Lagally Group Publications List

 

"Flexible Photodetectors on Plastic Substrates by Use of Printing Transferred Single-Crystal Germanium Membranes", H.-C.Yuan, J.Y. Shin, G.X. Qin, L. Sun, P. Bhattacharya, M.G. Lagally, G.K. Celler, and Z.Q.Ma, Appl. Phy. Letters, in press .

"Phonon Transport and Thermoelectricity in Silicon Nanostructures", H-J. Ryu, C. S. Ritz, L. J. Klein, H. F. Hamann, M. G. Lagally, and M. A. Eriksson, ECS Proceedings 16, 983 (2008).

"Silicon Nanomembranes Incorporating Strain and Mixed Crystal Orientations", S.A. Scott, D.M. Cottrill, D.E. Savage, and M.G. Lagally, ECS Proceedings 16, 215 (2008).

"Influence of Strain on Band Structure in Strained Silicon Nanomembranes", C. Euaruk-sakul, Z. W. Li, F. Zheng, F. J. Himpsel, C. S. Ritz, B. Tanto, D. E. Savage, X. S. Liu, and M. G. Lagally, Phys. Rev. Letters 101, 147403 (2008).

"Plasma-enhanced synthesis of thin fluoropolymer layers with low Raman and fluores-cence backgrounds", Hongquan Jiang, M. K. Jantan, S. Manolache, F. S. Denes, and M. G. Lagally, Langmuir 24, 8672-8677 (2008).

"Photopatternable Substrate-independent Poly (glycidyl methacrylate-ran-2-(acryloyloxy) ethyl 2-methylacrylate) Polymer Films for Immobilization of Bio-molecules", S.Cullen, SK Ha, M. G. Lagally, and P. Gopalan, J. Polymer Sci. A: Poly-mer Chemistry 46, 5826 (2008).

"Spin Blockade and Coherence Enhanced Transport in a Few-Electron Si/SiGe Double Quantum Dot", N. Shaji, C. B. Simmons, M. Thalakulam, L. J. Klein, H. Qin, H. Luo, D. E. Savage, M. G. Lagally, A. J. Rimberg, R. Joynt, M. Friesen, R. H. Blick, S. N. Cop-persmith, and M. A. Eriksson, Nature Physics 4, 540 (2008).

"Electronically Driven Structure Changes of Silicon Captured by Femtosecond Electron Diffraction", M. Harb, R. Ernstorfer, Ch. T. Hebeisen, G. Sciaini, Weina Peng, Th. Dartigalongue, M.A. Eriksson , M.G. Lagally, S.G. Kruglik, and R.J.D. Miller, Phys. Rev. Letters 100, 155504 (2008).

"Top-Gated Few-Electron Double Quantum Dot in Si/SiGe", N. Shaji, C.B. Simmons, L.J. Klein, H. Qin, D.E. Savage, M.G. Lagally, S.N. Coppersmith, R. Joynt, M. Friesen, R.H. Blick, and M.A. Eriksson, Physica E: Low-Dimensional Systems & Nanostructures 40, 520 (2008).

"Thermally Processed High-Mobility MOS Thin-Film Transistors on Transferable Single-Crystal Elastically Strain-Sharing Si/SiGe/Si Nanomembranes", H-C. Yuan, M.M. Roberts, D.E. Savage, M.G. Lagally, G.K. Celler, and Z.Q. Ma, IEEE Transactions on Electron Devices 55, 810 (2008).

"Single-Electron Quantum Dot in Si/SiGe with Integrated Charge Measurement", C.B. Simmons, M. Thalakulam, N. Shaji, L.J. Klein, Hua Qin, R.H. Blick, D.E. Savage, M.G. Lagally, S.N. Coppersmith, and M.A. Eriksson, Appl. Phys. Letters 91, 213103 (2007).

"Directed Self-Assembly of Quantum Dots by Local Chemical Potential Control via Strain Engineering on Patterned Substrates", M-H Huang, Feng Liu, and M.G. Lagally, in Lateral Alignment of Epitaxial Quantum Dots, ed. Oliver G. Schmidt, Springer Series on Nanoscience and Technology 2007.

"Routes Toward Lateral Self-Organization of Quantum Dots: The Model System SiGe on Si(001)", Ch. Teichert and M.G. Lagally, Ch.2 in Lateral Alignment of Epitaxial Quantum Dots, ed. Oliver G. Schmidt, Springer Series on Nanoscience and Technology 2007.

"Structure of Elastically Strain-Shared Silicon (110) Nanomembranes", A. Opotowsky, S.A. Scott, D.E. Savage, and M.G. Lagally, New J. of Physics 9, 270 (2007).

"Silicon-on-Insulator for Symmetry-Converted Growth", Y. Fujikawa, Y. Yamada-Takamura, G. Yoshikawa, T. Ono, M. Esashi, P.P. Zhang, M.G. Lagally, and T. Sakurai, Appl. Phys. Letters 90, 243107 (2007).

"Ordered Lattices of Quantum Dots on Ultrathin SOI Nanomembranes", C.S. Ritz, F.S. Flack, D.E. Savage, D. Detert, P.G. Evans, M.G. Lagally, and Z.H. Cai, ECS Trans. 6, 321 (2007).

"X-ray Absorption Spectroscopy of Strained-Si Nanomembranes", C. Euaruksakul, Z. Li, D.E. Savage, and M.G. Lagally, ECS Trans. 6, 257 (2007).

"Complementary Single-Crystal Silicon TFTs on Plastic", H.-C. Yuan, Z.Q. Ma, C.S. Ritz, D.E. Savage, M.G. Lagally, and G.K. Celler, ECS Trans. 6, 139 (2007).

"Single-Crystal/Amorphous Multilayer Heterostructures Based on Membrane Transfer", Weina Peng, M.M. Roberts, E.P. Nordberg, F.S. Flack, P.E. Colavita, R.J. Hamers, D.E. Savage, M.G. Lagally, and M.A. Eriksson, Appl. Phys. Letters 90, 183107 (2007) .

"Strain Engineered Silicon Nanomembranes", M.G. Lagally, J. of Physics, Conference Series (JPCS) 61, 652 (2007). (invited)

"Elastically Strain Sharing Nanomembranes: Flexible and Transferable Strained Silicon and Silicon-Germanium Alloys", S.A. Scott and M.G. Lagally, J. Phys. D. (Applied Physics) 40, R1 (2007) (invited)

"Silicon Nanomembranes", M.G. Lagally, MRS Bulletin 32, 57 (2007). (invited)

"Flexible Thin-Film Transistors on Biaxial- and Uniaxial-Strained Si and SiGe Membranes", H.-C. Yuan, G. Wang, Z.Q. Ma, M.M. Roberts, D.E. Savage, and M.G. Lagally, Semicond. Sci. Technol. 22, S72-S75 (2007).

"Double-Layer Based Electronic Nanodevices Fabricated on Silicon Nanoneedles", V.Joshkin, D. van der Weide, and M.G. Lagally, J. Appl. Phys. 100, 084329 (2006).

"Polymer Light Emitting Diodes and Poly(di-n-octylfluorene) Thin Films as Fabricated with a Microfuidics Applicator", H. Cheun, P.P. Rugheimer, B.J. Larson, P. Gopalan, M.G. Lagally, and M.J. Winokur, J. Appl. Phys. 100, 073510 (2006).

"Electrical Conductivity in Silicon Nanomembranes", P.P. Zhang, E.P. Nordberg, B.-N. Park, G.K. Celler, I. Knezevic, P.G. Evans, M.A. Eriksson and M.G. Lagally, New Journal of Physics 8, 200 (2006).

"High-Speed Strained-Single-Crystal Silicon Thin-Film Transistors on Flexible Polymers", H.C.Yuan, Z.Q. Ma, M.M. Roberts, D.E. Savage, and M.G. Lagally, J. Appl. Phys. 100, 013708 (2006).

"Charge transfer in the atomic structure of Ge (105)", Y. Fujikawa Y, T. Sakurai, and M.G. Lagally, Appl. Surface Sci. 252, 5244 (2006).

"Elastically Relaxed Free-Standing Strained-Si Nanomembranes", M.M. Roberts, L.J. Klein, D.E. Savage, M. Friesen, G.K. Celler, M.A. Eriksson, and M.G. Lagally, Nature Materials 5, 388 (2006).

"Electronic Transport in Nanometre-Scale Silicon-on-Insulator Membranes", P. P. Zhang, E. Tevaarwerk, B.-N. Park, D.E. Savage, G.K. Celler, I. Knezevic, P.G. Evans, M.A. Eriksson, and M.G. Lagally, Nature 439, 703 (2006).

