampoules", A. P. MacKenzie, D. G. Welkie, M. G. Lagally, M. Pace, and F. I. Elliott, Develop. Biol. Standard 36, 151 (1977).
  22. "Island-Dissolution Phase Transition in a Chemisorbed Layer", T.-M. Lu, G.-C. Wang, and M. G. Lagally, Phys. Rev. Letters 39, 411 (1977).
  23. "Electromechanical Devices Utilizing Thin Si Diaphragms", H. Guckel, S. Larsen, M. G. Lagally, G. Moore, J. B. Miller, and J. D. Wiley, Appl. Phys. Letters 31, 618 (1977).
  24. "Braze Alloy Spreading on Steel", T. A. Siewert, R. W. Heine, and M. G. Lagally, Welding Journal 57, 31s (1978).
  25. "Monte-Carlo Modeling of Phase Changes in the Chemisorption System O/W (110)", W.-Y. Ching, D. L. Huber, M. Fishkis, and M. G. Lagally, J. Vac. Sci. Technol. 15, 653 (1978).
  26. "Phase Transitions in the Chemisorbed Layer W(110)p(2x1)-0, I. Experimental", G.-C. Wang, T.-M. Lu, and M. G. Lagally, J. Chem. Phys. 69, 479 (1978).
  27. "Chemisorption: Island Formation and Adatom Interactions", M. G. Lagally, G.-C. Wang, and T.-M. Lu, CRC Critical Reviews in Solid State and Materials Sciences 7, 233 (1978) (invited).
  28. "Auger Line Shapes for Ga and As CCV Transitions in GaAs (110)", G. D. Davis and M. G. Lagally, J. Vac. Sci. Techn. 15, 1311 (1978).
  29. "Order-Disorder Transformations in Chemisorbed Layers: O on W(110)", W.-Y. Ching, D. L. Huber, M. G. Lagally, and G.-C. Wang, Surface Science 77, 550 (1978).
  30. "Calculated and Measured Auger Lineshapes in SiO2", D. F. Ramaker, J. S. Murday, N. H. Turner, G. Moore, M. G. Lagally, and J. E. Houston, Proceedings of the International Conference on the Physics of SiO2 and Its Interfaces, Plenum, NY (1978).
  31. "Quantitative Island Size Determination in the Chemisorbed Overlayer O/W (110). I: Instrument Response Function and Substrate Perfection", G.-C. Wang and M. G. Lagally, Surface Science 81, 69 (1979).
  32. "Correlation of Short-Range Order with Sputter Dose in GaAs (110) Using a Vidicon-Based LEED System", D. G. Welkie and M. G. Lagally, J. Vac. Sci. Technol. 16, 784 (1979).
  33. "Calculated and Measured Auger Lineshapes in SiO2", D. E. Ramaker, J. S. Murday, N. H. Turner, G. Moore, M. G. Lagally, and J. E. Houston, Phys. Rev. B19, 5375 (1979).
  34. "Investigation of the Instrument Response of a Vidicon-Based LEED System", D. G. Welkie and M. G. Lagally, Applications of Surface Sci. 3, 272 (1979).
  35. "Chemisorption: Island Formation and Adatom Interactions", M. G. Lagally, G.-C. Wang, and T.-M. Lu, in Chemistry and Physics of Solid Surfaces, Vol. II, ed. R. Vanselow, CRC Press, Boca Raton, FL (1979) (invited).
  36. "Island Formation and Condensation of a Chemisorbed Overlayer", T.-M. Lu, G.-C. Wang, and M. G. Lagally, Surface Sci. 92, 133 (1980).
  37. "LEED Study of the Surface Defect Structure of Ag (111) Epitaxially Grown on Mica", D. G. Welkie, M. G. Lagally, and R. L. Palmer, J. Vac. Sci. Techn. 17, 453 (1980).
  38. "Surface Defects and Thermodynamics of Chemisorbed Layers", M. G. Lagally, T.-M. Lu, and D. G. Welkie, J. Vac. Sci. Techn. 17, 223 (1980) (invited).
  39. "Quantitative Analysis of Step Densities Using a Two-Dimensional Random Probability Model", T.-M. Lu, S. R. Anderson, M. G. Lagally, and G.-C. Wang, J. Vac. Sci. Technol. 17, 207 (1980) (extended abstract).
  40. "Determination of Shallow Core Level Line Shapes in Selected Compound Semiconductors", G. D. Davis, P. E. Viljoen, and M. G. Lagally, J. Electron Spectroscopy and Related Phenomena 20, 305 (1980) .
  41. "The Resolving Power of a LEED Instrument and the Analysis of Surface Defects", T.-M. Lu and M. G. Lagally, Surface Sci. 98, 695 (1980).
  42. "Analysis of the Composition of a Discolored Aluminum Film Vapor-Deposited onto Plastic", M. G. Lagally, S. R. Anderson, N. C. Tran, T. Hoang, and K. Gilleo, Thin Solid Films 72, 151 (1980).
  43. "Comparison of Site-Specific Densities of States Determined from Auger Spectra and XPS-Determined Valence Band Spectra in GeS(001) and GeSe(001)", G. D. Davis, P. E. Viljoen, and M. G. Lagally, J. Electron Spectroscopy and Related Phenomena 21, 135 (1980).
  44. "Observations of Island Formation and Dissolution in Oxygen on W(110) by Low-Energy Electron Diffraction", M. G. Lagally, T.-M. Lu, and G.-C. Wang, in Ordering in Two Dimensions, ed. S. Sinha, Elsevier (1980) (invited).
  45. "Defect Structures at Solid Surfaces", M. G. Lagally and D. G. Welkie, Surface and Interface Analysis 3, 8 (1981) (invited).
  46. "A Simple Technique for Measuring Electron Beam Angular Divergence", J. A. Martin and M. G. Lagally, J. Vac. Sci. Technol. 18, 58 (1981).
  47. "Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes", G. D. Davis, D. E. Savage, and M. G. Lagally, J. Electron Spectroscopy and Related Phenomena 23, 25 (1981).
  48. "The Effect of Instrumental Broadening on LEED Intensity-Energy Profiles", T.-M. Lu, M. G. Lagally, and G.-C. Wang, Surface Sci. 104, L229 (1981).
  49. "Electron Spectroscopy Analysis of Contact Surfaces in the Wear of Carbon Brushes Against Copper Commutators", D. E. Savage, M. G. Lagally, and M. E. Schrader, Appl. Surface Sci. 7, 142 (1981).
  50. "LEED Beam Shapes and Fluctuation Phenomena Near an Order-Disorder Transition", T.-M. Lu, L. H. Zhao, and M. G. Lagally, J. Vac. Sci. Technol. 18, 504 (1981) (extended abstract).
  51. "Correction for Loss Effects in Valence-Band XPS Spectra by Deconvolution", G. D. Davis and M. G. Lagally, J. Vac. Sci. Technol. 18, 727 (1981).
  52. "LEED Study of the Surface Defect Structure of Ge Grown Epitaxially on GaAs(110)", H. M. Clearfield, D. G. Welkie, and M. G. Lagally, J. Vac. Sci. Technol. 18, 802 (1981) (extended abstract).
  53. "Site-Specific Densities of States for Cleaved and Sputtered GaAs(110) from Auger Line Shapes", G. D. Davis, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. 18, 904 (1981) (extended abstract).
  54. "Quantitative Island Size Determination in the Chemisorbed Overlayer W(110)p(2x1)-0 II: Theoretical Calculations", T.-M. Lu, G.-C. Wang, and M. G. Lagally, Surface Sci. 107, 494 (1981).
  55. "LEED Investigation of Extended Defects at the Surface of Ge Films Grown Epitaxially on GaAs(110), H. M. Clearfield, D. G. Welkie, T.-M. Lu, and M. G. Lagally, J. Vac. Sci. Technol. 19, 323 (1981).
  56. "Density of Empty States in GeS(001) and GeSe(001)", P. E. Viljoen, G. D. Davis, and M. G. Lagally, S. Afr. J. Phys. 4, 44 (1981).
  57. "Direct Determination of the Island Size Distribution for Parallelogram-Shaped Islands", L.-H. Zhao, T.-M. Lu, and M. G. Lagally, Appl. Surface Sci. 11/12, 634 (1982).
  58. "Structural Defects in Surfaces and Overlayers", M. G. Lagally, in Chemistry and Physics of Solid Surfaces, Vol. IV, eds. R. Vanselow and R. Howe, Springer Series in Chem. Physics, Vol. 20, Springer Heidelberg (1982) (invited).
  59. "The Present Status of Low-Energy Electron Diffraction", M. G. Lagally, Appl. Surface Sci. 13, 260 (1982) (invited).
  60. "Diffraction from Surfaces with Randomly Distributed Steps", T.-M. Lu and M. G. Lagally, Surface Sci. 120, 47 (1982).
  61. "Analysis of Surface Structural Defects by Low-Energy Electron Diffraction", D. G. Welkie and M. G. Lagally, Thin Solid Films 93, 219 (1982) (invited).
  62. "Thermodynamics of Overlayer Ordering and Epitaxy", M. G. Lagally, J. Vac. Sci. Technol. 20, 554 (1982) (invited).
  63. "An Alternative Approach to the Quantitative Determination of Grain Size Distribution in X-Ray Diffraction", L.-H. Zhao, T.-M. Lu, and M. G. Lagally, Acta Cryst. A38, 800 (1982).
  64. "Diffraction from Overlayer Islands with Positional Correlation", T.-M. Lu, L.-H. Zhao, M. G. Lagally, G.-C. Wang, and J. E. Houston, Surface Sci. 122, 519 (1982).
  65. "Surface Analysis Techniques", M. G. Lagally, in Advanced Techniques for Characterizing Microstructures, eds. F. W. Wiffen and J. A. Spitznagel, TMS-AIME, Warrendale, PA (1982) (invited).
  66. "Studies of Extended Defects on Surfaces by Low-Energy Electron Diffraction", M. G. Lagally and D. G. Welkie, in Advanced Techniques for Characterizing Microstructures, eds. F. W. Wiffen and J. A. Spitznagel, TMS-AIME, Warrendale, PA (1982).
  67. "A High-Resolution Low-Energy Electron Diffractometer Based on a Field Emission Source", J. A. Martin and M. G. Lagally, J. Vac. Sci. Technol. A1, 1210 (1983).
  68. "Phase Relationships for Adsorbed Layers on Surfaces", T.-M. Lu and M. G. Lagally, in Alloy Phase Diagrams, Proceedings of the Materials Research Society Meeting, Boston 1982, eds. L. H. Bennett, T. B. Massalski, and B. C. Giessen, Elsevier (1983) (invited).
  69. "Analysis of Surface Structural Defects Using LEED and RHEED", M. G. Lagally, Ultramicroscopy 11, 103 (1983) (extended abstract).
  70. "Instrumentation for Low-Energy Electron Diffraction, M. G. Lagally and J. A. Martin, Rev. Sci. Instrum. 54, 1273 (1983) (invited).
  71. "Dynamics of Two-Dimensional Ordering of An Overlayer with Four-Fold Degenerate Ground State: W(110)p(2x1)-0", P. K. Wu, J. H. Perepezko, J. T. McKinney, and M. G. Lagally, Phys. Rev. Letters 51, 1577 (1983).
  72. "Species-Specific Densities of States of Ga and As in the Chemisorption of H20 on GaAs(110)," K. D. Childs, W.-A. Luo, and M. G. Lagally, J. Vac. Sci. Technol. A2, 593 (1984).
  73. "Initial Ordering Kinetics of a Randomly Stepped GaAs(110) Surface", H. M. Clearfield and M. G. Lagally, J. Vac. Sci. Technol. A2, 844 (1984).
  74. "A Method for the Calculation of LEED Angular Profiles to Estimate Overlayer Spacings and Island Size Distributions", D. Saloner and M. G. Lagally, J. Vac. Sci. Technol. A2, 935 (1984).
  75. "Kinetics of TiSi2 Thin-Film Formation from Ti-Si Reaction Couples", M. Phipps, J. Jacobs, C. Pico, M. Tang, and M. G. Lagally, in Proceedings of the First International IEEE VLSI Multilevel Interconnection Conference, ed. T. E. Wade, IEEE, New York, NY (l984).
  76. "Species-Specific Densities of States of Ga and As in the Chemisorption of Oxygen on GaAs(110)", K. D. Childs and M. G. Lagally, Phys. Rev. B30, 5742 (1984).
  77. "Diffraction Techniques", M. G. Lagally, in Methods of Experimental Physics: Surfaces, eds. R. L. Park and M. G. Lagally, Academic, Orlando, FL (1985).
  78. "The Role of Instrumental Broadening in Surface Structure Determination by LEED", T.-M. Lu and M. G. Lagally, in Surface Structure by LEED, ed. P. M. Marcus, Plenum, New York (1985).
  79. "Species-Specific Densities of States of Ga and As in the Chemisorption of CO and C on GaAs(110)", K. D. Childs and M G. Lagally, J. Vac. Sci. Technol. A3, 1024 (1985).
  80. "Resistivity-Process Relationships in TiSi2 Formed from Ti-Si Reaction Couples", J. Jacobs, C. Pico, M. Phipps, N. Tran, and M. G. Lagally, J. Vac. Sci. Technol. A3, 723 (1985) (extended abstract).