"Quantifying the thickness of magnetically active layers using x-ray resonant magnetic scattering", B. M. Barnes, Z. Li, D. E. Savage, E. Wiedemann, and M. G. Lagally, J. Appl. Phys. 95, 6654 (2004).

"Computation with DNA on Surfaces", S. D. Gillmor, P. Rugheimer, and M. G. Lagally, Surface Science 500, 699 (2002).

"Thin-Film Cliffhanger", M. G. Lagally, and Z. Y. Zhang, Nature 417, 907 (2002).

"Electrically Isolated SiGe Quantum Dots", E. Tevaarwerk, P. Rugheimer, O. M. Castellini, D. G. Keppel, S. T. Utley, D. E. Savage, M. G. Lagally, and M. A. Eriksson, Appl. Phys. Letters 80, 4626 (2002).

"Comparison of Magnetic- and Chemical-Boundary Roughness in Magnetic Films and Multilayers", J. J. Kelly IV, B. M. Barnes, F. Flack, D. P. Lagally, D. E. Savage, M. Friesen, and M. G. Lagally, J. Appl. Phys. 91, 9978 (2002).

"Origin of the Stability of Ge(105) on Si - a New Structure Model and Surface Strain Relaxation", Y. Fujikawa, K. Akiyama, T. Nagao, T. Sakurai, M. G. Lagally, T. Hashimoto, Y. Morikawa, and K. Terakura, Phys. Rev. Letters 88, 176101 (2002).

"Low-Contact-Angle Polydimethyl Siloxane (PDMS) Membranes for Fabricating Micro-Bioarrays", S. D. Gillmor, B. J. Larson, J. M. Braun, C. E. Mason, L. E. Cruz-Barba, F. Denes, and M. G. Lagally, in Proceedings of the 2nd Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology, ed. A. Dittmar, IEEE Engineering in Medicine and Biology Society (2002), pg. 51.

"Response of a Strained Semiconductor Structure", F. Liu, P. Rugheimer, E. Mateeva, D. E. Savage, and M. G. Lagally, Nature 416, 498 (2002).

"Comparison of Wear Characteristics of Etched-Silicon and Carbon Nanotube Atomic-Force Microscopy Probes", T. Larsen, K. Moloni, F. Flack, M. A. Eriksson, M. G. Lagally, and C. T. Black, Appl. Phys. Letters 80, 1996 (2002).

"One-Dimensional Ordering of Self-assembled Ge Dots on Photolithographically Patterned Structures on Si (001)", B. Yang, A. R. Woll, P. Rugheimer, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. Vol. 715, A8.5 (2002).

"Strain Relaxation in SiGe Thin Films Studied by Low-Energy Electron Microscopy", A. R. Woll, P. Moran, E. M. Rehder, B. Yang, T. F. Kuech, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. Vol. 696, N4.2 (2002).

"Surface and interface roughness in magnetic thin films: A comparison using carbon-nanotube atomic force microscopy and soft-x-ray scattering", B. M. Barnes, F. Flack, J. J. Kelly IV, D. P. Lagally, D. E. Savage, and M. G. Lagally, Proc. SPIE 4780, 61-71 (2002).

"Strain Engineering, Self-Assembly, and Nanoarchitectures in Thin SiGe films on Si", A. R. Woll, P. Rugheimer, and M. G. Lagally, Materials Science and Engineering B96, (2002).

"Step-Induced Magnetic Hysteresis Anisotropy in Ferromagnetic Thin Films", D. Zhao, F. Liu, D. L. Huber, and M. G. Lagally, J. Appl. Phys. 91, 3150 (2002).

"Surface-Stress-Induced Island Shape Transition in Si(001) Homoepitaxy", V. Zielasek, F. Liu, and M. G. Lagally, Phys. Rev. B64, 201320 (2001).

"Island-Corner Barrier Effect in Two-Dimensional Pattern Formation at Surfaces", T. Zhang, J. Zhong, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. B63, 113403 (2001).

"Flexural-Hinge Positioner for Precision Machining: Finite-Element Simulation", A. A. Elmustafa, and M. G. Lagally, Precision Engineering 25, 77 (2001).

"Self-assembly of Two-Dimensional Islands Via Strain-Mediated Coarsening", F. Liu, A. H. Li, and M. G. Lagally, Phys. Rev. Letters 87, 126103 (2001).

"Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(001) at Submonoloayer Ge Coverages", X. R. Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Letters 84, 4645 (2000).

"Thermal roughening of a thin film: a new type of roughening transition", J. B. Maxson, D. E. Savage, F. Liu, R. M. Tromp, M. C. Reuter, and M. G. Lagally, Physics Review Letters 85, 2152-5 (2000).

"Correlations among Sputter Pressure, Thickness, and Coercivity in Al/Co/Cu Magnetic Thin Films Sputter-Deposited on Si(001)", B. M. Barnes, J. J. Kelly IV, J. F. MacKay, W. L. O'Brien, and M. G. Lagally, IEEE Trans. Magn. 36, 2948 (2000).

"Sharpened Carbon Nanotube Probes", K. Moloni, A. Lal, and M. G. Lagally, in Optical Devices and Diagnostics in Materials Science, Proceedings of SPIE, Vol. 4098, ed. D. L. Andrews, (2000).

"Unique Dynamic Appearance of a Ge-Si Ad-Dimer on Si(001)", Z. Y. Lu, F. Liu, C. Z. Wang, X. R. Qin, B. S. Swartzentruber, M. G. Lagally, and K. M. Ho, Phys. Rev. Letters 85, 5603 (2000).

"Novel dark-field imaging of GaN{0001} surfaces with low-energy electron microscopy", J. B. Maxson, N. Perkins, D. E. Savage, A. R. Woll, L. Zhang, T. F. Kuech, and M. G. Lagally, Surface science 464, 217-22 (2000).

"Magnetization on Rough Ferromagnetic Surfaces", D. Zhao, F. Liu, D. L. Huber, and M. G. Lagally, Phys. Rev. B62, 11316 (2000).

"Hydrophilic/hydrophobic patterned surfaces as templates for DNA arrays", S. D. Gillmor, A. J. Thiel, T. C. Strother, L. M. Smith, and M. G. Lagally, Langmuir 16, 7223 (2000).

"Quantitative Determination of Dislocation-Induced Strain at the Surface of (001) Silicon-on-Insulator", P. Sutter, and M. G. Lagally, Phys. Rev. Letters 82, 1490 (1999).

"Properties of Si1-xGex Three-Dimensional Islands,", E. Mateeva, H. Evans, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. A17, 2345 (1999).

"Spontaneous Self-Embedding of Three-Dimensional SiGe Islands", E. Mateeva, P. Sutter, and M. G. Lagally, Appl. Phys. Letters 74, 567 (1999).

"Step Contributions to the Reflectance Difference Spectrum from Si(001)", S. G. Jaloviar, J. L. Lin, V. Zielasek, L. McCaughan, and M. G. Lagally, Phys. Rev. Letters 82, 791 (1999).

"Self-Organized Replication of Three-Dimensional-Coherent-Island Size and Shape in Multilayer Heteroepitaxial Films", F. Liu, S. E. Davenport, H. Evans, and M. G. Lagally, Phys. Rev. Letters 82, 2528 (1999).

"Self-Organized Growth of Alloy Superlattices", P. Venezuela, J. Tersoff, J. A. Floro, E. Chason, D. M Follstaedt, F. Liu, and M. G. Lagally, Nature 397, 678 (1999).

"Mechanisms Determining Three-Dimensional SiGe Island Density on Si(001)", J. S. Sullivan, H. Evans, D. E. Savage, M. R. Wilson, and M. G. Lagally, J. Elect. Mat. 28, 426 (1999).

"Surface-based DNA computing operations: DESTROY and READOUT", L. M. Wang, Q. Liu, A. G. Frutos, S. D. Gillmor, A. J. Thiel, T. C. Strother, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, Biosystems 52, 189 (1999).

"View of the Empty States of the Si(100)-2x1 Surface Via Scanning Tunneling Microscopy Imaging at Very Low Biases", X. R. Qin, and M. G. Lagally, Phys. Rev. B59, 7293 (1999).

"Progress toward demonstration of a surface based DNA computation: a one word approach to solve a model satisfiability problem", Q. Liu, A. G. Frutos, L. M. Wang, A. J. Thiel, S. D. Gillmor, T. C. Strother, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, Biosystems 52, 25 (1999).