  81. "Two-Dimensional Overlayer Growth: Island Size and Island Separation Distributions", D. Saloner, P. K. Wu, and M. G. Lagally, J. Vac. Sci. Technol. A3, 1531 (1985).
  82. "Domain-Size Determination in Heteroepitaxial Systems from LEED Angular Profiles", D. Saloner and M. G. Lagally in The Structure of Surfaces - I, eds. M. Van Hove and S. Y. Tong, Springer Series in Chemical Physics, Springer, Berlin (1985).
  83. "Analysis of Domain-Size Distributions in Epitaxial Growth Using LEED Angular Profiles", D. Saloner and M. G. Lagally, Mat. Res. Soc. Symp. Proc. 41, 179 (1985).
  84. "Resistivity and Growth of TiSi2 Films for Different Process Parameters", C. E. Aumann, J. R. Jacobs, M. S. Phipps, C. Pico, N. C. Tran, and M. G. Lagally, in Proceedings of the Second IEEE VLSI Multilevel Interconnection Conference, ed. T. E. Wade, IEEE, New York (1985).
  85. "Crystallography of In on GaAs(110): Possible Relationship of Laterally Inhomogeneous Structure to Fermi Level Pinning", D. E. Savage and M. G. Lagally, Phys. Rev. Letters 55, 959 (1985).
  86. "A High-Resolution Surface-Sensitive Scanning Electron Diffractometer Based on a Field Emission Source", J. A. Martin and M. G. Lagally, Scanning Electron Microscopy/1985/vol IV., ed. O. Johari, pg. 1357.
  87. "Reliability of Low-Energy Electron Diffraction for Studies of Critical Phenomena at Surfaces", W. Moritz and M. G. Lagally, Phys. Rev. Letters 56, 865 (1986).
  88. "Ordering Kinetics for O on W(110)", M. Tringides, P. K. Wu, W. Moritz, and M. G. Lagally, Ber. Bunsenges. Phys. Chem. 90, 277 (1986).
  89. "Structure, Stability, and Origin of (2xn) Phases on Si(100)", J. A. Martin, D. E. Savage, W. Moritz, and M. G. Lagally, Phys. Rev. Letters 56, 1936 (1986).
  90. "Influence of Process Parameter Variation on the Reflectivity of Sputter-Deposited W-C Multilayer Diffraction Gratings", B. Sager, P. Benson, K. Jahoda, J. R. Jacobs, J. J. Bloch, W. J. Sanders, and M. G. Lagally, J. Vac. Sci. Technol. A4, 647 (1986).
  91. "RHEED Study of the Growth of In on GaAs(110) at Different Temperatures", D. E. Savage and M. G. Lagally, J. Vac. Sci. Technol. B4, 943 (1986).
  92. "Compositional and Morphological Analysis of Silver Chloride Films Deposited by Evaporation and RF Sputtering", A. Belkind, M. Dror, E. Ezell, W.-A. Luo, J. R. Jacobs, and M. G. Lagally, Thin Solid Films 162, 113 (1986).
  93. Low-Energy Electron Diffraction", M. G. Lagally, in Metals Handbook, vol. 10, American Society for Metals, Metals Park, OH (1986).
  94. "Determination of Terrace Size and Edge Roughness in Vicinal Si(100) Surfaces by Surface Sensitive Diffraction", D. Saloner, J. A. Martin, M. C. Tringides, D. E. Savage, C. E. Aumann, and M. G. Lagally, J. Appl. Phys. 61, 2884 (1987).
  95. "Direct Observation of Amorphous-to-Crystalline Transition in the Growth of Sb on GaAs(110) by RHEED", D. E. Savage and M. G. Lagally, Appl. Phys. Letters 50, 1719 (1987).
  96. "Scaling in the Growth Kinetics of a Chemisorbed Overlayer: W(110)p(2x1)-0", M. C. Tringides, P. K. Wu, and M. G. Lagally, Phys. Rev. Letters 59, 315 (1987).
  97. "Atomic Steps on Si(100) Surfaces", J. A. Martin, C. E. Aumann, D. E. Savage, M. C. Tringides, M. G. Lagally, W. Moritz, and F. Kretschmar, J. Vac. Sci. Technol. A5, 615 (1987).
  98. "The Use of Peak Intensity in Diffraction Measurements of Growth Kinetics on Surfaces", M. C. Tringides and M. G. Lagally, Surface Sci. 195, L159 (1988).
  99. "Quantitative RHEED Measurements of Surface Roughness on GaAs(100)", E. J. Heller, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. A6, 1484 (1988).
  100. "Step Structure and Dimer Row Correlations in Vicinal Si(100)", C. E. Aumann, D. E. Savage, R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. A6, 1963 (1988).
  101. "A Beam Line for Layered Synthetic Microstructure Studies", J. Boudry, C. Riedel, B. Edwards, M. Lagally, R. Redaelli, F. Cerrina, C. Falco, R. Fernandez, J. H. Underwood, and M. Hettrick, Nuclear Instrum. and Methods A266, 351 (1988).
  102. "Three-Bond Scission and Structure of the Cleaved Si(111) Surface", D. Haneman and M. G. Lagally, J. Vac. Sci. Technol. B6, 1451 (1988).
  103. "Direct Determination of the Size Distribution of Uncorrelated Overlayer Islands from Diffraction Profiles", R. Kariotis, D. E. Savage, and M. G. Lagally, Surface Sci. 204, 491 (1988).
  104. "Diffraction from Disordered Surfaces: An Overview", M. G. Lagally, D. E. Savage, and M. C. Tringides, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, eds. P. K. Larsen and P. J. Dobson, Plenum, New York (1988).
  105. "Quantitative Studies of Growth of Metals on GaAs(110) Using RHEED", D. E. Savage and M. G. Lagally, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, eds. P. K. Larsen and P. J. Dobson, Plenum, New York (1988).
  106. "Studies of Growth Kinetics on Surfaces with Diffraction", M. C. Tringides and M. G. Lagally, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, eds. P. K. Larsen and P. J. Dobson, Plenum, New York (1988).
  107. "Comparison of Equilibrium and Non-Equilibrium Diffusion Measurements for W(110)p(2x1)-0", M. C. Tringides, P. K. Wu, and M. G. Lagally, in Diffusion at Interfaces: Microscopic Concepts, eds. M. Grunze, H. Kreuzer, and J. J. Weimer, Springer, New York (1988).
  108. "Kinetics of Titanium Silicide Formation on Single-Crystal Si: Experiment and Modeling", C. A. Pico and M. G. Lagally, J. Appl. Phys. 64, 4957 (1988).
  109. "Direct Determination of the Size Distribution of Arbitrary Surface Configurations from Diffraction Measurements. I. Theory", R. Kariotis, D. W. Kruger, D. E. Savage, and M. G. Lagally, Surface Sci. 205, 591 (1988).
  110. "Measurement of Non-Equilibrium Diffusion from Two-Dimensional Ordering Kinetics", M. G. Lagally and M. C. Tringides, in Proceedings of the Solvay Conference on Surface Science, ed. F. W. de Wette, Springer, New York (1988).
  111. "An New Cleavage Model for the Si(111)(2x1) Surface", D. Haneman and M. G. Lagally, in Proceedings of the Solvay Conference on Surface Science, ed. F. W. deWette, Springer, New York (1988).
  112. "A Monochromator Based on W/C Multilayers of 40Å Layer Spacing", A. Smith, C. Riedel, B. Edwards, D. Savage, B. Lai, A. Ray-Chaudhuri, F. Cerrina, M. Lagally, J. Underwood, and C. Falco, SPIE Proceedings, vol. 983, Thin-Film Neutron Optical Devices, (1988), p. 185. Also vol. 984, X-ray Multilayers for Diffractometers, Monochromators, and Spectrometers, (1988) p.31.
  113. "Monolithic Fabry-Perot Structure for Soft X-rays", F. E. Fernandez, C. Riedel, A. Smith, B. Edwards, B. Lai, F. Cerrina, M. G. Lagally, M. J. Carr, A. D. Romig, Jr., J. Corno, L. Nevot, B. Pardo, J. M. Slaughter, and C. M. Falco, SPIE Proceedings, vol. 984, X-ray Multilayers for Diffractometers, Monochromators, and Spectrometers, (1988) p. 256.
  114. "Ordering Kinetics of a Chemisorbed Overlayer: 0/W(110)", P. K. Wu, M. C. Tringides, and M. G. Lagally, Phys. Rev. B39, 7595 (1989).
  115. "Application of Rate Equation Modeling to Molecular Beam Epitaxy", R. Kariotis and M. G. Lagally, J. Vac. Sci. Technol. B7, 269 (1989).
  116. "Rate Equation Modeling of Interface Width" C. E. Aumann, R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. A7, 2180 (1989).
  117. "Diffusive Disordering Kinetics in One Dimension", M. C. Tringides, J. Luscombe, and M. G. Lagally, Phys. Rev. B39, 9377 (1989).
  118. "Rate Equation Modeling of Epitaxial Growth", R. Kariotis and M. G. Lagally, Surface Sci. 216, 557 (1989).
  119. "Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Si Surfaces", B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A7, 2901 (1989).
  120. "A Simple Monochromator Based on X-ray Multilayer Mirrors", A. Smith, C. Riedel, B. Edwards, D. Savage, B. Lai, A. Ray Chauduri, F. Cerrina, M. G. Lagally, J. Underwood, and C. M. Falco, Rev. Sci. Instrum. 60, 2003 (1989).
  121. "Ordering Kinetics at Surfaces", M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y.-W. Mo, Ultramicroscopy 31, 87 (1989). (Invited).
  122. "Anisotropic Growth and Layer-by-Layer Epitaxy", M. G. Lagally, R. Kariotis, D. E. Savage, and Y.-W. Mo, Surface Sci. 219, L551 (1989).
  123. "Determination of the Size Distribution of Noncrystalline Regions on Crystalline Substrates", D. W. Kruger, D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 63, 402 (1989).
  124. "Influence of Beam Coherence on Measurements of Roughness in Film Growth", R. Kariotis and M. G. Lagally, Appl. Phys. Letters 55, 960 (1989).
  125. "Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)", Y.-W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 63, 2393 (1989).
  126. "Measurement of Conversion Temperatures for Si(111) 2x1", D. Haneman, J. J. Rownd, and M. G. Lagally, Surface Sci. 224, L965 (1989).
  127. "Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)", Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A8, 201 (1990).
  128. "Observations of Strain Effects on the Si(001) Surface Using Scanning Tunneling Microscopy", B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A8, 210 (1990).
  129. "Model Diffraction Profiles Parallel to Rough Step Edges", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, J. Appl. Phys. 67, 2848 (1990).
  130. "Growth of Si on Flat and Vicinal Si(001) Surfaces: A Scanning Tunneling Microscopy Study", Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. B8, 232 (1990).
  131. "The Effect of External Stress on Si Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, and M. G. Lagally, J. Vac. Sci. Technol. A8, 2658 (1990).
  132. "Maximum-Entropy Calculation of the Island Size Distribution for a Simple Diffraction Profile", R. Kariotis and M. G. Lagally, J. Appl. Phys. 68, 21 (1990).
  133. "Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y.-W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Letters 65, 1020 (1990).
  134. "RHEED Study of the Kinetics of the (2x1)-to-(7x7) Transformation in Cleaved Si(111)", B. Garni, D. E. Savage, and M. G. Lagally, Surface Sci. 235, L324 (1990).
  135. "Direct Determination of Step and Kink Energies on Vicinal Si(001)", B. S. Swartzentruber, Y.-W. Mo, R. Kariotis, M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 65, 1913 (1990).
  136. "Kinetics of Strain Induced Domain Formation at Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, in Kinetics of Ordering and Growth at Surfaces, ed. M. G. Lagally, Plenum, New York, NY (1990).
  137. "Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Study of Si on Si(001)", M. G. Lagally, Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, and M. B. Webb, in Kinetics of Ordering and Growth at Surfaces, ed. M. G. Lagally, Plenum, New York, NY (1990).