"Self-organized Island Arrays in SiGe/Si Multilayers", C. Teichert, J. Tersoff, and M. G. Lagally, in Morphological Organization in Epitaxial Growth and Removal, ed. Z. Y. Zhang, World Scientific, Singapore (1999).

"Fundamental Mechanisms of Film Growth", D. E. Savage, F. Liu, V. Zielasek, and M. G. Lagally, in Semiconductors and Semimetals, Vol. 56 – Germanium Silicon, ed. J. Bean, Academic Press, Boston (1999), pg. 49.

"Hydrogen-Induced Si Segregation on Ge Covered Si(001)", E. Rudkevich, F. Liu, D. E. Savage, L. McCaughan, T. F. Kuech, and M. G. Lagally, Phys. Rev. Letters 81, 3467 (1998).

"Self-Organization of Steps in Growth of Strained Films on Vicinal Surfaces", F. Liu, J. Tersoff, and M. G. Lagally, Phys. Rev. Letters 80, 1268 (1998).

"Partial Volume Irradiation: In-Situ Visualization of Double-Strand Break Repair in Human Fibroplasts", B. E. Nelms, R. S. Maser, J. F. MacKay, M. G. Lagally, and J. H. J. Petrini, Science 280, 590 (1998).

"A Monochromator Based on W/C Multilayers of 40Å Layer Spacing", A. Smith, C. Riedel, B. Edwards, D. E. Savage, B. Lai, A. Ray-Chaudhuri, F. Cerrina, M. G. Lagally, J. H. Underwood, and C. Falco, SPIE Proceedings 983, 185 (1998).(Thin-Film Neutron Optical Devi)

"Self-Organized Quantum Dots", M. G. Lagally, J. Chem. Ed. 75, 277 (1998).

"A Double-Mirror W/C Multilayer Monochromator for Radiation Biology Applications", J. F. MacKay, D. W. Pearson, B. E. Nelms, P. M. DeLuca Jr., M. N. Gould, and M. G. Lagally, Medical Physics 25, 773 (1998).

"Si Growth on Partially Relaxed Ge Islands", P. Sutter, E. Mateeva, and M. G. Lagally, J.Vac. Sci. Technol. B16, 1560 (1998).

"A Surface-Based Approach to DNA Computation", L. M. Smith, R. M. Corn, A. E. Condon, M. G. Lagally, A. G. Frutos, Q. Liu, and A. J. Thiel, J. Comp. Biology 5, 255 (1998).

"Local Modification of Surface Structure by Adsorbate-Induced Strain: Ge on Si(001)", X. R. Qin, F. Liu, and M. G. Lagally, Phys. Rev. Letters 81, 2288 (1998).

"Embedding of 3D Nanoscale SiGe Islands in a Si Matrix", P. Sutter, and M. G. Lagally, Phys. Rev. Letters 81, 3471 (1998).

"Strain-Induced Self-Organization of Steps and Islands in SiGe/Si Multilayer Films", Q. Liu, and M. G. Lagally, Metallurgical and Materials Tr 29A, 2111 (1998).(invited review)

"Self-organized Nanoscale Structures in Si1-xGex/Si Films", C. Teichert, J. C. Bean, and M. G. Lagally, Appl. Phys. A67, 675 (1998).

"Low-Energy Electron Microscopy of Nanoscale Three-Dimensional Islands on Si(001)", P. Sutter, E. Mateeva, J. S. Sullivan, and M. G. Lagally, Thin Solid Films 336, 262 (1998).

"A Surface-Based Approach to DNA Computation", Q. Liu, Z. Guo, Z. D. Fei, A. E. Condon, R. M. Corn, M. G. Lagally, and L. M. Smith, in DNA Based Computers II, ed. L. F. Landweber, DIMACS: Series in Discrete Mathematics and Theoretical Computer Science, American Mathematical Society (1998), pg. 123.

"Antimony Cluster Manipulation on the Si(001) Surface by Means of STM", I. I. Kravchenko, C. T. Salling, and M. G. Lagally, MRS Proceedings 448, 205 (1997).

"Extended-Spectral-Range FTIR-ATR Spectroscopy on Si Surfaces Using a Novel Si-Coated Ge ATR Prism", E. Rudkevich, D. E. Savage, W. Cai, J. C. Bean, J. S. Sullivan, S. Nayak, T. F. Kuech, L. McCaughan, and M. G. Lagally, J.Vac. Sci. Technol. A15, 2153 (1997).

"Effect of Strain on Structure and Morphology of Ultrathin Ge Films on Si(001)", F. Liu, and M. G. Lagally, Chemical Reviews 97, 1045 (1997).

"An Atomistic View of Si(001) Homoepitaxy", Z. Y. Zhang, F. Wu, and M. G. Lagally, Annual Reviews of Materials Sc 27, 525 (1997).

"Atomistic Processes in the Early Stages of Thin-Film Growth", Z. Y. Zhang, and M. G. Lagally, Science 276, 377 (1997).

"The Power of Surface-based DNA Computation", W. Cai, A. E. Condon, R. M. Corn, E. Glaser, Z. D. Fei, A. G. Frutos, Z. Guo, M. G. Lagally, Q. Liu, L. M. Smith, and A. J. Thiel, in Proceedings of the First Annual International Conference on Computational Molecular Biology (Recomb97), ed. . , ACM (1997), pg. 67.(extended abstract)

"Adatom Pairing Structures for Ge on Si(001): The Initial Stage of Island Formation", X. R. Qin, and M. G. Lagally, Science 278, 1444 (1997).

"Mechanism of Organization of Three-Dimensional Islands in SiGe/Si Multilayers", E. Mateeva, P. Sutter, J. C. Bean, and M. G. Lagally, Appl. Phys. Letters 71, 3233 (1997).

"Magnetization on Vicinal Ferromagnetic Surfaces", D. Zhao, F. Liu, D. L. Huber, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. 475, 519 (1997).

"Epitaxial Growth of Si on Si(001)", F. Liu, and M. G. Lagally, in The Chemical Physics of Surfaces, Vol. 8, ed. D. A. King, Elsevier (1997), pg. 258.(invited review)

"Self-Organized Nanoscale Structures in Si/Ge Films", F. Liu, and M. G. Lagally, Surface Science 386, 169 (1997).

"Self-Organized Nanoscale Structures in Si/Ge Films", F. Liu, and M. G. Lagally, in Proceedings of the 10th Toyota Conference, on "Atomic, Molecular, and Electronic Dynamic Processes on Solid Surfaces", ed. M. Aono, (1997).

"Stress-Driven Morphological Changes of SiGe Films and SiGe/Si Multilayers Grown on Vicinal Si(001)", C. Teichert, Y. H. Phang, L. J. Peticolas, J. C. Bean, and M. G. Lagally, in Surface Diffusion: Atomistic and Collective Processes, ed. M. C. Tringides, Plenum Press, New York (1997), pg. 297.

"Stress-Induced Self-Organization of Nanoscale Structures in SiGe/Si Multilayer Films", C. Teichert, L. J. Peticolas, J. C. Bean, J. Tersoff, and M. G. Lagally, Phys. Rev. B53, 334 (1996).

"Direct Determination of the Interaction Between Vacancies on InP(110) Surfaces", P. Ebert, X. Chen, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys. Rev. Letters 76, 2089 (1996).

"Stress-Driven Self-Organization of Quantum Dot Arrays", J. Tersoff, C. Teichert, and M. G. Lagally, Phys. Rev. Letters 76, 1675 (1996).

"Scanning Tunneling Microscopy and Tunneling Luminescence of the Surface of GaN Films Grown by Vapor Phase Epitaxy", B. Garni, J. Ma, N. Perkins, J. Liu, T. F. Kuech, and M. G. Lagally, Appl. Phys. Letters 68, 1380 (1996).

"Influence of Oxygen on Surface Morphology of MOVPE-Grown GaAs", S. Nayak, J. W. Huang, J. M. Redwing, D. E. Savage, M. G. Lagally, and T. F. Kuech, Appl. Phys. Letters 68, 1270 (1996).

"Kinetics and Dynamics of Defects on Si(001)", Z. Y. Zhang, F. Wu, and M. G. Lagally, Surface Rev. Lett. 3, 1449 (1996).

"A Comparative Study of the Reflectance Difference Spectrum from Si(001) Using Reflectance Difference Spectroscopy/ Low-Energy Electron Diffraction/Scanning Tunneling Microscopy", J. L. Lin, S. G. Jaloviar, L. Mantese, D. E. Aspnes, L. McCaughan, and M. G. Lagally, MRS Proceedings 406, 401 (1996).

"Interplay of Stress, Structure, and Stoichiometry in Ge-Covered Si(001)", F. Liu, and M. G. Lagally, Phys. Rev. Letters 76, 3156 (1996).

"Photoemission Spectroscopy Studies of the Surface of GaN Films Grown by Vapor Phase Epitaxy", J. Ma, B. Garni, N. Perkins, W. L. O'Brien, T. F. Kuech, and M. G. Lagally, Appl. Phys. Letters 69, 3351 (1996).

"Unique Edge Structure and Stability of Fabricated Dimer Islands on Si(001)", F. Liu, C. T. Salling, and M. G. Lagally, Surface Science 370, 0 (1996).

"Element Specific Magnetization of Buried Interfaces Probed by Diffuse X-Ray Resonant Magnetic Scattering", J. F. MacKay, C. Teichert, and M. G. Lagally, Phys. Rev. Letters 77, 3925 (1996).

"Transmission Maps of the ACIS UV/Optical Blocking Filters", L. K. Townsley, F. R. Powell, J. F. MacKay, M. G. Lagally, J. A. Nousek, and G. G. Garmire, Proc. SPIE 2805, 134 (1996).

"Energetics and Dynamics of Si Ad-Dimers on Si(001)", Z. Y. Zhang, F. Wu, H. J. W. Zandvliet, B. Poelsema, H. Metiu, and M. G. Lagally, Phys. Rev. Letters 74, 3644 (1995).

"Formation of Anion Vacancies by Langmuir Evaporation from InP and GaAs(110) Surfaces at Low Temperatures", P. Ebert, M. Heinrich, M. Simon, K. Urban, and M. G. Lagally, Phys Rev. B51, 9696 (1995).

"Reversal of Step Roughness on Ge-Covered Vicinal Si(001)", F. Wu, X. Chen, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 74, 574 (1995).

"Comparison of Surface Roughness of Polished Si Wafers Measured by Light Scattering Topography, Soft-X-Ray Scattering, and Atomic-Force Microscopy", C. Teichert, J. F. MacKay, D. E. Savage, M. G. Lagally, M. Brohl, and P. Wagner, Appl. Phys. Lett. 66, 2346 (1995).

"Effects of Hydrogen Impurities on the Diffusion, Nucleation, and Growth of Si on Si(001)", J. E. Vasek, Z. Y. Zhang, C. T. Salling, and M. G. Lagally, Phys. Rev. B51, 17207 (1995).

"Temperature Dependent Vacancy Concentrations on InP(110) Surfaces", M. Heinrich, P. Ebert, M. Simon, K. Urban, and M. G. Lagally, J. Vac. Sci. Technol. A15, 1714 (1995).

"Ge-Induced Reversal of Surface Stress Anisotropy on Si(001)", F. Wu, and M. G. Lagally, Phys. Rev. Letters 75, 2534 (1995).

"Step Bunching Instability of Vicinal Surfaces Under Stress", J. Tersoff, Y. H. Phang, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 75, 2730 (1995).

"Atomic Manipulation for Patterning Ultrathin Films", C. T. Salling, I. I. Kravchenko, and M. G. Lagally, J. Vac. Sci. Technol. B13, 2828 (1995).

"In-situ RHEED and AFM Investigation of Growth Front Morphology Evolution of Si(001) Grown by UHV-CVD", S. Nayak, D. E. Savage, H. N. Chu, M. G. Lagally, and T. F. Kuech, J. Cryst. Growth 157, 168 (1995).

"Point Defects on Si(001): A Comparative Study", Z. Y. Zhang, F. Wu, and M. G. Lagally, in High-Performance Computing Symposium 1995: Grand Challenges in Computer Simulation, Proceedings of the 1995 Simulation Multiconference, ed. A. Tentner, The Society for Computer Simulation, San Diego, CA (1995), pg. 222.(invited review)

"Fabrication of Atomic-Scale Structures on Si(001) Surfaces", C. T. Salling, and M. G. Lagally, Science 265, 502 (1994).

"Universal Size Relation in Long-Range-Ordered Structures", P. Zeppenfeld, M. Krysowski, C. Romainczyk, G. Comsa, and M. G. Lagally, Phys. Rev. Letters 72, 2737 (1994).

"Film Stress of Sputtered W/C Multilayers and Strain Relaxation Upon Annealing", J. F. Geisz, T. F. Kuech, M. G. Lagally, F. Cardone, and R. M. Potenski, J. Appl. Phys. 75, 1530 (1994).

"Direct Observation of Charge-Dependent Relaxations of Anion Vacancies in III-P(110) Semiconductor Surfaces by STM", P. Ebert, K. Urban, and M. G. Lagally, Phys. Rev. Letters 72, 840 (1994).

"Atomic-Scale Mechanisms for Surfactant Mediated Layer-by-Layer Growth in Homoepitaxy", Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 72, 693 (1994).

"Vacancy-Vacancy Interaction on Ge-covered Si(001)", X. Chen, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 73, 850 (1994).

"Determining the Vertical Correlation of Interfacial Roughness in Multilayer Films Using X-ray Scattering", Y. H. Phang, D. E. Savage, Z. Y. Zhang, and M. G. Lagally, in Physics of X-Ray Multilayer St, ed. . , Optical Society of America, Wa (1994).

"Bonding Geometry Dependence of Fractal Growth on Metal Surfaces", Z. Y. Zhang, X. Chen, and M. G. Lagally, Phys. Rev. Letters 73, 1829 (1994).

"Correlated Interfacial Roughness Anisotropy in Si1-xGex/Si Superlattices", Y. H. Phang, C. Teichert, M. G. Lagally, L. Peticolas, J. C. Bean, and E. Kasper, Phys. Rev. B50, 435 (1994).

"The Influence of Controlled Impurity Incorporation on Surface and Interfacial Roughness in GaAs/AlxGa1-xAs Structures Grown by MOVPE", J. M. Redwing, S. Nayak, D. E. Savage, M. G. Lagally, and T. F. Kuech, J. Crystal Growth 145, 792 (1994).

"Response of Calcium Fluoride to 275-2550 eV Photons", R. E. Carrillo, D. W. Pearson, P. M. DeLuca, J. F. MacKay, and M. G. Lagally, Phys. Med. Biol. 39, 1875 (1994).

"Strain Relaxation and Oxide Formation on Annealed W/C Multilayers", J. F. Geisz, Y. H. Phang, T. F. Kuech, M. G. Lagally, F. Cardone, and R. M. Potenski, Mat. Res. Soc. Proceedings 318, 225 (1994).

"Influence of Impurities on Mechanisms of Growth in Metal Organic Vapor Phase Epitaxy GaAs(001) Studies by AFM", S. Nayak, J. M. Redwing, J. W. Huang, M. G. Lagally, and T. F. Kuech, MRS Proceedings 367, 293 (1994).

"Atomic Point Defects on III-P(110) Semiconductor Surfaces Observed by STM", P. Ebert, M. G. Lagally, and K. Urban, in Formation of Semiconductor Interfaces (Proceedings of the 4th ICFSI), ed. B. Lengeler, World Scientific, Singapore (1994).

"Variable-Temperature STM Measurements of Step Kinetics on Si(001)", N. Kitamura, B. S. Swartzentruber, M. G. Lagally, and M. B. Webb, Phys. Rev. Rapid Comm. B48, 5704 (1993).

"X-Ray Diffraction Measurement of Partially Correlated Interfacial Roughness in Multilayers", Y. H. Phang, R. Kariotis, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 74, 3181 (1993).

"The Behavior of Steps on Si(001) as a Function of Vicinality", B. S. Swartzentruber, N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. B 47, 13432 (1993).

"Scanning-Tunneling-Microscope Tip-Induced Migration of Vacancies on GaP(110)", P. Ebert, M. G. Lagally, and K. Urban, Phys. Rev. Letters 70, 1437 (1993).

"Step and Kink Energetics on GaAs(001)", E. J. Heller, Z. Y. Zhang, and M. G. Lagally, Phys. Rev. Letters 71, 743 (1993).

"Real-Time Observations of Vacancy Diffusion on Si(001)-(2x1) by Scanning Tunneling Microscopy", N. Kitamura, M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 71, 2082 (1993).

"X-Ray Diffraction Determination of Interface Roughness in GaAs/AlxGa1-xAs Multilayers", S. Nayak, J. M. Redwing, T. F. Kuech, Y. H. Phang, D. E. Savage, and M. G. Lagally, Mat. Res. Soc. Symp. Proceedin 312, 137 (1993).

"Determination of Interfacial Roughness Correlation in W/C Multilayer Films: Comparison Using Soft and Hard X-Ray Diffraction", Y. H. Phang, J. J. Rownd, J. F. MacKay, and M. G. Lagally, J. Appl. Phys. 74, 6158 (1993).