  138. "Characterization of Hollow Cathode DC Discharge Growth of Diamond: Rotational Vibronic Emission in a CH4-H2 Discharge", H. N. Chu, A. R. Lefkow, E. A. den Hartog, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, MRS Proceedings 162, 163 (1990).
  139. "The Measurement of Gas Kinetic Temperature in a CH4-H2 Discharge", H.-N. Chu, T. R. Lefkow, E. A. Den Hartog, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, in New Diamond Science and Technology, pg. 233, Mat. Res. Soc. Pittsburgh, PA (1990).
  140. "Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y.-W. Mo and M. G. Lagally, Modern Physics Letters B4, 1379 (1990) (invited).
  141. "Determination of Roughness Correlations in Multilayer Films for X-ray Mirrors", D. E. Savage, J. Kleiner, N. Schimke, Y.-H. Phang, T. Jankowski, J. Jacobs, R. Kariotis, and M. G. Lagally, J. Appl. Phys. 69, 1411 (1991).
  142. "Domain Boundary Control of Edge Roughness in Vicinal Si(001)", B. S. Swartzentruber, Y.-W. Mo, and M. G. Lagally, Appl. Phys. Lett. 58, 822 (1991).
  143. "Modeling Two-Dimensional Diffraction Profiles for Disordered Vicinal Surfaces and Random Island Configurations", J. Kleiner, C. E. Aumann, Y.-W. Mo, R. Kariotis, and M. G. Lagally, Surface Sci. 240, 293 (1991).
  144. "Surface Step Configurations Under Strain: Kinetics and Step-Step Interactions", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, Surface Sci. 242, 23 (1991).
  145. "Activation Energy for Surface Diffusion of Si on Si(001): A Scanning Tunneling Microscopy Study", Y.-W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 66, 1998 (1991).
  146. "Anisotropy in Surface Migration of Si and Ge on Si(111)", Y.-W. Mo and M. G. Lagally, Surface Sci. 248, 313 (1991).
  147. "Scanning Tunneling Microscopy Studies of Epitaxial Growth", M. G. Lagally in Physics News in 1991, ed. P. Schewe, American Institute of Physics, (1991).
  148. "Scanning Tunneling Microscopy Study of the Growth Process of Ge on Si(001)", Y.-W. Mo and M. G. Lagally, J. Cryst. Growth 111, 876 (1991).
  149. "Calculation of Terrace Edge Structure Distributions for Vicinal Surfaces", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, Surface Sci. 248, 295 (1991).
  150. "Diffraction Determination of the Structure of Metastable 3D Clusters of Ge on Si(001)", C. E. Aumann, Y.-W. Mo, and M. G. Lagally, Appl. Phys. Letters 59, 1061 (1991).
  151. "Adatome auf Festkörperoberflächen", M. G. Lagally, Physikalische Blätter 47, 383 (1991).
  152. "Measurement of Gas Kinetic Temperature in a CH4-H2 Discharge During the Growth of Diamond", H.-N. Chu, E. A. Den Hartog, A. R. Lefkow, J. Jacobs, L. W. Anderson, M. G. Lagally and J. E. Lawler, Phys. Rev. A44, 3796 (1991).
  153. "Evolution of Vicinal Si(001) from Double to Single-Atomic-Height Steps with Temperature", J. J. de Miguel, C. E. Aumann, R. Kariotis, and M. G. Lagally, Phys. Rev. Letters 67, 2830 (1991).
  154. "Roughness Evolution in Films and Multilayer Structures", M. G. Lagally, in Physics of X-ray Multilayer Structures, Optical Soc. of Am. Technical Digest 7, 78 (1992).
  155. "Surface Self-Diffusion of Si on Si(001)", Y.-W. Mo, J. Kleiner, M. B. Webb and M. G. Lagally, Surface Sci. 268, 275 (1992).
  156. "Interfacial Roughness Correlation in Multilayer Films: Influence of Total Film and Individual-Layer Thicknesses", D. E. Savage, N. Schimke, Y.-H. Phang, and M. G. Lagally, J. Appl. Phys. 71, 3283 (1992).
  157. "In-Situ Scanning Tunneling Microscopy Study of the Growth Front Morphology of GaAs(001) Grown by Molecular Beam Epitaxy", E. J. Heller and M. G. Lagally, Appl. Phys. Letters 60, 2675 (1992).
  158. "X-ray Diffraction Determination of Interfacial Roughness Correlations in SixGe1-x/Si and GaAs/AlxGa1-xAs Superlattices", Y.-H. Phang, D. E. Savage, T. F. Kuech, M. G. Lagally, J. S. Park, and K. L. Wang, Appl. Phys. Letters 60, 2986 (1992).
  159. "Scanning Tunneling Microscopy Investigation of Surface Morphology in the Growth of GaAs(100)", E. J. Heller and M. G. Lagally, in Interface Dynamics and Growth, eds. K. S. Liang, M. P. Anderson, R. F. Bruinsma, and G. Scoles, Mat. Res. Soc. Symposium Proceedings 237, 249 (1992).
  160. "Scanning Tunneling Microscopy Studies of the Initial Stages of Ge Growth on Si(001)", Y.-W. Mo and M. G. Lagally, Mat. Sci. and Engr. B14, 321 (1992).
  161. "Response to Comment by Pimpinelli, Wolf, and Villain", Y.-W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 69, 986 (1992).
  162. "Scanning Tunneling Microscopy and X-ray Diffraction Studies of Growth and Interfacial Roughness", D. E. Savage, E. J. Heller, Y.-H. Phang, M. Schacht, and M. G. Lagally, in Surface Disordering: Growth, Roughening, and Phase Transitions, eds. R. Jullien, J. Kertesz, P. Meakin, and D. Wolf, Nova Science Publishers, Inc., Commack, NY (1992) (invited).
  163. "Temperature Dependence of the Step Structure of Vicinal Si(001) Surfaces", C. E. Aumann, J. J. de Miguel, and M. G. Lagally, Surface Sci. 275, 1 (1992).
  164. "Experimental Determination of the Strain Potentials on Vicinal Si(001) Surfaces", J. J. deMiguel, C. E. Aumann, S. Jaloviar, R. Kariotis, and M. G. Lagally, Phys. Rev. B46, 10257 (1992).
  165. "Low-Energy Electron Diffraction", M. G. Lagally, Encyclopedia of Materials Characterization, eds. C. R. Brundle, C. A. Evans, and S. Wilson, Buttersworth (1992).
  166. "Diffraction from Multilayer Structures with Partially Correlated Roughness", Y.-H. Phang, R. Kariotis, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 72, 4627 (1992).
  167. "The Temperature Dependence of Diamond Film Morphology", H.-N. Chu, A. R. Lefkow, E. A. Den Hartog, L. W. Anderson, M. G. Lagally, and J. E. Lawler, Plasma Sources Sci. Technol. 1, 187 (1992).
  168. "An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin Films", M. G. Lagally, Jpn. J. Appl. Phys. 32, 1493 (1993) (invited).
  169. "Scanning-Tunneling-Microscope Tip-Induced Migration of Vacancies on GaP(110)", Ph. Ebert, M. G. Lagally, and K. Urban, Phys. Rev. Letters 70, 1437 (1993).
  170. "The Behavior of Steps on Si(001) as a Function of Vicinality", B. S. Swartzentruber, N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. B47, 13432 (1993).
  171. "X-Ray Diffraction Measurement of Partially Correlated Interfacial Roughness in Multilayers", Y.-H. Phang, R. Kariotis, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 74, 3181 (1993).
  172. "Variable-Temperature STM Measurements of Step Kinetics on Si(001)", N. Kitamura, B. S. Swartzentruber, M. G. Lagally, and M. B. Webb, Phys. Rev. Rapid Comm. B48, 5704 (1993).
  173. "Step and Kink Energetics on GaAs(001)", E. J. Heller, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 71, 743 (1993).
  174. "Real-Time Observations of Vacancy Diffusion on Si(001)-(2x1) by Scanning Tunneling Microscopy", N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 71, 2082 (1993).
  175. "X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers", S. Nayak, J. M. Redwing, T. F. Kuech, Y.-H. Phang, D. E. Savage, and M. G. Lagally, Mat. Res. Soc. Symp. Proceedings 312, 137 (1993).
  176. "Determination of Interfacial Roughness Correlation in W/C Multilayer Films: Comparison Using Soft and Hard X-Ray Diffraction". D. E. Savage, Y. H. Phang, J. J. Rownd, J. F. MacKay, and M. G. Lagally, J. Appl. Phys. 74, 6158 (1993).
  177. "Vacancy Diffusion on Si(001)-2x1", Z. Y. Zhang, H. Chen, B. C. Bolding, and M. G. Lagally, Phys. Rev. Letters 71, 3677 (1993).
  178. "Roughening of Steps During Homoepitaxial Growth on Si(001)", F. Wu, S. G. Jaloviar, D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 71, 4190 (1993).
  179. "Quantitative Electron Diffraction from Thin Films", M. G. Lagally and D. E. Savage, MRS Bulletin 18, 24 (1993).
  180. "Atom Motion on Surfaces", M. G. Lagally, Physics Today 46, (11), 24 (November 1993). Reprinted in PARITY, (in Japanese), December 1994.
  181. "Atomic-Scale Mechanisms for Surfactant Mediated Layer-by-Layer Growth in Homoepitaxy", Z. Y. Zhang and M. G. Lagally, Phys. Rev. Letters 72, 693 (1994).
  182. "Direct Observation of Charge-Dependent Relaxations of Anion Vacancies in III-P(110) Semiconductor Surfaces by STM", Ph. Ebert, K. Urban, and M. G. Lagally, Phys. Rev. Letters 72, 840 (1994).
  183. "Film Stress of Sputtered W/C Multilayers and Strain Relaxation Upon Annealing", J. F. Geisz, T. F. Kuech, M. G. Lagally, F. Cardone, and R. M. Potenski, J. Appl. Phys. 75, 1530 (1994).
  184. "Universal Size Relation in Long-Range-Ordered Structures", P. Zeppenfeld, M. Krysowski, C. Romainczyk, G. Comsa, and M. G. Lagally, Phys. Rev. Letters 72, 2737 (1994).
  185. "Fabrication of Atomic-Scale Structures on Si(001) Surfaces", C. T. Salling and M. G. Lagally, Science 265, 502 (1994).
  186. "Vacancy-Vacancy Interaction on Ge-covered Si(001)", X. Chen, Z.Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 73, 850 (1994).
  187. "Determining the Vertical Correlation of Interfacial Roughness in Multilayer Films Using X-ray Scattering", Y.-H. Phang, D. E. Savage, Z.Y. Zhang, and M. G. Lagally, in Physics of X-Ray Multilayer Structures 1994, Technical Digest Series Vol. 6, pg. 79, (Optical Society of America, Washington, DC, 1994).
  188. "Atomic Point Defects on III-P(110) Semiconductor Surfaces Observed by STM", Ph. Ebert, M. G. Lagally, and K. Urban, in Formation of Semiconductor Interfaces (Proceedings of the 4th ICFSI), eds. B. Lengeler, H. Lüth, W. Mönch, and J. Pollmann, World Scientific, Singapore (1994).
  189. "Bonding Geometry Dependence of Fractal Growth on Metal Surfaces", Z. Y. Zhang, X. Chen, and M. G. Lagally, Phys. Rev. Letters 73, 1829 (1994).
  190. "Correlated Interfacial Roughness Anisotropy in Si1-xGex/Si Superlattices", Y.-H. Phang, Ch. Teichert, M.G. Lagally, L. Peticolas, J. C. Bean, and E. Kasper, Phys. Rev. B50, 14,435 (1994).
  191. "The Influence of Controlled Impurity Incorporation on Surface and Interfacial Roughness in GaAs/AlxGa1-xAs Structures Grown by MOVPE", J. M. Redwing, S. Nayak, D. E. Savage, M. G. Lagally, and T. F. Kuech, J. Crystal Growth 145, 792 (1994).
  192. "Response of Calcium Fluoride to 275-2550 eV Photons", R. E. Carrillo, D.W.Pearson, P. M. DeLuca, J.F. MacKay, and M.G. Lagally, Phys. Med. Biol. 39, 1875 (1994).
  193. "Strain Relaxation and Oxide Formation on Annealed W/C Multilayers", J. F. Geisz, Y. H. Phang, T. F. Kuech, M. G. Lagally, F. Cardone, and R. M. Potenski, Mat. Res. Soc. Proceedings 318, 225 (1994).