"Vacancy Diffusion on Si(001)-2x1", Z. Y. Zhang, H. Chen, B. C. Bolding, and M. G. Lagally, Phys. Rev. Letters 71, 3677 (1993).

"Roughening of Steps During Homoepitaxial Growth on Si(001)", F. Wu, S. G. Jaloviar, D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 71, 4190 (1993).

"An Atomic-Level View of Kinetic and Thermodynamic Influences in the Growth of Thin Films", M. G. Lagally, Jpn. J. Appl. Phys. 32, 1493 (1993).

"Temperature Dependence of the Step Structure of Vicinal Si(001) Surfaces", C. E. Aumann, J. J. de Miguel, and M. G. Lagally, Surface Sci. 275, 1 (1992).

"Response to Comment by Pimpinelli, Wolf, and Villain", Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 69, 986 (1992).

"Scanning Tunneling Microscopy Studies of the Initial Stages of Ge Growth on Si(001)", Y. W. Mo, and M. G. Lagally, Mat. Sci. and Engr. B14, 321 (1992).

"X-ray Diffraction Determination of Interfacial Roughness Correlations in SixGe1-x/Si and GaAs/AlxGa1-xAs Superlattices", Y. H. Phang, D. E. Savage, T. F. Kuech, M. G. Lagally, J. S. Park, and K. L. Wang, Appl. Phys. Letters 60, 2986 (1992).

"In-Situ Scanning Tunneling Microscopy Study of the Growth Front Morphology of GaAs(001) Grown by Molecular Beam Epitaxy", E. J. Heller, and M. G. Lagally, Appl. Phys. Letters 60, 2675 (1992).

"Interfacial Roughness Correlation in Multilayer Films: Influence of Total Film and Individual-Layer Thicknesses", D. E. Savage, N. Schimke, Y. H. Phang, and M. G. Lagally, J. Appl. Phys. 71, 1 (1992).

"Surface Self-Diffusion of Si on Si(001)", Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Surface Sci. 268, 275 (1992).

"Roughness Evolution in Films and Multilayer Structures", M. G. Lagally, Physics of X-ray Multilayer St 7, 78 (1992).

"Diffraction from Multilayer Structures with Partially Correlated Roughness", Y. H. Phang, R. Kariotis, D. E. Savage, and M. G. Lagally, J. Appl. Phys. 72, 4627 (1992).

"The Temperature Dependence of Diamond Film Morphology", H. N. Chu, A. R. Lefkow, E. A. den Hartog, L. W. Anderson, M. G. Lagally, and J. E. Lawler, Plasma Sources Sci. Technol. 1, 187 (1992).

"Scanning Tunneling Microscopy and X-ray Diffraction Studies of Growth and Interfacial Roughness", D. E. Savage, E. J. Heller, Y. H. Phang, M. Schacht, and M. G. Lagally, in urface Disordering: Growth, Roughening, and Phase Transitions, ed. R. Jullien, Nova Science Publishers, Inc., Commack, NY (1992).(invited)

"Scanning Tunneling Microscopy Investigation of Surface Morphology in the Growth of GaAs(100)", E. J. Heller, and M. G. Lagally, in Interface Dynamics and Growth, ed. K. S. Liang, Mat. Res. Soc. Symposium Proceedings 237 (1992), pg. 247.

"Experimental Determination of the Strain Potentials on Vicinal Si(001) Surfaces", J. J. deMiguel, C. E. Aumann, S. Jaloviar, R. Kariotis, and M. G. Lagally, Phys. Rev. B46, 10257 (1992).

"Modeling Two-Dimensional Diffraction Profiles for Disordered Vicinal Surfaces and Random Island Configurations", J. Kleiner, C. E. Aumann, Y. W. Mo, R. Kariotis, and M. G. Lagally, Surface Sci. 240, 293 (1991).

"Domain Boundary Control of Edge Roughness in Vicinal Si(001)", B. S. Swartzentruber, Y. W. Mo, and M. G. Lagally, Appl. Phys. Lett. 58, 822 (1991).

"Determination of Roughness Correlations in Multilayer Films for X-ray Mirrors", D. E. Savage, J. Kleiner, N. Schimke, Y. H. Phang, T. Jankowski, J. Jacobs, R. Kariotis, and M. G. Lagally, J. Appl. Phys. 69, 1411 (1991).

"Surface Step Configurations Under Strain: Kinetics and Step-Step Interactions", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, Surface Sci. 242, 23 (1991).

"Activation Energy for Surface Diffusion of Si on Si(001): A Scanning Tunneling Microscopy Study", Y. W. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 66, 1998 (1991).

"Anisotropy in Surface Migration of Si and Ge on Si(111)", Y. W. Mo, and M. G. Lagally, Surface Sci. 248, 313 (1991).

"Scanning Tunneling Microscopy Study of the Growth Process of Ge on Si(001)", Y. W. Mo, and M. G. Lagally, J. Cryst. Growth 111, 876 (1991).

"Calculation of Terrace Edge Structure Distributions for Vicinal Surfaces", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, Surface Sci. 248, 295 (1991).

"Diffraction Determination of the Structure of Metastable 3D Clusters of Ge on Si(001)", C. E. Aumann, Y. W. Mo, and M. G. Lagally, Appl. Phys. Letters 59, 1061 (1991).

"Measurement of Gas Kinetic Temperature in a CH4-H2 Discharge During the Growth of Diamond", H. N. Chu, E. A. den Hartog, A. R. Lefkow, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, Phys. Rev. A44, 3796 (1991).

"Evolution of Vicinal Si(001) from Double to Single-Atomic-Height Steps with Temperature", J. J. de Miguel, C. E. Aumann, R. Kariotis, and M. G. Lagally, Phys. Rev. Letters 67, 2830 (1991).

"Observations of Strain Effects on the Si(001) Surface Using Scanning Tunneling Microscopy", B. S. Swartzentruber, Y. W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A8, 210 (1990).

"Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)", Y. W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A8, 201 (1990).

"The Effect of External Stress on Si Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, and M. G. Lagally, J. Vac. Sci. Technol. A8, 2658 (1990).

"Kinetics of Strain Induced Domain Formation at Surfaces", M. B. Webb, F. K. Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, in Kinetics of Ordering and Growth at Surfaces, ed. M. G. Lagally, Plenum, New York, NY (1990).

"Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy Study of Si on Si(001)", M. G. Lagally, Y. W. Mo, R. Kariotis, B. S. Swartzentruber, and M. B. Webb, in Kinetics of Ordering and Growth at Surfaces, ed. M. G. Lagally, Plenum, New York, NY (1990).

"Model Diffraction Profiles Parallel to Rough Step Edges", R. Kariotis, B. S. Swartzentruber, and M. G. Lagally, J. Appl. Phys. 67, 2848 (1990).

"Growth of Si on Flat and Vicinal Si(001) Surfaces: A Scanning Tunneling Microscopy Study", Y. W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. B8, 232 (1990).

"Direct Determination of Step and Kink Energies on Vicinal Si(001)", B. S. Swartzentruber, Y. W. Mo, R. Kariotis, M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 65, 1913 (1990).

"The Measurement of Gas Kinetic Temperature in a CH4-H2 Discharge", H. N. Chu, T. R. Lefkow, E. A. den Hartog, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, New Diamond Science and Techno , 233 (1990).

"Characterization of Hollow Cathode DC Discharge Growth of Diamond: Rotational Vibronic Emission in a CH4-H2 Discharge", H. N. Chu, A. R. Lefkow, E. A. den Hartog, J. Jacobs, L. W. Anderson, M. G. Lagally, and J. E. Lawler, MRS Proceedings 162, 163 (1990).

"Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y. W. Mo, and M. G. Lagally, Modern Physics Letters B4, 1379 (1990).

"RHEED Study of the Kinetics of the (2x1)-to-(7x7) Transformation in Cleaved Si(111)", B. Garni, D. E. Savage, and M. G. Lagally, Surface Sci. 235, 0 (1990).

"Maximum-Entropy Calculation of the Island Size Distribution for a Simple Diffraction Profile", R. Kariotis, and M. G. Lagally, J. Appl. Phys. 68, 21 (1990).

"Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)", Y. W. Mo, D. E. Savage, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Letters 65, 1020 (1990).

"Determination of the Size Distribution of Noncrystalline Regions on Crystalline Substrates", D. W. Kruger, D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 63, 402 (1989).

"Measurement of Conversion Temperatures for Si(111) 2x1", D. Haneman, J. J. Rownd, and M. G. Lagally, Surface Sci. 224, 0 (1989).

"Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)", Y. W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Letters 63, 2393 (1989).

"Rate Equation Modeling of Interface Width", R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. A7, 2180 (1989).

"Ordering Kinetics of a Chemisorbed Overlayer: 0/W(110)", P. K. Wu, M. C. Tringides, and M. G. Lagally, Phys. Rev. B39, 7595 (1989).

"Application of Rate Equation Modeling to Molecular Beam Epitaxy", R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. B7, 269 (1989).

"Influence of Beam Coherence on Measurements of Roughness in Film Growth", R. Kariotis, and M. G. Lagally, Appl. Phys. Letters 55, 960 (1989).

"Diffusive Disordering Kinetics in One Dimension", M. C. Tringides, J. Luscombe, and M. G. Lagally, Phys. Rev. B39, 9377 (1989).

"Rate Equation Modeling of Epitaxial Growth", R. Kariotis, and M. G. Lagally, Surface Sci. 216, 557 (1989).

"Anisotropic Growth and Layer-by-Layer Epitaxy", M. G. Lagally, R. Kariotis, D. E. Savage, and Y. W. Mo, Surface Sci. 219, 0 (1989).

"Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Si Surfaces", B. S. Swartzentruber, Y. W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Technol. A7, 2901 (1989).

"A Simple Monochromator Based on X-ray Multilayer Mirrors", A. Smith, C. Riedel, B. Edwards, D. E. Savage, B. Lai, A. Ray Chauduri, F. Cerrina, M. G. Lagally, J. H. Underwood, and C. M. Falco, Rev. Sci. Instrum. 60, 2003 (1989).

"Ordering Kinetics at Surfaces", M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y. W. Mo, Ultramicroscopy 31, 87 (1989).

"An New Cleavage Model for the Si(111)(2x1) Surface", D. Haneman, and M. G. Lagally, in Proceedings of the Solvay Conference on Surface Science, ed. F. W. deWette, Springer, New York (1988).

"Diffraction from Disordered Surfaces: An Overview", M. G. Lagally, D. E. Savage, and M. C. Tringides, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, ed. P. K. Larsen, Plenum, New York (1988).

"Studies of Growth Kinetics on Surfaces with Diffraction", M. C. Tringides, and M. G. Lagally, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, ed. P. K. Larsen, Plenum, New York (1988).

"Comparison of Equilibrium and Non-Equilibrium Diffusion Measurements for W(110)p(2x1)-0", M. C. Tringides, P. K. Wu, and M. G. Lagally, in Diffusion at Interfaces: Microscopic Concepts, ed. M. Grunze, Springer, New York (1988).

"Monolithic Fabry-Perot Structure for Soft X-rays", R. Fernandez, C. Riedel, A. Smith, B. Edwards, B. Lai, F. Cerrina, M. G. Lagally, M. J. Carr, A. D. Romig Jr., J. Corno, L. Nevot, B. Pardo, J. M. Slaughter, and C. M. Falco, in SPIE Proceedings, vol. 984, X-ray Multilayers for Diffractometers, Monochromators, and Spectrometers, ed. . , (1988), pg. 256.

"Measurement of Non-Equilibrium Diffusion from Two-Dimensional Ordering Kinetics", M. G. Lagally, and M. C. Tringides, in Proceedings of the Solvay Conference on Surface Science, ed. F. W. de Wette, Springer, New York (1988).

"Direct Determination of the Size Distribution of Arbitrary Surface Configurations from Diffraction Measurements. I. Theory", R. Kariotis, D. W. Kruger, D. E. Savage, and M. G. Lagally, Surface Sci. 205, 591 (1988).

"The Use of Peak Intensity in Diffraction Measurements of Growth Kinetics on Surfaces", M. C. Tringides, and M. G. Lagally, Surface Sci. 195, 0 (1988).

"Quantitative RHEED Measurements of Surface Roughness on GaAs(100)", E. J. Heller, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. A6, 1484 (1988).

"Step Structure and Dimer Row Correlations in Vicinal Si(100)", C. E. Aumann, D. E. Savage, R. Kariotis, and M. G. Lagally, J. Vac. Sci. Technol. A6, 1963 (1988).

"A Beam Line for Layered Synthetic Microstructure Studies", J. Boudry, C. Riedel, B. Edwards, M. G. Lagally, R. Redaelli, F. Cerrina, C. Falco, R. Fernandez, J. H. Underwood, and M. Hettrick, Nuclear Instrum. and Methods A266, 351 (1988).

"Three-Bond Scission and Structure of the Cleaved Si(111) Surface", D. Haneman, and M. G. Lagally, J. Vac. Sci. Technol. B 6, 1451 (1988).

"Direct Determination of the Size Distribution of Uncorrelated Overlayer Islands from Diffraction Profiles", R. Kariotis, D. E. Savage, and M. G. Lagally, Surface Sci. 204, 491 (1988).

"Kinetics of Titanium Silicide Formation on Single-Crystal Si: Experiment and Modeling", C. A. Pico, and M. G. Lagally, J. Appl. Phys. 64, 4957 (1988).

"Quantitative Studies of Growth of Metals on GaAs(110) Using RHEED", D. E. Savage, and M. G. Lagally, in Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces, ed. P. K. Larsen, Plenum, New York (1988).

"Scaling in the Growth Kinetics of a Chemisorbed Overlayer: W(110)p(2x1)-0", M. C. Tringides, P. K. Wu, and M. G. Lagally, Phys. Rev. Letters 59, 315 (1987).

"Atomic Steps on Si(100) Surfaces", J. A. Martin, C. E. Aumann, D. E. Savage, M. C. Tringides, M. G. Lagally, W. Moritz, and F. Kretschmar, J. Vac. Sci. Technol. A5, 615 (1987).

"Direct Observation of Amorphous-to-Crystalline Transition in the Growth of Sb on GaAs(110) by RHEED", D. E. Savage, and M. G. Lagally, Appl. Phys. Letters 50, 1719 (1987).

"Determination of Terrace Size and Edge Roughness in Vicinal Si(100) Surfaces by Surface Sensitive Diffraction", D. Saloner, J. A. Martin, M. C. Tringides, D. E. Savage, C. E. Aumann, and M. G. Lagally, J. Appl. Phys. 61, 2884 (1987).

"Compositional and Morphological Analysis of Silver Chloride Films Deposited by Evaporation and RF Sputtering", A. Belkind, M. Dror, E. Ezell, W. A. Luo, J. R. Jacobs, and M. G. Lagally, Thin Solid Films 162, 113 (1986).

"RHEED Study of the Growth of In on GaAs(110) at Different Temperatures", D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. B4, 943 (1986).

"Influence of Process Parameter Variation on the Reflectivity of Sputter-Deposited W-C Multilayer Diffraction Gratings", B. Sager, P. Benson, K. Jahoda, J. R. Jacobs, J. J. Bloch, W. J. Sanders, and M. G. Lagally, J. Vac. Sci. Technol. A4, 647 (1986).

"Structure, Stability, and Origin of (2xn) Phases on Si(100)", J. A. Martin, D. E. Savage, W. Moritz, and M. G. Lagally, Phys. Rev. Letters 56, 1936 (1986).

"Ordering Kinetics for O on W(110)", M. Tringides, P. K. Wu, W. Moritz, and M. G. Lagally, Ber. Bunsenges. Phys. Chem. 90, 277 (1986).

"Reliability of Low-Energy Electron Diffraction for Studies of Critical Phenomena at Surfaces", W. Moritz, and M. G. Lagally, Phys. Rev. Letters 56, 865 (1986).

"Domain-Size Determination in Heteroepitaxial Systems from LEED Angular Profiles", D. Saloner, and M. G. Lagally, in The Structure of Surfaces - I, ed. M. Van Hove, Springer Series in Chemical Physics, Springer, Berlin (1985).

"Diffraction Techniques", M. G. Lagally, in Methods of Experimental Physics: Surfaces, ed. R. L. Park, Academic, Orlando, FL (1985).

"The Role of Instrumental Broadening in Surface Structure Determination by LEED", T. M. Lu, and M. G. Lagally, in Surface Structure by LEED, ed. P. M. Marcus, Plenum, New York (1985).

"Resistivity and Growth of TiSi2 Films for Different Process Parameters", C. E. Aumann, J. R. Jacobs, M. S. Phipps, C. A. Pico, N. C. Tran, and M. G. Lagally, in Proceedings of the Second IEEE VLSI Multilevel Interconnection Conference, ed. T. E. Wade, IEEE, New York (1985).

"A High-Resolution Surface-Sensitive Scanning Electron Diffractometer Based on a Field Emission Source", J. A. Martin, and M. G. Lagally, in Scanning Electron Microscopy/1985/vol IV., ed. O. Johari, (1985), pg. 1357.

"Species-Specific Densities of States of Ga and As in the Chemisorption of CO and C on GaAs(110)", K. D. Childs, and M. G. Lagally, J. Vac. Sci. Technol. A3, 1024 (1985).

"Crystallography of In on GaAs(110): Possible Relationship of Laterally Inhomogeneous Structure to Fermi Level Pinning", D. E. Savage, and M. G. Lagally, Phys. Rev. Letters 55, 959 (1985).

"Analysis of Domain-Size Distributions in Epitaxial Growth Using LEED Angular Profiles", D. Saloner, and M. G. Lagally, Mat. Res. Soc. Symp. Proc. 41, 179 (1985).

"Two-Dimensional Overlayer Growth: Island Size and Island Separation Distributions", D. Saloner, P. K. Wu, and M. G. Lagally, J. Vac. Sci. Technol. A3, 1531 (1985).

"Resistivity-Process Relationships in TiSi2 Formed from Ti-Si Reaction Couples", J. Jacobs, C. Pico, M. Phipps, N. C. Tran, and M. G. Lagally, J. Vac. Sci. Technol. A3, 723 (1985).

"Initial Ordering Kinetics of a Randomly Stepped GaAs(110) Surface", H. M. Clearfield, and M. G. Lagally, J. Vac. Sci. Technol. A2, 844 (1984).

"Species-Specific Densities of States of Ga and As in the Chemisorption of Oxygen on GaAs(110)", K. D. Childs, and M. G. Lagally, Phys. Rev. B30, 5742 (1984).

"Kinetics of TiSi2 Thin-Film Formation from Ti-Si Reaction Couples", M. Phipps, J. R. Jacobs, C. A. Pico, M. Tang, and M. G. Lagally, in Proceedings of the First International IEEE VLSI Multilevel Interconnection Conference, ed. T. E. Wade, IEEE, New York, NY (1984).

"A Method for the Calculation of LEED Angular Profiles to Estimate Overlayer Spacings and Island Size Distributions", D. Saloner, and M. G. Lagally, J. Vac. Sci. Technol. A2, 935 (1984).

"Species-Specific Densities of States of Ga and As in the Chemisorption of H20 on GaAs(110),", W. A. Luo, and M. G. Lagally, J. Vac. Sci. Technol. A2, 593 (1984).

"Phase Relationships for Adsorbed Layers on Surfaces", T. M. Lu, and M. G. Lagally, in Alloy Phase Diagrams, Proceedings of the Materials Research Society Meeting, Boston 1982, ed. L. H. Bennett, Elsevier (1983).(invited)

"Dynamics of Two-Dimensional Ordering of An Overlayer with Four-Fold Degenerate Ground State: W(110)p(2x1)-0", P. K. Wu, J. H. Perepezko, J. T. McKinney, and M. G. Lagally, Phys. Rev. Letters 51, 1577 (1983).

"Instrumentation for Low-Energy Electron Diffraction", M. G. Lagally, and J. A. Martin, Rev. Sci. Instrum. 54, 1273 (1983).

"Analysis of Surface Structural Defects Using LEED and RHEED", M. G. Lagally, Ultramicroscopy 11, 103 (1983).

"A High-Resolution Low-Energy Electron Diffractometer Based on a Field Emission Source", J. A. Martin, and M. G. Lagally, J. Vac. Sci. Technol. A1, 1210 (1983).

"Structural Defects in Surfaces and Overlayers", M. G. Lagally, in Springer Series in Chem. Physics, Vol. 20, ed. R. Vanselow, Springer Heidelberg (1982).(invited)

"Surface Analysis Techniques", M. G. Lagally, in Advanced Techniques for Characterizing Microstructures, ed. F. W. Wiffen, TMS-AIME, Warrendale, PA (1982).(invited)

"Studies of Extended Defects on Surfaces by Low-Energy Electron Diffraction", M. G. Lagally, and D. G. Welkie, in Advanced Techniques for Characterizing Microstructures, ed. F. W. Wiffen, TMS-AIME, Warrendale, PA (1982).

"Analysis of Surface Structural Defects by Low-Energy Electron Diffraction", D. G. Welkie, and M. G. Lagally, Thin Solid Films 93, 219 (1982).

"Diffraction from Overlayer Islands with Positional Correlation", T. M. Lu, L. H. Zhao, M. G. Lagally, G. C. Wang, and J. E. Houston, Surface Sci. 122, 519 (1982).

"An Alternative Approach to the Quantitative Determination of Grain Size Distribution in X-Ray Diffraction", L. H. Zhao, T. M. Lu, and M. G. Lagally, Acta Cryst. A38, 800 (1982).

"Direct Determination of the Island Size Distribution for Parallelogram-Shaped Islands", L. H. Zhao, T. M. Lu, and M. G. Lagally, Appl. Surface Sci. 11/12, 634 (1982).

"The Present Status of Low-Energy Electron Diffraction", M. G. Lagally, Appl. Surface Sci. 13, 260 (1982).

"Diffraction from Surfaces with Randomly Distributed Steps", T. M. Lu, and M. G. Lagally, Surface Sci. 120, 47 (1982).

"Thermodynamics of Overlayer Ordering and Epitaxy", M. G. Lagally, J. Vac. Sci. Technol. 20, 554 (1982).

"Site-Specific Densities of States for Cleaved and Sputtered GaAs(110) from Auger Line Shapes", G. D. Davis, D. E. Savage, and M. G. Lagally, J. Vac. Sci. Technol. 18, 904 (1981).

"Defect Structures at Solid Surfaces", M. G. Lagally, and D. G. Welkie, Surface and Interface Analysis 3, 8 (1981).

"A Simple Technique for Measuring Electron Beam Angular Divergence", J. A. Martin, and M. G. Lagally, J. Vac. Sci. Technol. 18, 58 (1981).

"The Effect of Instrumental Broadening on LEED Intensity-Energy Profiles", T. M. Lu, M. G. Lagally, and G. C. Wang, Surface Sci. 104, 0 (1981).

"Electron Spectroscopy Analysis of Contact Surfaces in the Wear of Carbon Brushes Against Copper Commutators", D. E. Savage, M. G. Lagally, and M. E. Schrader, Appl. Surface Sci. 7, 142 (1981).

"LEED Beam Shapes and Fluctuation Phenomena Near an Order-Disorder Transition", T. M. Lu, L. H. Zhao, and M. G. Lagally, J. Vac. Sci. Technol. 18, 504 (1981).

"Comparison of Site-Specific Densities of States of Ga and As in Cleaved and Sputtered GaAs(110) by Means of Auger Line Shapes", G. D. Davis, D. E. Savage, and M. G. Lagally, J. Electron Spectroscopy and R 23, 25 (1981).

"Correction for Loss Effects in Valence-Band XPS Spectra by Deconvolution", G. D. Davis, and M. G. Lagally, J. Vac. Sci. Technol. 18, 727 (1981).

"LEED Study of the Surface Defect Structure of Ge Grown Epitaxially on GaAs(110)", H. M. Clearfield, D. G. Welkie, and M. G. Lagally, J. Vac. Sci. Technol. 18, 802 (1981).

"Quantitative Island Size Determination in the Chemisorbed Overlayer W(110)p(2x1)-0 II: Theoretical Calculations", T. M. Lu, G. C. Wang, and M. G. Lagally, Surface Sci. 107, 494 (1981).

"LEED Investigation of Extended Defects at the Surface of Ge Films Grown Epitaxially on GaAs(110), H. M. Clearfield, D. G. Welkie, T.M. Lu, and M. G. Lagally, J. Vac. Sci. Technol. 19, 323 (1981). 56,", P. E. Viljoen, G. D. Davis, and M. G. Lagally, S. Afr. J. Phys. 4, 44 (1981).

"Comparison of Site-Specific Densities of States Determined from Auger Spectra and XPS-Determined Valence Band Spectra in GeS(001) and GeSe(001)", G. D. Davis, P. E. Viljoen, and M. G. Lagally, J. Electron Spectroscopy and R 21, 135 (1980).

"Surface Defects and Thermodynamics of Chemisorbed Layers", M. G. Lagally, T. M. Lu, and D. G. Welkie, J. Vac. Sci. Techn. 17, 223 (1980).

"LEED Study of the Surface Defect Structure of Ag (111) Epitaxially Grown on Mica", D. G. Welkie, M. G. Lagally, and R. L. Palmer, J. Vac. Sci. Techn. 17, 453 (1980).