  194. "Influence of Impurities on Mechanisms of Growth in Metal Organic Vapor Phase Epitaxy GaAs(001) Studies by AFM", S. Nayak, J.M. Redwing, J.W. Huang, M.G. Lagally, and T.F. Kuech, MRS Proceedings 367, 293 (1994).
  195. "Reversal of Step Roughness on Ge-Covered Vicinal Si(001)", F. Wu, X. Chen, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 74, 574 (1995).
  196. "Energetics and Dynamics of Si Ad-Dimers on Si(001)", Zhenyu Zhang, Fang Wu, H. J. W. Zandvliet, B. Poelsema, H. Metiu, and M.G. Lagally, Phys. Rev. Letters 74, 3644 (1995).
  197. "Formation of Anion Vacancies by Langmuir Evaporation from InP and GaAs(110) Surfaces at Low Temperatures", Ph. Ebert, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys Rev. B51, 9696 (1995).
  198. "Comparison of Surface Roughness of Polished Si Wafers Measured by Light Scattering Topography, Soft-X-Ray Scattering, and Atomic-Force Microscopy", C. Teichert, J.F. MacKay, D.E. Savage, M. G. Lagally, M. Brohl, and P. Wagner, Appl. Phys. Lett. 66, 2346 (1995).
  199. "Effects of Hydrogen Impurities on the Diffusion, Nucleation, and Growth of Si on Si(001)", J. E. Vasek, Zhenyu Zhang, C. T. Salling, and M.G. Lagally, Phys. Rev. B51, 17207 (1995).
  200. "Temperature Dependent Vacancy Concentrations on InP(110) Surfaces", M. Heinrich, Ph. Ebert, M. Simon, K. Urban, and M. G. Lagally, J. Vac. Sci. Technol. A15, 1714 (1995).
  201. "Ge-Induced Reversal of Surface Stress Anisotropy on Si(001)", Fang Wu and M. G. Lagally, Phys. Rev. Letters 75, 2534 (1995).
  202. "Step Bunching Instability of Vicinal Surfaces Under Stress", J. Tersoff, Y. H. Phang, Zhenyu Zhang, and M. G. Lagally, Phys. Rev. Letters 75, 2730 (1995).
  203. "Point Defects on Si(001): A Comparative Study", Zhenyu Zhang, Fang Wu, and M. G. Lagally, High-Performance Computing Symposium 1995: Grand Challenges in Computer Simulation, in Proceedings of the 1995 Simulation Multiconference, ed.: A. Tentner, The Society for Computer Simulation, San Diego, CA (1995), pg. 222. (invited review).
  204. "Atomic Manipulation for Patterning Ultrathin Films", C. T. Salling, I. I. Kravchenko, and M. G. Lagally, J. Vac. Sci. Technol. B13, 2828 (1995).
  205. "In-situ RHEED and AFM Investigation of Growth Front Morphology Evolution of Si(001) Grown by UHV-CVD", S. Nayak, D. E. Savage, H.-N. Chu, M. G. Lagally, and T. F. Kuech, J. Cryst. Growth 157, 168 (1995).
  206. "Influence of Oxygen on Surface Morphology of MOVPE-Grown GaAs", S. Nayak, J.W. Huang, J.M. Redwing, D.E. Savage, M.G. Lagally, and T.F. Kuech, Appl. Phys. Letters 68, 1270 (1996).
  207. "Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy", B. Garni, Jian Ma, N. Perkins, Jutong Liu, T. F. Kuech, and M.G. Lagally, Appl. Phys. Letters 68, 1380 (1996).
  208. "Self-Organization of Quantum Dot Superlattices", J. Tersoff, C. Teichert, and M.G. Lagally, Phys. Rev. Letters 76, 1675 (1996).
  209. "Direct Determination of the Interaction Between Vacancies on InP(110) Surfaces", Ph. Ebert, Xun Chen, M. Heinrich, M. Simon, K. Urban, and M.G. Lagally, Phys. Rev. Letters 76, 2089 (1996).
  210. "Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)", Feng Liu and M. G. Lagally, Phys. Rev. Letters 76, 3156 (1996).
  211. "Stress-Induced Self-Organization of Nanoscale Structures in SiGe/Si Multilayer Films", C. Teichert, L.J. Peticolas, J.C. Bean, J. Tersoff, and M.G. Lagally, Phys. Rev. B53, 16,334 (1996).
  212. "Kinetics and Dynamics of Defects on Si(001)", Zhenyu Zhang, Fang Wu, and M.G. Lagally, Surface Rev. Lett. 3, 1449 (1996). (invited review).
  213. "A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy/ Low-Energy Electron Diffraction/Scanning Tunneling Microscopy", Jia-Ling Lin, S. G. Jaloviar, L. Mantese, D. E. Aspnes, L. McCaughan, and M. G. Lagally, MRS Proceedings 406, 401(1996).
  214. "Transmission Maps of the ACIS UV/Optical Blocking Filters", L. K. Townsley, F.R. Powell, J. F. MacKay, M. G. Lagally, J. A. Nousek, and G. G. Garmire, Proc. SPIE 2805, 134 (1996).
  215. "Element Specific Magnetization of Buried Interfaces Probed by Diffuse X-Ray Resonant Magnetic Scattering", J. F. MacKay, C. Teichert, and M. G. Lagally, Phys. Rev. Letters 77, 3925 (1996).
  216. "Unique Edge Structure and Stability of Fabricated Dimer Islands on Si(001)", Feng Liu, C. T. Salling, and M. G. Lagally, Surface Science 370, L213 (1996).
  217. "Photoemission Spectroscopy Studies of the Surface of GaN Films Grown by Vapor Phase Epitaxy", Jian Ma, B. Garni, N. Perkins, W. L. O’Brien, T. F. Kuech, and M. G. Lagally, Appl. Phys. Letters 69, 3351 (1996).
  218. "The Power of Surface-based DNA Computation", W. Cai, A. E. Condon, R.M. Corn, E. Glaser, Z. Fei, A. Frutos, Z. Guo, M.G. Lagally, Q. Liu, L.M. Smith, and A. Thiel, Proceedings of the First Annual International Conference on Computational Molecular Biology (Recomb97), ACM, January 1997, pg. 67. (extended abstract)
  219. "Atomistic Processes in the Early Stages of Thin-Film Growth", Zhenyu Zhang and M. G. Lagally, Science 276, 377 (1997) (invited review).
  220. "Epitaxial Growth of Si on Si(001)", Feng Liu and M. G. Lagally, Ch.7 of The Chemical Physics of Surfaces, Vol. 8, eds: D.A. King and D.P.Woodruff, Elsevier, (1997) pg. 258 (invited review).
  221. "An Atomistic View of Si(001) Homoepitaxy", Zhenyu Zhang, Fang Wu, and M. G. Lagally, Annual Reviews of Materials Science 27, 525 (1997) (invited review).
  222. "Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)", Feng Liu and M. G. Lagally, Chemical Reviews 97, 1045 (1997) (invited review).
  223. "Extended-Spectral-Range FTIR-ATR Spectroscopy on Si Surfaces Using a Novel Si-Coated Ge ATR Prism", E. Rudkevich, D.E. Savage, W. Cai, J.C. Bean, J.S. Sullivan, S. Nayak, T. F. Kuech, L. McCaughan, and M. G. Lagally, J.Vac. Sci. Technol. A15, 2153 (1997).
  224. "Antimony Cluster Manipulation on the Si(001) Surface by Means of STM", I.I. Kravchenko, C. T. Salling, and M. G. Lagally, MRS Proceedings 448, 205 (1997).
  225. "Self-Organized Nanoscale Structures in Si/Ge Films", Feng Liu and M.G. Lagally, Proceedings of the 10th Toyota Conference, on "Atomic, Molecular, and Electronic Dynamic Processes on Solid Surfaces", eds. M. Aono and M. Kawai, Surface Sci. 386, 169 (1997) (invited review). Also as book, Elsevier, Amsterdam, 1997.
  226. "Adatom Pairing Structures for Ge on Si(001): The Initial Stage of Island Formation", X.R.Qin and M. G. Lagally, Science 278, 1444 (1997).
  227. "Mechanism of Organization of Three-Dimensional Islands in SiGe/Si Multilayers", E. Mateeva, P. Sutter, J.C. Bean, and M.G. Lagally, Appl. Phys. Letters 71, 3233 (1997).
  228. "Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on Vicinal Si(001)", C. Teichert, Y.H. Phang, L.J. Peticolas, J.C. Bean, and M.G. Lagally, in Surface Diffusion: Atomistic and Collective Processes, ed. M. C. Tringides, Plenum Press, New York, 1997, pg. 297.
  229. "Magnetization on Vicinal Ferromagnetic Surfaces", D. Zhao, Feng Liu, D. L. Huber, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. 475, 519 (1997).
  230. "Self-Organization of Steps in Growth of Strained Films on Vicinal Surfaces", Feng Liu, J. Tersoff, and M. G. Lagally, Phys. Rev. Letters 80, 1268 (1998).
  231. "Partial Volume Irradiation: In-Situ Visualization of Double-Strand Break Repair in Human Fibroplasts", B.E. Nelms, R.S. Maser, J.F. MacKay, M. G. Lagally, and J.H.J. Petrini, Science 280, 590 (1998).
  232. "Self-Organized Quantum Dots", M. G. Lagally, J. Chem. Ed. 75, 277 (1998) (invited).
  233. "A Double-Mirror W/C Multilayer Monochromator for Radiation Biology Applications", J. F. MacKay, D.W. Pearson, B.E. Nelms, P.M. DeLuca, Jr., M.N. Gould, and M.G. Lagally, Medical Physics 25, 773 (1998).
  234. "Si Growth on Partially Relaxed Ge Islands", P. Sutter, E. Mateeva, and M.G. Lagally, J.Vac. Sci. Technol. B16, 1560 (1998).
  235. "A Surface-Based Approach to DNA Computation", L.M. Smith, R.M. Corn, A. E. Condon, M.G. Lagally, A.G. Frutos, Q. Liu, and A.J. Thiel, J. Comp. Biology 5, 255 (1998).
  236. "Local Modification of Surface Structure by Adsorbate-Induced Strain: Ge on Si(001)", X.R. Qin, Feng Liu, and M.G. Lagally, Phys. Rev. Letters 81, 2288 (1998).
  237. "Hydrogen-Induced Si Segregation on Ge Covered Si(001)", E. Rudkevich, Feng Liu, D.E. Savage, L. McCaughan, T.F. Kuech, and M. G. Lagally, Phys. Rev. Letters 81, 3467 (1998).
  238. "Embedding of 3D Nanoscale SiGe Islands in a Si Matrix", P. Sutter and M. G. Lagally, Phys. Rev. Letters 81, 3471 (1998).
  239. "Strain-Induced Self-Organization of Steps and Islands in SiGe/Si Multilayer Films", Feng Liu and M. G. Lagally, Metallurgical and Materials Transactions, 29A, 2111 (1998), (invited review).
  240. "Self-organized Nanoscale Structures in Si1-xGex/Si Films", C. Teichert, J. C. Bean, M. G. Lagally, Appl. Phys. A67, 675 (1998).
  241. "A Surface-Based Approach to DNA Computation", Q. Liu, Z. Guo, Z.D. Fei, A. C. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith", in DNA Based Computers II, eds. L. F. Landweber and E.B. Baum, DIMACS: Series in Discrete Mathematics and Theoretical Computer Science, American Mathematical Society, 1998, pg. 123
  242. "Low-Energy Electron Microscopy of Nanoscale Three-Dimensional Islands on Si(001)", P. Sutter, E. Mateeva, J. S. Sullivan, and M. G. Lagally, Thin Solid Films 336, 262 (1998).
  243. "Spontaneous Self-Embedding of Three-Dimensional SiGe Islands", E. Mateeva, P. Sutter, and M.G. Lagally, Appl. Phys. Letters 74, 567 (1999).
  244. "Step Contributions to the Reflectance Difference Spectrum from Si(001)", S.G. Jaloviar, J.-L. Lin, V. Zielasek, L. McCaughan, and M.G. Lagally, Phys. Rev. Letters 82, 791 (1999).
  245. "Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator", P. Sutter and M. G. Lagally, Phys. Rev. Letters 82, 1490 (1999).
  246. "Self-Organized Growth of Alloy Superlattices", P. Venezuela, J. Tersoff, J.A. Floro, E. Chason, D.M Follstaedt, Feng Liu, and M. G. Lagally, Nature 397, 678 (1999).
  247. "Self-organized Island Arrays in SiGe/Si Multilayers", C. Teichert, J. Tersoff, M. G. Lagally, in Morphological Organization in Epitaxial Growth and Removal, Eds. Z. Zhang and M. G. Lagally, World Scientific, Singapore, 1999.
  248. "View of the Empty States of the Si(100)-2x1 Surface Via Scanning Tunneling Microscopy Imaging at Very Low Biases", X. R. Qin and M. G. Lagally, Phys. Rev. B59, 7293 (1999).
  249. "Fundamental Mechanisms of Film Growth", D.E. Savage, Feng Liu, V. Zielasek, and M. G. Lagally, Ch. 2 of Semiconductors and Semimetals, Vol. 56 – Germanium Silicon, eds. John Bean and Robert Hull, Academic Press, Boston (1999) pgs. 49-100
  250. "Self-Organized Replication of Three-Dimensional-Coherent-Island Size and Shape in Multilayer Heteroepitaxial Films", Feng Liu, Sarah E. Davenport, Heather Evans, and M. G. Lagally, Phys. Rev. Letters 82, 2528 (1999).
  251. "Properties of Si1-xGex Three-Dimensional Islands," J.S. Sullivan, E. Mateeva, H. Evans, D.E. Savage, and M.G. Lagally, J. Vac. Sci. Technol. A17, 2345 (1999).
  252. "Mechanisms Determining Three-Dimensional SiGe Island Density on Si(001)", J. S. Sullivan, H. Evans, D.E. Savage, M.R. Wilson, and M.G. Lagally, J. Elect. Mat. 28, 426 (1999).
  253. "Connection between Structure and Electronic Properties in Epitaxial Magnetic Layers", K. N. Altmann, J. A. Con Foo, F. J. Himpsel, J. F. Kelly, M. G. Lagally, J. F. McKay, W. L. O’Brien, J. E. Ortega, and D. Y. Petrovykh, Epitaxial Growth - Principles and Applications, eds. A.-L. Barabasi, M. Krishnamurthy, Feng Liu, and T. Pearsall, MRS Proceedings 570, 141 (1999).
  254. "Dislocation-Induced Surface Strain on (001) Silicon-On-Insulator", P. Sutter and M.G. Lagally, Epitaxial Growth - Principles and Applications, eds. A.-L. Barabasi, M. Krishnamurthy, Feng Liu, and T. Pearsall, MRS Proceedings 570, 235 (1999).
  255. "Surfaces and Interfaces of Solids, Structure of", Feng Liu, M. Hohage, and M. G. Lagally, Encyclopedia of Applied Physics, Update 2, eds: H. Immergut and G. Trigg, Wiley-VCH Verlag, Berlin, 1999.
  256. "Strain Engineering of Nanoscale Structures in the Ge/Si System", Feng Liu and M. G. Lagally, in Precision Science and Technology for Perfect Surfaces, eds. Y. Furukawa, Y. Mori, and T. Kataoka, Proceedings of the 9th International Conference on Production Engineering (ICPE9), Publication Series No. 3, Japan Society for Precision Engineering, Tokyo, Japan, 1999, pg. 648.
  257. "Progress toward Demonstration of Surface-Based DNA Computation: a One-Word Approach to Solve a Model Satisfiability Problem", Q. Liu, A. G. Frutos. L. Wang, A. Thiel, S. D. Gillmor, C. T. Strother, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, BioSystems 52, 25 (1999).
  258. "Surface based DNA Computation Operations: DESTROY and READOUT", L. Wang, Q. Liu, A. G. Frutos, S. D. Gillmor, A. Thiel, C. T. Strother, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, BioSystems 52, 189 (1999).
  259. "Formation of Chain and V-shaped Structures in the Initial Stage Growth of Si/Si(100)", Shudun Liu, C.S. Jayanthi, S.-Y. Wu, X.-R. Qin, Zhenyu Zhang, and M. G. Lagally, Phys. Rev. B61, 4421 (2000).
  260. "Adsorption, Diffusion, and Nucleation of Adatoms", P. Sutter, E. Mateeva, and M.G. Lagally, Ch. 6.2 in "Properties of Crystalline Silicon", EMIS (Electronic Materials Information Service) Datareviews, ed. E. Kasper, (invited review), 2000.
  261. "Reconstruction of Si(001), (111), and (110) Surfaces", Ch.5.1, and "Vicinal Si(001) and Si(111) Surfaces", Ch. 5.2, V. Zielasek, Feng Liu, and M.G. Lagally, in "Properties of Crystalline Silicon", EMIS (Electronic Materials Information Service) Datareviews, ed. R. Hull, (invited review), 2000.
  262. "Nucleation-Less 3D Island Formation in Low-Misfit Heteroepitaxy," P. Sutter and M.G. Lagally, Phys. Rev. Letters 84, 4637 (2000).
  263. "Strain, Morphology, and Self-Organization in the Growth of Si/Ge 'Quantum Dot' Nanoclusters", A.R. Woll, J. S. Sullivan, Feng Liu, and M. G. Lagally, in Cluster and Nanostructure Interfaces, eds. P. Jena, S.N. Khanna, and B.K. Rao, World Scientific, 2000, pg 631.
  264. "Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(001) at Submonoloayer Ge Coverages", X.R. Qin, B.S. Swartzentruber, and M.G. Lagally, Phys. Rev. Letters 84, 4645 (2000).
  265. "Equilibrium Shape of Two-Dimensional Islands under Stress", Adam Li, Feng Liu, and M.G. Lagally, Phys. Rev. Letters, 85, 1922 (2000).
  266. “Thermal Roughening of a Very Thin Film: A New Type of Roughening Transition”, J.B. Maxson, D.E. Savage, Feng Liu, R. Tromp, M. Reuter, and M. G. Lagally, Phys. Rev. Letters, 85, 2152 (2000).
  267. "Use of a Hydrophobic/Hydrophilic Patterned Surface for Small High-Quality DNA Arrays", S. D. Gillmor, Q. Liu, A.J. Thiel, L. Smith, and M. G. Lagally, Langmuir 16, 7223 (2000).
  268. "Novel Dark-Field Imaging of GaN (0001) Surfaces with Low-Energy Electron Microscopy", J.B. Maxson, N. Perkins, D.E. Savage, A.R. Woll, L. Zhang, T.F. Kuech, and M.G. Lagally, Surface Science 464, 217 (2000).
  269. "Direct Measurement of the Diffusion of Ge Dimers on Si(001)", X.R. Qin, B.S. Swartzentruber, and M. G. Lagally, Phys. Rev. Letters 85, 3660 (2000).
  270. "Magnetization on Rough Ferromagnetic Surfaces", D. Zhao, Feng Liu, D. L. Huber, and M. G. Lagally, Phys. Rev. B62, 11316 (2000).
  271. "Sharpened Carbon Nanotube Probes", K. Moloni, A. Lal, and M. G. Lagally, in Optical Devices and Diagnostics in Materials Science, Proceedings of SPIE, Vol. 4098, eds. D. L. Andrews, T. Asakura, S. Jutamalia, W. P. Kirk, M. G. Lagally, R. B. Lal, and J. D. Trollinger, August 2000.
  272. "Creation of 'Quantum Platelets' via Strain-Controlled Self-Organization at Steps", Adam H. Li, Feng Liu, D.Y. Petrovych, J.-L. Lin, J. Viernow, F.J. Himpsel, and M. G. Lagally, Phys. Rev. Letters 85, 5380 (2000).
  273. "Unique Dynamic Appearance of a Ge-Si Ad-Dimer on Si(001)", Zhong-Yi Lu, Feng Liu, Cai-Zhuang Wang, X.R.Qin, B.S. Swartzentruber, M.G. Lagally, and Kai-Ming Ho, Phys. Rev. Letters 85, 5603 (2000).
  274. "Correlations among Sputter Pressure, Thickness, and Coercivity in Al/Co/Cu Magnetic Thin Films Sputter-Deposited on Si(001)", B. M. Barnes, J.J. Kelly IV, J. F. MacKay, W.L. O'Brien, and M. G. Lagally, IEEE Trans. Magn. 36, 2948 (2000).
  275. "Flexural-Hinge Guided Motion Nanopositioner Stage for Precision Machining: Finite Element Simulations ", A. A. Elmustafa and M. G. Lagally, Precision Engineering 25, 77 (2001).
  276. "Island-Corner Barrier Effect in Two-Dimensional Pattern Formation at Surfaces", T. Zhang, J. Zhong, Zhenyu Zhang, and M.G. Lagally, Phys. Rev. B63, 113403 (2001).
  277. "Self-Assembly of Two-Dimensional Islands Via Strain-Mediated Coarsening", Feng Liu, A. H. Li, and M. G. Lagally, Phys. Rev. Letters 87, 126103-1, (2001).
  278. "Surface-Stress-Induced Island Shape Transition in Si(001) Homoepitaxy"V. Zielasek, Feng Liu, Yuegang Zhao, J. B. Maxson, and M. G. Lagally, Phys. Rev. (Rapid Comm.) B64, 201320 (2001).
  279. "Step-Induced Magnetic Hysteresis Anisotropy in Ferromagnetic Thin Films", D. Zhao, Feng Liu, D.L. Huber, and M.G. Lagally, J. Appl. Phys. 91, 3150 (2002).
  280. “Comparison of Wear Characteristics of Etched-Silicon and Carbon Nanotube Atomic-Force Microscopy Probes”, T. Larsen, K. Moloni, F. Flack, M. A. Eriksson, M. G. Lagally, and C. T. Black, Appl. Phys. Letters 80, 1996 (2002).
  281. "Response of a Strained Semiconductor Structure", Feng Liu, Paul Rugheimer, E. Mateeva, D.E. Savage, and M.G. Lagally, Nature 416, 498 (2002).
  282. "Origin of the Stability of Ge(105) on Si – a New Structure Model and Surface Strain Relaxation", Y. Fujikawa, K. Akiyama, T. Nagao, T. Sakurai, M. G. Lagally, T. Hashimoto, Y. Morikawa, and K. Terakura, Phys. Rev. Letters 88, 176101 (2002).
  283. "Low-Contact-Angle Polydimethyl Siloxane (PDMS) Membranes for Fabricating Micro-Bioarrays", S.D. Gillmor, B.J. Larson, J.M. Braun, C.E. Mason, L.E. Cruz-Barba, F. Denes, and M.G. Lagally, Proceedings of the 2nd Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology, eds. A Dittmar and D. Beebe, IEEE Engineering in Medicine and Biology Society, 2002, pg. 51.
  284. "Computation with DNA on Surfaces", S.D. Gillmor, P. Rugheimer, and M. G. Lagally, Surface Science 500, 699 (2002).
  285. “Comparison of Magnetic- and Chemical-Boundary Roughness in Magnetic Films and Multilayers”, J.J. Kelly IV, B.M.Barnes, F. Flack, D.P. Lagally, D.E. Savage, M. Friesen, and M.G. Lagally, J. Appl. Phys. 91, 9978 (2002).
  286. “Electrically Isolated SiGe Quantum Dots”, Emma Tevaarwerk, P. Rugheimer, O.M. Castellini, D.G. Keppel, S.T. Utley, D.E. Savage, M.G. Lagally, and M.A. Eriksson, Appl. Phys. Letters 80, 4626 (2002).
  287. “Thin-Film Cliffhanger", M. G. Lagally and Zhenyu Zhang, (News and Views) Nature 417, 907 (2002).
  288. “Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy”, A.R. Woll, P. Moran, E.M. Rehder, B. Yang, T.F. Kuech, and M.G. Lagally, in Current Issues in Heteroepitaxial Growth – Stress Relaxation and Self-Assembly, Mat. Res. Soc. Symp. Proc. 696, N4.2 (2002).
  289. "Rebonded-SB-Step Model of Ge/Si(105) 2x1: A First-Principles Theoretical Study", T. Hashimoto, Y. Morikawa, Y. Fujikawa, T. Sakurai, M. G. Lagally, and K. Terakura, Surface Science 513, L445 (2002).
  290. "Self-Organized Quantum Dots", A.R. Woll, P. Rugheimer, and M.G. Lagally, in Quantum Dot Heterostructures – Fabrication, Application, and Theory, ed. M.S. Shur and E. Borovitskaya, Int. J. High-Speed Electronics and Systems 12, 45 (2002). (invited review). Also as book, Selected Topics in Electronics and Systems, Vol. 25; pp. 45-78 (2002).
  291. "Nanostressors and the Nanomechanical Response of a Thin Silicon Film on Insulator", Feng Liu, Minghuang Huang, P.P. Rugheimer, and M.G. Lagally, Phys. Rev. Letters 89, 136101-1 (2002).
  292. "Strain Engineering in Germanium Quantum Dot Growth on Silicon and Silicon-on-Insulator", M.G. Lagally and P.P. Rugheimer, Jpn. J. Appl. Phys. 41, 4863 (2002).
  293. "Strain Engineering, Self-Assembly, and Nanoarchitectures in Thin SiGe Films on Si", A. R. Woll, P. Rugheimer, and M. G. Lagally, Materials Science & Engineering B96, 94 (2002).
  294. "One-Dimensional Ordering of Self-Assembled Ge Dots on Photolithographically Patterned Structures on Si(001)", B. Yang, A.R. Woll, P. Rugheimer, and M. G. Lagally, MRS Proceedings 715, A8.5 (2002).
  295. "Surface and Interface Roughness in Magnetic Thin Films: A Comparison Using Carbon-Nanotube Atomic Force Microscopy and Soft-x-ray Resonant Scattering", B.M. Barnes, F. Flack, J.J.G. Kelly IV, D. P. Lagally, D.E. Savage, and M.G. Lagally, SPIE Proceedings 4780, 61 (2002).
  296. "Practical Design and Simulation of Silicon-Based Quantum-Dot Qubits", Mark Friesen, P. P. Rugheimer, D. E. Savage, M. G. Lagally, D. W. van der Weide, Robert Joynt, and M. A. Eriksson, Phys. Rev. B67, 121301(R) (2003).
  297. “Spontaneous Transition from Epitaxially Constrained to Equilibrium Ge Nanocrystals on Silicon-on-Insulator (100)”, E. Sutter , P. Sutter, P. Zahl, P. Rugheimer, and M.G. Lagally, Surface Sci. 532-535, 785 (2003).
  298. “Nanoscale Strain and Band Structure Engineering Using Epitaxial Stressors on Ultrathin Silicon-on-Insulator”, P. Sutter, E. Sutter, P. P. Rugheimer, and M.G. Lagally, Surface Sci. 532-535 , 789 (2003).