"Island Formation and Condensation of a Chemisorbed Overlayer", T. M. Lu, G. C. Wang, and M. G. Lagally, Surface Sci. 92, 133 (1980).

"Observations of Island Formation and Dissolution in Oxygen on W(110) by Low-Energy Electron Diffraction", M. G. Lagally, T. M. Lu, and G. C. Wang, in Ordering in Two Dimensions, ed. S. Sinha, Elsevier (1980).(invited)

"The Resolving Power of a LEED Instrument and the Analysis of Surface Defects", T. M. Lu, and M. G. Lagally, Surface Sci. 98, 695 (1980).

"Analysis of the Composition of a Discolored Aluminum Film Vapor-Deposited onto Plastic", M. G. Lagally, S. R. Anderson, N. C. Tran, T. Hoang, and K. Gilleo, Thin Solid Films 72, 151 (1980).

"Quantitative Analysis of Step Densities Using a Two-Dimensional Random Probability Model", T. M. Lu, S. R. Anderson, M. G. Lagally, and G. C. Wang, J. Vac. Sci. Technol. 17, 207 (1980).

"Determination of Shallow Core Level Line Shapes in Selected Compound Semiconductors", G. D. Davis, P. E. Viljoen, and M. G. Lagally, J. Electron Spectroscopy and R 20, 305 (1980).

"Quantitative Island Size Determination in the Chemisorbed Overlayer O/W (110). I: Instrument Response Function and Substrate Perfection", G. C. Wang, and M. G. Lagally, Surface Science 81, 69 (1979).

"Investigation of the Instrument Response of a Vidicon-Based LEED System", D. G. Welkie, and M. G. Lagally, Applications of Surface Sci. 3, 272 (1979).

"Chemisorption: Island Formation and Adatom Interactions", M. G. Lagally, G. C. Wang, and T. M. Lu, in Chemistry and Physics of Solid Surfaces, Vol. II, ed. R. Vanselow, CRC Press, Boca Raton, FL (1979).(invited)

"Correlation of Short-Range Order with Sputter Dose in GaAs (110) Using a Vidicon-Based LEED System", D. G. Welkie, and M. G. Lagally, J. Vac. Sci. Technol. 16, 784 (1979).

"Calculated and Measured Auger Lineshapes in SiO2", D. E. Ramaker, J. S. Murday, N. H. Turner, G. Moore, M. G. Lagally, and J. E. Houston, Phys. Rev. B19, 5375 (1979).

"Calculated and Measured Auger Lineshapes in SiO2", D. E. Ramaker, J. S. Murday, N. H. Turner, G. Moore, M. G. Lagally, and J. E. Houston, in roceedings of the International Conference on the Physics of SiO2 and Its Interfaces, ed. . , Plenum, NY (1978).

"Order-Disorder Transformations in Chemisorbed Layers: O on W(110)", W. Y. Ching, D. L. Huber, M. G. Lagally, and G. C. Wang, Surface Science 77, 550 (1978).

"Braze Alloy Spreading on Steel", T. A. Siewert, R. W. Heine, and M. G. Lagally, Welding Journal 57, 31 (1978).

"Auger Line Shapes for Ga and As CCV Transitions in GaAs (110)", G. D. Davis, and M. G. Lagally, J. Vac. Sci. Techn. 15, 1311 (1978).

"Chemisorption: Island Formation and Adatom Interactions", M. G. Lagally, G. C. Wang, and T. M. Lu, CRC Critical Reviews in Solid 7, 233 (1978).

"Phase Transitions in the Chemisorbed Layer W(110)p(2x1)-0, I. Experimental", G. C. Wang, T. M. Lu, and M. G. Lagally, J. Chem. Phys. 69, 479 (1978).

"Monte-Carlo Modeling of Phase Changes in the Chemisorption System O/W (110)", W. Y. Ching, D. L. Huber, M. Fishkis, and M. G. Lagally, J. Vac. Sci. Technol. 15, 653 (1978).

"Electromechanical Devices Utilizing Thin Si Diaphragms", H. Guckel, S. Larsen, M. G. Lagally, G. Moore, J. B. Miller, and J. D. Wiley, Appl. Phys. Letters 31, 618 (1977).

"Transition Density of States for Si(100) from L1L23V and L23VV Auger Spectra", J. E. Houston, G. Moore, and M. G. Lagally, Solid State Communications 21, 879 (1977).

"Auger Investigations of Boron-Doped SiO2/Si", G. Moore, H. Guckel, and M. G. Lagally, J. Vac. Sci. Technol. 14, 70 (1977).

"On the Adequacy of the Draw-Sealing of Gas-Filled Glass Ampoules", A. P. MacKenzie, D. G. Welkie, M. G. Lagally, M. Pace, and F. I. Elliott, Develop. Biol. Standard 36, 151 (1977).

"Island-Dissolution Phase Transition in a Chemisorbed Layer", T. M. Lu, G. C. Wang, and M. G. Lagally, Phys. Rev. Letters 39, 411 (1977).

"Surface Vibrations", M. G. Lagally, in Surface Physics of Materials, ed. J. M. Blakely, Academic Press (1975).(invited)

"Order-Disorder Transition and Adatom-Adatom Interactions in a Chemisorbed Overlayer: Oxygen on W(110)", J. C. Buchholz, and M. G. Lagally, Phys. Rev. Letters 35, 442 (1975).

"Surface Crystallography of W(110) and W(110)p(2x1)-0: The Position of W Atoms", J. C. Buchholz, G. C. Wang, and M. G. Lagally, Surface Sci. 49, 508 (1975).

"LEED Intensity-Averaging Experiments for Surface-Layer Structure Determination", M. G. Lagally, J. C. Buchholz, and G. C. Wang, J. Vac. Sci. Technol. 12, 213 (1975).

"Fourier Inversion of LEED Data", J. C. Buchholz, M. G. Lagally, and M. B. Webb, Surface Sci. 41, 248 (1974).

"A Method to Obtain Kinematic Intensities from Low-Energy Electron Diffraction Data", T. C. Ngoc, M. G. Lagally, and M. B. Webb, Surface Sci. 35, 117 (1973).

"Elastic Scattering of Low-Energy Electrons from Surfaces", M. B. Webb, and M. G. Lagally, Solid State Physics 28, 301 (1973).

"Averaged Low-Energy Electron Diffraction Intensities from Ni(111)", M. G. Lagally, T. C. Ngoc, and M. B. Webb, J. Vac. Sci. and Technol. 9, 645 (1972).

"Surface Crystallography Using Low-Energy Electron Diffraction", M. G. Lagally, and M. B. Webb, in LEED: Surface Structures of Solids, ed. M. Laznicka, JCMF Prague (1972).

"Thermal Diffuse Scattering in Low-Energy Electron Diffraction", M. G. Lagally, in LEED: Surface Structures of Solids, ed. M. Laznicka, JCMF Prague (1972).(invited)

"Consequences of the Reciprocity Theorem in Low-Energy Electron Diffraction", M. G. Lagally, T. C. Ngoc, and M. B. Webb, Surface Sci. 25, 444 (1971).

"Kinematic Low-Energy Electron Diffraction Intensities from Averaged Data: A Method for Surface Crystallography", M. G. Lagally, T. C. Ngoc, and M. B. Webb, Phys. Rev. Letters 26, 1557 (1971).

"Low-Energy Electron Diffraction from Ag(111): Intensity-versus-Energy Curves and Absolute Intensity of the (00) Beam", M. G. Lagally, Z. Naturforsch. 25a, 1567 (1970).

"Theoretische und Experimentelle Untersuchung der Intensitaten bei der Beugung Langsamer Elektronen", K. Kambe, M. G. Lagally, and K. Moliere, in Structure et Proprietes des Surfaces des Solides, ed. M. J. Bernard, Centre National de la Recherche Scientifique, Paris (1970).

"Effects of Phonon Scattering and the Atomic Scattering Factor in Low-Energy Electron Diffraction", M. G. Lagally, and M. B. Webb, in The Structure and Chemistry of Solid Surfaces, ed. G. A. Somorjai, Wiley, New York (1969).

"Experimental Determination of the Effective Atomic Scattering Factor and Rigid-Lattice Interference Function in Low-Energy Electron Diffraction", M. G. Lagally, and M. B. Webb, Phys. Rev. Letters 21, 1388 (1968).

"Multiphonon Scattering of Low-Energy Electrons", R. F. Barnes, M. G. Lagally, and M. B. Webb, Phys. Rev. 171, 627 (1968).