  299. “Transition from Reciprocal-Space to Real-Space Surface Science – the Advent of the Scanning Tunneling Microscope”, M.G. Lagally,  J.Vac. Sci. Technol. A21, S54 (2003) (invited).

  300. “Fabrication of Ge Nanoclusters on Si with a Buffer-Layer-Assisted Growth Method”, K. Yoo, A. P. Li, Zhenyu Zhang, H. Weitering, F. Flack, M. G. Lagally, and J. Wendelken, Surf. Sci. 546, L803 (2003).

  301. “Local-Strain-Mediated-Chemical-Potential Control of Quantum Dot Self-Organization in Heteroepitaxy”, B. Yang, F. Liu, and M. G. Lagally, Phys. Rev. Letters 92, 025502-1 (2004).

  302.   “Bending of Nanoscale Thin Si Film Induced by Growth of Ge Islands:  Hut vs Dome”, Minghuang Huang, Martin Cuma, M.G. Lagally, and Feng Liu, MRS Proceedings 791, Q6.4.1-6 (2004).

  303. “Controlled Deposition of Picoliter Amounts of Fluid Using an Ultrasonically Driven Micropipette”, B. J. Larson, S. D. Gillmor, and M.G. Lagally, Rev. Sci. Instrum. 75, 832 (2004).

  304. “Coulomb Blockade in a Si:SiGe Two-Dimensional Electron Gas Quantum Dot,” L.J. Klein, K. Slinker, J.L. Truitt, S. Goswami, K.L.M. Lewis, S.N. Coppersmith, D.W. van der Weide, Mark Friesen, R. Blick, D.E. Savage, M.G. Lagally, Charlie Tahan, Robert Joynt, M.A. Eriksson, J.O. Chu, J.A. Ott, P.M. Mooney, Appl. Phys. Letters 84, 4047 (2004).

  305. “Quantifying the Thickness of Magnetically Active Layers Using X-ray Resonant Magnetic Scattering”, B.M. Barnes, Z. W. Li, D.E. Savage, E. Wiedemann, and M.G. Lagally, J. Appl. Phys. 95, 6654 (2004).

  306. “Photoluminescence and Local Structure of Ge Nanoclusters on Si(001) without a Wetting Layer”, A. P. Li, F. Flack, M.F. Chisholm, K. Yoo, Zhenyu Zhang, H. Weitering, J. Wendelken, and M. Lagally, Phys. Rev. B69, 245310 (2004).

  307. “Directed Assembly and Strain Engineering of SiGe Films and Nanostructures”, M.G. Lagally, M.A. Eriksson, Z.Q. Ma, Feng Liu, G. Celler, L.J. Klein, D.E. Savage, K. Slinker, M. M. Roberts, B. Yang, P.P. Zhang, and M.-H. Huang, Electrochem. Soc. Proceedings PV 2004-7, eds. D. Harame et al., pg.1153 (2004).

  308. “Bed of Nails on Silicon”, M.G. Lagally and R.H Blick, (News and Views) Nature 432, 450 November 26, (2004).

  309. “Imaging of All Dangling Bonds and Their Potential on the Ge/Si(105) Surface by Non-Contact Atomic Force Microscopy”, T. Eguchi, Y. Fujikawa, K. Akiyama, T. An, M. Ono, T. Hashimoto, Y. Morikawa, K. Terakura, T. Sakurai, M. G. Lagally, Y. Hasegawa, Phys. Rev. Letters 93, 266102 (2004).

  310. "Direct Synchrotron X-ray Microdiffraction Measurements of Strain and Bending in Micromachined Silicon Devices", P. G. Evans, P. P. Rugheimer, M. M. Roberts, M.G. Lagally, C.-H. Lee, Y.N. Xiao, B. Lai, and Z.H. Cai, Proceedings of IMECE04, 2004 ASME International Mechanical Engineering Congress, in Applications of X-rays in Mechanical Engineering 2004.

  311. “Hydrogen-Induced Instability of the Ge(105) Surface”, Y. Fujikawa , T. Nagao , Y. Yamada-Takamura , T. Sakurai, T. Hashimoto , Y. Morikawa , K. Terakura, and M. G. Lagally, Phys.Rev. Letters 94, 086105 (2005)

  312. "Pattern Formation on Silicon-on-Insulator" F. S. Flack, Bin Yang, M.-H. Huang, M. Marcus, J. Simmons, O. M. Castellini, M. A. Eriksson, Feng Liu, and M. G. Lagally, in Kinetics-Driven Nanopatterning on Surfaces, edited by Eric Chason, George H. Gilmer, Hanchen Huang, and Enge Wang (Mater. Res. Soc. Symp. Proc. 849, MRS, Warrendale, PA , 2005), KK1.3.

  313. “Template-Directed Nanotube Network Using Self-Ordered Si Nanocrystals”, B. Yang, M.S. Marcus, H. F. Tang, P.P. Zhang, Z.W. Li, B.J. Larson. D.E. Savage, J.M. Simmons, O. M. Castellini, M.A. Eriksson, and M.G. Lagally, Appl. Phys. Letters 86, 263107 (2005).

  314. "Microfabricated Strained Substrates for Ge Epitaxial Growth", P. G. Evans, P. P. Rugheimer, M. G. Lagally, C. H. Lee, A. Lal, Y. Xiao, B. Lai, and Z. Cai, J. Appl. Phys. 97, 103501 (2005).
  315. "Germanium Hut Nanostressors on Freestanding Thin Silicon Membranes", P. G. Evans, D. S. Tinberg, M. M. Roberts, M. G. Lagally,Y. Xiao, B. Lai, and Z. Cai, Appl. Phys. Letters 87, 073112 (2005).
  316. "Quantitative Analysis of Electric Force Microscopy: The Role of Sample Geometry", E. Tevaarwerk, D.G. Keppel, P. Rugheimer, M. G. Lagally, and M.A. Eriksson, Rev. Sci. Instrum. 76, 053707 (2005).
  317. "N-type Thin-film Transistors Fabricated on Transferred, Elastically Strain-Shared Si/SiGe/Si Membranes", H.-C. Yuan, M. M. Roberts, D. E. Savage, M.G. Lagally, and ZQ Ma, 2005 International Semiconductor Device Research Symposium, ed. IEEE, Piscataway, NJ, (2005) pg. 207.
  318. Mechanical Stability of Ultra Thin Ge/Si Film on SiO2: the Effect of the Si/SiO2 Interface", Minghuang Huang, J. A. Nairn, M. G. Lagally, and Feng Liu, J. Appl. Phys. 97, 116108 (2005).
  319. "Bending of Nanoscale Ultrathin Substrates by Growth of Strained Thin Films and Islands", Minghuang Huang, P. Rugheimer, M. G. Lagally, and Feng Liu, Phys. Rev. 72, 085450 (2005).
  320. "Germanium Hut Nanostressors on Free-Standing Ultrathin SOI", M. M. Roberts, Daniel Tinberg, P. G. Evans, M. G. Lagally, C.-H. Lee, Yanan Xiao, Barry Lai, and Zhonghou Cai, Silicon-on-Insulator Technology and Devices XII, Ed. G.K. Celler, Electrochemical Society Proceedings 2005-03, The Electrochemical Society, Inc., Pennington NJ, 2005, pg. 225.

  321. “Cold-Plasma Modification of Oxide Surfaces for Covalent Biomolecule Attachment” B. J. Larson, J.M. Helgren, S. O. Manolache, M. G. Lagally, and F. S. Denes, Biosensors and Bioelectronics 21, 796 (2005).

  322. "Photodetector Based on Network of Carbon Nanotubes on Decomposed SOI", H.-C. Yuan, B. Yang, J. M. Simmons, M. S. Marcus, Z.Q. Ma, M. A. Eriksson, and M. G. Lagally, Proc. SPIE 5971, 289-295 (2005).
  323. "Formation of Micro Tubes from Strained SiGe/Si Heterostructures", H. Qin, N. Shaji, N. E. Merrill, H. S. Kim, R. C. Toonen, R. H. Blick, M.M. Roberts, D. E. Savage, M. G. Lagally, and G. Celler, New J. of Physics 7, 241 (2005).
  324. "Self-Organization of Semiconductor Nanocrystals by Selective Surface Faceting", B. Yang, P.P. Zhang, D.E. Savage, M.G. Lagally, G.-H. Lu, M.-H. Huang, and Feng Liu, Phys. Rev. B 72, 235413 (2005).
  325. "Nanomechanical Architecture of Strained Bilayer Thin Films: From Design Principles to Experimental Fabrication", Minghuang Huang, C. Boone, M. Roberts, D. E. Savage, M. G. Lagally, N. Shaji, H. Qin, R. Blick, J. A. Nairn, and Feng Liu, Adv. Mater. 17, 2860 (2005).
  326. "Silicon-Based Nanomembrane Materials: The Ultimate in Strain Engineering", Hao-Chih Yuan, M. M. Roberts, P.P. Zhang, B.-N. Park, L. J. Klein, D. E. Savage, F. S. Flack, Z.Q. Ma, P. G. Evans, M. A. Eriksson, G. K. Celler, and M. G. Lagally, Digest of Papers, 2006 Topical Meeting on Si Monolithic Integrated Circuits in RF Systems (SiRF06), ed. R. Drayton, IEEE, Piscataway, NJ (2006).
  327. "Electronic Transport in Nanometre-Scale Silicon-on-Insulator Membranes", P. P. Zhang, Emma Tevaarwerk, B.-N. Park, D. E. Savage, G. Celler, I. Knezevic, P.G. Evans, M. A. Eriksson, and M. G. Lagally, Nature 439, 703 (2006).
  328. "Elastically Relaxed Free-Standing Strained-Si Nanomembranes", M.M. Roberts, L.J. Klein, D.E. Savage, M. Friesen, G. K. Celler, M.A. Eriksson, and M.G. Lagally, Nature Materials 5, 388 (2006).
  329. "Fabrication and Transistor Demonstration on Si-based Nanomembranes", H.-C. Yuan, M. M. Roberts, D. E. Savage, M. G. Lagally, Z. Ma, and G. K. Celler, in Technical Proceedings of the 2006 Nanotechnology Conference and Trade Show, Vol. 1, p. 68, NSTI, Danville, CA (2006).
  330. "High-Speed Strained-Single-Crystal Silicon Thin-Film Transistors on Flexible Polymers", H.C. Yuan, Z.Q. Ma, M. M. Roberts, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 100, 013708 (2006).
  331. "Electrical Conductivity in Silicon Nanomembranes", P.P. Zhang, E. P. Nordberg, B.-N. Park, G. K. Celler, I. Knezevic, P.G. Evans, M. A. Eriksson, and M. G. Lagally, New Journal of Physics 8, 200 (2006).
  332. "Scanning Tunnelling Microscopy of Ultra-thin Silicon-on-Insulator", P. P. Zhang, E. Tevaarwerk, B. N. Park, D. E. Savage, G. Celler, I. Knezevic, P. G. Evans, M. A. Eriksson, and M. G. Lagally, Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, M. Saraniti and U. Ravaioli, eds., Chicago, IL USA, July 25-19, 2005, pp. 341, Springer Proceedings in Physics 110, 341 (2006).
  333. "Polymer Light Emitting Diodes and Poly(di-n-octylfluorene) Thin Films as Fabricated with a Microfuidics Applicator", H. Cheun, P. P. Rugheimer, B. J. Larson, P. Gopalan, M. G. Lagally, and M.J. Winokur, J. Appl. Phys. 100, 073510 (2006).
  334. "Double-Layer Based Electronic Nanodevices Fabricated on Silicon Nanoneedles", V.Joshkin, D. van der Weide, and M. Lagally, J. Appl. Phys. 100, 084329 (2006).
  335. "Nanomembranes: Just Around the Bend", M. G. Lagally, Advanced Substrate News, Winter 06-07, online http://www.advancedsubstratenews.com, December 2006.
  336. "Flexible thin-film transistors on biaxial- and uniaxial-strained Si and SiGe membranes", H.-C. Yuan, G .Wang, Z. Ma, M. M. Roberts, D. E. Savage, and M. G. La-gally, Semicond. Sci. Technol. 22, S72–S75 (2007); published online 30 November 2006 at stacks.iop.org/SST/22/S72.
  337. "Threshold-Voltage Instability of Single-Crystal Si Thin-Film Transistors Fabricated on Plastic Substrates", H.C. Yuan, Z. Ma, M.G. Lagally, and G.K. Celler, ECS Transactions 3, 81 (2006).
  338. "Silicon Nanomembranes", M.G. Lagally, MRS Bulletin, (invited) January 2007
  339. "Strain Engineered Silicon Nanomembranes", M.G. Lagally, J. of Physics, Conference Series (JPCS) (invited) in press
  340. "Elastically Strain Sharing Nanomembranes: Flexible and Transferable Strained Silicon and Silicon-Germanium Alloys", S. A. Scott and M. G. Lagally, J. Phys. D. (invited) in press.
  341. "Routes Toward Lateral Self-Organization of Quantum Dots: The Model System SiGe on Si(001)", Chr. Teichert and M.G. Lagally, Ch.2 in Lateral Alignment of Epitaxial Quantum Dots, ed. Oliver G. Schmidt, Springer Series on Nanoscience and Technology May 2007.
  342. "Directed Self-Assembly of Quantum Dots by Local Chemical Potential Control via Strain Engineering on Patterned Substrates", M-H Huang, Feng Liu, and M. G. Lagally, in Lateral Alignment of Epitaxial Quantum Dots, ed. Oliver G. Schmidt, Springer Series on Nanoscience and Technology May 2007.

 

  WB01343_.gif (599 bytes)   Back to M. Lagally

 

 
 
Home | Personnel | Facilities | Research | Publications | Image Archives | Links

Last Updated: April 4, 2007